3 resultados para Justification.
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
The formation of shear bands in plane sheet is studied, both analytically and experimentally, to enhance the fundamental understanding of this phenomenon and to develop a capability for predicting material failure. The evolution of voids is measured and its interaction with the process of shear banding is examined. The evolving dilatancy in plasticity is shown to have a vital role in analysing the shear-band type of bifurcation, and tremendously reduces the theoretical value of critical stresses. The analyses, referring to both localized and diffuse modes of bifurcation, fairly explain the corresponding observations obtained through testing a dual-phase steer sheet and provide a justification of the constitutive model used.
Resumo:
Dilatational plastic equations, which can include the effects of ductile damage, are derived based on the equivalency in expressions for dissipated plastic work. Void damage developed internally at the large-strain stage is represented by an effective continuum being strain-softened and plastically dilated. Accumulation of this local damage leads to progressive failure in materials. With regard to this microstructural background, the constitutive parameters included for characterizing material behaviour have the sense of internal variables. They are not able to be determined explicitly by macroscopic testing but rather through computer simulation of experimental curves and data. Application of this constitutive model to mode-I cracking examples demonstrates that a huge strain concentration accompanied by a substantial drop of stress does occur near the crack tip. Eventually, crack propagation is simulated by using finite elements in computations. Two numerical examples show good accordance with experimental data. The whole procedure of study serves as a justification of the constitutive formulation proposed in the text.
Resumo:
A scattering matrix method for investigating the electron transport in quantum waveguides is presented. By dividing the structure into a number of transverse slices, the global scattering matrix is obtained by the composition of the individual scattering matrices associated with each interface. Complicated geometries and inhomogeneous external potentials are included in the formulation. It is shown that the proposed scattering matrix method possesses many advantages over the traditional mode-matching and transfer matrix methods, especially in treating the electron wave propagation in complicated geometries. Justification for the method is provided by the unitarity of the calculated scattering matrix, and the consistency of the results with those obtained by the recursive Green's function method.