Quantum tunneling through planar p-n junctions in HgTe quantum wells

We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (Q1D) p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI.

Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions

We reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of CoFeB/GaAs/(Ga,Mn)As (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 K. Tunneling magnetoresistance (TMR) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 K, respectively, were observed. Bias dependence of both the junction resistance and TMR ratio was studied systematically. V-half at which TMR drops to half of its maximum is 6.3 mV, being much smaller compared to that observed in (Ga,Mn)As/ZnSe/Fe and (Ga,Mn)As/AlAs/MnAs hybrid structures, indicating lower Fermi energy of (Ga,Mn)As.

Photovoltaic effects in InGaN structures with p-n junctions

InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions

We present the design and numerical simulation results for a silicon waveguide modulator based on carrier depletion in a linear array of periodically interleaved PN junctions that are oriented perpendicular to the light propagation direction. In this geometry the overlap of the optical waveguide mode with the depletion region is much larger than in designs using a single PN junction aligned parallel to the waveguide propagation direction. Simulations predict that an optimized modulator will have a high modulation efficiency of 0.56 V.cm for a 3V bias, with a 3 dB frequency bandwidth of over 40 GHz. This device has a length of 1.86 mm with a maximum intrinsic loss of 4.3 dB at 0V bias, due to free carrier absorption. (C) 2009 Optical Society of America

Frequency mixing and phase detection functionalities of three-terminal ballistic junctions

Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In0.75Ga0.25As heterostructure by electron-beam lithography. The voltage output from the central branch is measured as a function of the voltages applied to the left and right branches of the TBJs. The measurements show that the TBJs possess an intrinsic nonlinearity. Based on this nonlinearity, a novel room-temperature functional frequency mixer and phase detector are realized. The TBJ frequency mixer and phase detector are expected to have advantages over traditional circuits in terms of simple structure, small size and high speed, and can be used as a new type of building block in nanoelectronics.

New annealing processes and explanation for novel silicon pn junctions formed by proton implantation

Proton-implanted n-type Si wafers were annealed at 950 degrees C to achieve novel pn junctions. The novel pn junctions are explained by the combined use of four models. The background (e.g. oxygen impurity) of an Si wafer is suggested to play a key role in creating the novel pn junction.

A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

This paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.

All-organic tunnel junctions as connecting units in tandem organic solar cell

We employed organic heterojunction films as all-organic connecting units to fabricate tandem organic photovoltaic cells by continuous deposition. The all-organic connecting units with a better transparence and a lower sublimation temperature became an effective recombination center for electrons and holes photogenerated in front cell and back cell, respectively. Tunnel mechanism was proposed to explain the combination of photogenerated carrier.

Simple Electrochemical Route to Nanofiber Junctions and Dendrites of Conducting Polymer

We first report a simple and rapid electrochemical approach to synthesize novel nanofiber junctions and dendrites of conducting poly(o-phenylenediamine) without any surfactant or template. Through controlling some parameters such as the time and potential of electrodeposition and concentration of the reactant, nanofiber junctions and dendrites of conducting polymer can be easily obtained on the solid surface.

From Tunneling to Hopping: A Comprehensive Investigation of Charge Transport Mechanism in Molecular Junctions Based on Oligo(p-phenylene ethynylene)s

The charge transport mechanism of oligo(p-phenylene ethynylene)s with lengths ranging from 0.98 to 5.11 nm was investigated using modified scanning tunneling microscopy break junction and conducting probe atomic force microscopy methods. The methods were based on observing the length dependence of molecular resistance at single molecule level and the current-voltage characteristics in a wide length distribution. An intrinsic transition from tunneling to hopping charge transport mechanism was observed near 2.75 nm. A new transitional zone was observed in the long length molecular wires compared to short ones. This was not a simple transition between direct tunneling and field emission, which may provide new insights into transport mechanism investigations. Theoretical calculations provided an essential explanation for these phenomena in terms of molecular electronic structures.

In Situ Synthesis Of Nanocrystalline Intermetallic Layer During Surface Plastic Deformation Of Zirconium

By means of a surface plastic deformation method a nanocrystalline (NC) intermetallic compound was in situ synthesized on the surface layer of bulk zirconium (Zr). Hardened steel shots (composition: 1.0C, 1.5Cr, base Fe in wt.%) were used to conduct repetitive and multidirectional peening on the surface layer of Zr. The microstructure evolution of the surface layer was investigated by X-ray diffraction and scanning and transmission electron microscopy observations. The NC intermetallic layer of about 25 gm thick was observed and confirmed by concentration profiles of Zr, Fe and Cr, and was found to consist of the Fe100-xCrx compound with an average grain size of 22 nm. The NC surface layer exhibited an extremely high average hardness of 10.2 GPa. The Zr base immediately next to the compound/Zr interface has a grain size of similar to 250 nm, and a hardness of similar to 3.4 GPa. The Fe100-xCrx layer was found to securely adhere to the Zr base. (c) 2007 Elsevier B.V All rights reserved.

Oil-Water Two-Phase Flow Inside T-Junction

The oil/water two-phase flow inside T-junctions was numerically simulated with a 3-D two-fluid model, and the turbulence was described using the mixture k - epsilon model. Some experiments of oil/water flow inside a single T-junction were conducted in the laboratory. The results show that the separating performance of T-junction largely depends oil the inlet volumetric fraction and flow patterns. A reasonable agreement is reached between the numerical simulation and the experiments for both the oil fraction distribution and the separation efficiency.

Microstructural evolution and formation of nanocrystalline intermetallic compound during surface mechanical attrition treatment of cobalt

Nanocrystalline intermetallic Co3Fe7 was produced on the surface of cobalt via surface mechanical attrition (SMA). Deformationinduced diffusion entailed the formation of a series of solid solutions. Phase transitions occurred depending on the atomic fraction of Fe in the surface solid solutions: from hexagonal close-packed (<4% Fe) to face-centered cubic (fcc) (4-11% Fe), and from fcc to body-centered cubic (>11% Fe). Nanoscale compositional probing suggested significantly higher Fe contents at grain boundaries and triple junctions than grain interiors. Short-circuit diffusion along grain boundaries and triple junctions dominate in the nanocrystalline intermetallic compound. Stacking faults contribute significantly to diffusion. Diffusion enhancement due to high-rate deformation in SMA was analyzed by regarding dislocations as solute-pumping channels, and the creation of excess vacancies. Non-equilibrium, atomic level alloying can then be ascribed to deformation-induced intermixing of constituent species. The formation mechanism of nanocrystalline intermetallic grains on the SMA surface can be thought of as a consequence of numerous nucleation events and limited growth. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.