30 resultados para Interfacial thermal transport

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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An eigenfunction expansion-variational method based on a unit cell is developed to deal with the steady-state heat conduction problem of doubly-periodic fiber reinforced composites with interfacial thermal contact resistance or coating. The numerical results show a rapid convergence of the present method. The present solution provides a unified first-order approximation formula of the effective thermal conductivity for different interfacial characteristics and fiber distributions. A comparison with the present high-order results, available experimental data and micromechanical estimations demonstrates that the first-order approximation formula is a good engineering closed-form formula. An engineering equivalent parameter reflecting the overall influence of the thermal conductivities of the matrix and fibers and the interfacial characteristic on the effective thermal conductivity, is found. The equivalent parameter can greatly simplify the complicated relation of the effective thermal conductivity to the internal structure of a composite. (c) 2010 Elsevier Ltd. All rights reserved.

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A four-phase confocal elliptical cylinder model is proposed from which a generalised self-consistent method is developed for predicting the thermal conductivity of coated fibre reinforced composites. The method can account for the influence of the fibre section shape ratio on conductivity, and the physical reasonableness of the model is demonstrated by using the fibre distribution function. An exact solution is obtained for thermal conductivity by applying conformal mapping and Laurent series expansion techniques of the analytic function. The solution to the three-phase confocal elliptical model, which simulates composites with idealised fibre-matrix interfaces, is arrived at as the degenerated case. A comparison with other available micromechanics methods, Hashin and Shtrikman's bounds and experimental data shows that the present method provides convergent and reasonable results for a full range of variations in fibre section shapes and for a complete spectrum of the fibre volume fraction. Numerical results show the dependence of the effective conductivities of composites on the aspect ratio of coated fibres and demonstrate that a coating is effective in enhancing the thermal transport property of a composite. The present solutions are helpful to analysis and design of composites.

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gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

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We have investigated the effects of thermal annealing before and after cathode deposition on poly(3-hexylthiophene)(P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend photovoltaic cells with different cathode buffer layers. The introduction of cathode buffer layer such as lithium fluoride (LiF) and calcium oxide (CaO) in pre-annealing cells can increase the open-circuit voltage (V-oc) and the power conversion efficiency (PCE). Post thermal annealing after cathode deposition further enhanced the PCE of the cells with LiF/Al cathode.

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A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.

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Single crystal gallium nitride (GaN) is an important technological material used primarily for the manufacture of blue light lasers. An important area of contemporary research is developing a viable growth technique. The ammonothermal technique is an important candidate among many others with promise of commercially viable growth rates and material quality. The GaN growth rates are a complicated function of dissolution kinetics, transport by thermal convection and crystallization kinetics. A complete modeling effort for the growth would involve modeling each of these phenomena and also the coupling between these. As a first step, the crystallization and dissolution kinetics were idealized and the growth rates as determined purely by transport were investigated. The growth rates thus obtained were termed ‘transport determined growth rates’ and in principle are the maximum growth rates that can be obtained for a given configuration of the system. Using this concept, a parametric study was conducted primarily on the geometric and the thermal boundary conditions of the system to optimize the ‘transport determined growth rate’ and determine conditions when transport might be a bottleneck.

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The fracture toughness and interfacial adhesion properties of a coating on its substrate are considered to be crucial intrinsic parameters determining performance and reliability of coating-substrate system. In this work, the fracture toughness and interfacial shear strength of a hard and brittle Cr coating on a normal medium carbon steel substrate were investigated by means of a tensile test. The normal medium carbon steel substrate electroplated with a hard and brittle Cr coating was quasi-statically stretched to induce an array of parallel cracks in the coating. An optical microscope was used to observe the cracking of the coating and the interfacial decohesion between the coating and the substrate during the loading. It was found that the cracking of the coating initiated at critical strain, and then the number of the cracks of the coating per unit axial distance increased with the increase in the tensile strain. At another critical strain, the number of the cracks of the coating became saturated, i.e. the number of cracks per unit axial distance became a constant after this critical strain. Based on the experiment result, the fracture toughness of the brittle coating can be determined using a mechanical model. Interestingly, even when the whole specimen fractured completely under an extreme strain of the substrate, the interfacial decohesion or buckling of the coating on its substrate was completely absent. The test result is different from that appeared in the literature though the identical test method and the brittle coating/ductile metal substrate system are taken. It was found that this difference can be attributed to an important mechanism that the Cr coating on the steel substrate has a good adhesion, and the ultimate interfacial shear strength between the Cr coating and the steel substrate has exceeded the maximum shear flow strength level of the steel substrate. This result also indicates that the maximum shear flow strength level of the ductile steel substrate can be only taken as a lower bound estimate on the ultimate shear strength of the interface. This estimation of the ultimate interfacial shear strength is consistent with the theoretical analysis and prediction presented in the literature.

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An analytical model for size-dependent interface phonon transmission and thermal conductivity of nanolaminates is derived based on the improved acoustic mismatch theory and the Lindemann melting theory by considering the size effect of phonon velocity and the interface lattice mismatch effect. The model suggests that the interface phonon transmission is dominant for the cross-plane thermal conductivity of nanolaminates and superlattices, and the intrinsic variety of size effect of thermal conductivity for different systems is proposed based on the competition mechanism of size effect of phonon transport between two materials constituting the interfaces. The model's prediction for thermal conductivity of nanolaminates agrees with the experimental results. (C) 2008 American Institute of Physics.

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The thermally induced interfacial delamination problem of a segmented coating is investigated using finite element method (FEM). The coating-substrate system, modeled as a coated semi-infinite medium with periodic segmentation cracks within coating, is assumed to be exposed to convective cooling from surface. The failure criterion based on the interfacial fracture toughness is adopted, in which the energy release rate for an interface crack is considered to be the driving force for interfacial delamination extension. The results confirm that a segmented coating has higher delamination resistance than an intact one under the same thermal transients, as the segmentation crack spacing is smaller than a critical value. Based on dimensional analysis, sensitivity analyses of the crack driving force are also obtained as a function of various dimensionless parameters such as time, convection severity and material constants. These results may provide some helpful references for the integrity of coating-substrate systems under thermal loading. (C) 2007 Elsevier B.V. All rights reserved.

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Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production of single crystals for electronic applications. The Cz growth process involves multiple phases, moving interface and three-dimensional behavior. Much has been done to study these phenomena by means of numerical methods as well as experimental observations. A three-dimensional curvilinear finite volume based algorithm has been developed to model the Cz process. A body-fitted transformation based approach is adopted in conjunction with a multizone adaptive grid generation (MAGG) technique to accurately handle the three-dimensional problems of phase-change in irregular geometries with free and moving surfaces. The multizone adaptive model is used to perform a three-dimensional simulation of the Cz growth of silicon single crystals.Since the phase change interface are irregular in shape and they move in response to the solution, accurate treatment of these interfaces is important from numerical accuracy point of view. The multizone adaptive grid generation (MAGG) is the appropriate scheme for this purpose. Another challenge encountered is the moving and periodic boundary conditions, which is essential to the numerical solution of the governing equations. Special treatments are implemented to impose the periodic boundary condition in a particular direction and to determine the internal boundary position and shape varying with the combination of ambient physicochemical transport process and interfacial dynamics. As indicated above that the applications and processes characterized by multi-phase, moving interfaces and irregular shape render the associated physical phenomena three-dimensional and unsteady. Therefore a generalized 3D model rather than a 2D simulation, in which the governing equations are solved in a general non-orthogonal coordinate system, is constructed to describe and capture the features of the growth process. All this has been implemented and validated by using it to model the low pressure Cz growth of silicon. Accuracy of this scheme is demonstrated by agreement of simulation data with available experimental data. Using the quasi-steady state approximation, it is shown that the flow and temperature fields in the melt under certain operating conditions become asymmetric and unsteady even in the absence of extrinsic sources of asymmetry. Asymmetry in the flow and temperature fields, caused by high shear initiated phenomena, affects the interface shape in the azimuthal direction thus results in the thermal stress distribution in the vicinity, which has serious implications from crystal quality point of view.

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Onset and evolution of the Rayleigh-Benard (R-B) convection are investigated using the Information Preservation (IP) method. The information velocity and temperature are updated using the Octant Flux Splitting (OFS) model developed by Masters & Ye based on the Maxwell transport equation suggested by Sun & Boyd. Statistical noise inherent in particle approaches such as the direct simulation Monte Carlo (DSMC) method is effectively reduced by the IP method, and therefore the evolutions from an initial quiescent fluid to a final steady state are shown clearly. An interesting phenomenon is observed: when the Rayleigh number (Ra) exceeds its critical value, there exists an obvious incubation stage. During the incubation stage, the vortex structure clearly appears and evolves, whereas the Nusselt number (Nu) of the lower plate is close to unity. After the incubation stage, the vortex velocity and Nu rapidly increase, and the flow field quickly reaches a steady, convective state. A relation of Nu to Ra given by IP agrees with those given by DSMC, the classical theory and experimental data.

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In present study, effect of interfacial heat transfer with ambient gas on the onset of oscillatory convection in a liquid bridge of large Prandtl number on the ground is systematically investigated by the method of linear stability analyses. With both the constant and linear ambient air temperature distributions, the numerical results show that the interfacial heat transfer modifies the free-surface temperature distribution directly and then induces a steeper temperature gradient on the middle part of the free surface, which may destabilize the convection. On the other hand, the interfacial heat transfer restrains the temperature disturbances on the free surface, which may stabilize the convection. The two coupling effects result in a complex dependence of the stability property on the Biot number. Effects of melt free-surface deformation on the critical conditions of the oscillatory convection were also investigated. Moreover, to better understand the mechanism of the instabilities, rates of kinetic energy change and "thermal" energy change of the critical disturbances were investigated (C) 2009 Elsevier Ltd. All rights reserved.

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We present a theoretical model in which the band-transport equations and the coupled-wave equations are considered to study the two thermal-fixing methods (simultaneous fixing and postfixing) in Fe:LiNbO3. We found that, in simultaneous fixing, the existing ionic-grating affects the writing of the electronic grating by reduction of the coupling gain, and the grating envelope of the fixed-index grating is quite uniform inside the photorefractive crystal in comparison with the method of postfixing. The resulting diffraction efficiency of the fixed-volume grating is dependent mainly on the initial intensity modulation of the two writing beams. A set of experiments is also presented. (C) 1998 Optical Society of America.

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The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

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A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.