Bibliometric analysis of nicotine research in China during the period of 1991 to 2007

With the widespread exposure of people to nicotine through recreational use of tobacco products, research into nicotine has attracted increasing attention. Tobacco smoking is by far the most important cause of lung cancer. As the world's largest producer and consumer of tobacco products, China bears a large proportion of the global burden of smoking-related disease; therefore, information on nicotine publications should be collected to formulate future research policy. In the present study, we investigated nicotine-related research articles published by Chinese authors that were indexed in the Science Citation Index (SCI) from 1991 to 2007. An indicator "citations per publication" (CPP) was used in the study to evaluate the impact of journals, articles, and institutes. The quantity of publications has increased at a quicker pace than the worldwide trend. Article visibility, measured as the frequency of being cited, also increased during the period. However, the overall quality of articles, based on the impact factor of journals publishing those articles, dropped behind the worldwide average level. There has been an increase in international collaboration, mainly with researchers in the USA. The average CPP of international co-authorship articles was higher than that of single country publications. Besides the USA, nicotine research in China will benefit from more collaboration with Taiwan, England, and Germany. Some 110 of 264 articles were published by a single institute, and the top six institutes were compared from various angles. Seventy-two subject categories were covered, and trends (in terms of both quantity and quality) of nicotine research in China were compared with worldwide trends. In addition, analysis of keywords in both nicotine and lung cancer research fields was applied to indicate research interests. Mutual cooperation among multiple disciplines needs further strengthening.

Torsional impact response of a penny-shaped interface crack in bonded materials with a graded material interlayer

In this paper, the dynamic response of a penny-shaped interface crack in bonded dissimilar homogeneous half-spaces is studied. It is assumed that the two materials are bonded together with such a inhomogeneous interlayer that makes the elastic modulus in the direction perpendicular to the crack surface is continuous throughout the space. The crack surfaces art assumed to be subjected to torsional impact loading. Laplace and Hankel integral transforms are applied combining with a dislocation density,function to reduce the mixed boundary value problem into a singular integral equation with a generalized Cauchy kernel in Laplace domain. By solving the singular integral equation numerically, and using a numerical Laplace inversion technique, the dynamic stress intensity factors art obtained. The influences of material properties and interlayer thickness on the dynamic stress intensity factor are investigated.

Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using tirisilane

We explored the deposition of hydrogenated amorphous silicon (a-Si: H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of similar to 1.5 for the same hydrogen dilution (R = [H-2]/[Si3H8] or [H-2]/[Si2H6])- Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si: H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (V-oc) on hydrogen dilution was investigated. V-oc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.