A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-mu m gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.

多相同步DC-DC PWM控制器LTC1629

LTC1629是Linear公司专门为低压大电流的DC-DC变换电路设计的PWM控制电路,应用该公司的PolyPhaseTM~(TM)技术,有效地减少了输入输出纹波电流,同时提高了变换器的效率。本文介绍它的基本组成部分的功能和简单应用电路。

三相电压型PWM整流器及其控制策略研究

本文分析了三相电压型PWM整流器在abc、DQ、dq坐标系下的数学模型，开发了基于MATLAB／SIMULINK的三相PWM整流器仿真模块，仿真结果表明基于dq同步旋转坐标系的整流器数学模型是正确的，并具有独特优点。对常用空间电压矢量控制策略进行分析，给出了合成电压矢量的不同方法；分析了固定开关频率的电流预测控制原理。分析了电流环的控制策略，推导出电流环和电压环PI参数与整流器主电路各参数之间的关系。设计了双闭环控制PWM整流器系统的硬件、软件，实现解藕整流器输入电流，并完成了系统仿真，仿真结果表明电压和电流双闭环P1参数选择的合理性以及整个系统的可行性。

模拟量采用PWM方式传送的应用

本文介绍了一种利用 ＰＷＭ方式进行模拟量长线传送的应用，突出了它的结构简单、抗干扰能力强的优点。