Fracture mechanics of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in an infinite piezoelectric or on the interface of piezoelectric bimaterials. For homogeneous materials it is found that the normal electric displacement D-2, induced by the crack, is constant along the crack faces which depends only on the remote applied stress fields. Within the crack slit, the perturbed electric fields induced by the crack are also constant and not affected by the applied electric displacement fields. For bimaterials, generally speaking, an interface crack exhibits oscillatory behavior and the normal electric displacement D-2 is a complex function along the crack faces. However, for bimaterials, having certain symmetry, in which an interface crack displays no oscillatory behavior, it is observed that the normal electric displacement D-2 is also constant along the crack faces and the electric field E-2 has the singularity ahead of the crack tip and has a jump across the interface. Energy release rates are established for homogeneous materials and bimaterials having certain symmetry. Both the crack front parallel to the poling axis and perpendicular to the poling axis are discussed. It is revealed that the energy release rates are always positive for stable materials and the applied electric displacements have no contribution to the energy release rates.

Effects of Nanostructures on the Fracture Strength of the Interfaces in Nacre

A strengthening mechanism arising from a type of inorganic nanostructure in the organic matrix layers is presented by studying the structural and mechanical properties of the interfaces in nacre. This nanostructural mechanism not only averagely increases the fracture strength of the organic matrix interfaces by about 5 times, but also effectively arrests the cracks in the organic matrix layers and causes the crack deflection in this biomaterial. The present investigation shows that the main mechanism governing the strength of the organic matrix interfaces relies on the inorganic nanostructures rather than the organic matrix. This study provides a guide to the interfacial design of synthetic materials.

Crack problems of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in piezoelectrics or on the interfaces of piezoelectric bimaterials. A class of boundary problems involving many cracks is also solved. For homogeneous materials it is found that the normal electric displacement D-2 induced by the crack is constant along the crack faces which depends only on the applied remote stress field. Within the crack slit, the electric fields induced by the crack are also constant and not affected by the applied electric field. For the bimaterials with real H, the normal electric displacement D-2 is constant along the crack faces and electric field E-2 has the singularity ahead of the crack tip and a jump across the interface.

Non-Slipping Jkr Model For Transversely Isotropic Materials

A generalized plane strain JKR model is established for non-slipping adhesive contact between an elastic transversely isotropic cylinder and a dissimilar elastic transversely isotropic half plane, in which a pulling force acts on the cylinder with the pulling direction at an angle inclined to the contact interface. Full-coupled solutions are obtained through the Griffith energy balance between elastic and surface energies. The analysis shows that, for a special case, i.e., the direction of pulling normal to the contact interface, the full-coupled solution can be approximated by a non-oscillatory one, in which the critical pull-off force, pull-off contact half-width and adhesion strength can be expressed explicitly. For the other cases, i.e., the direction of pulling inclined to the contact interface, tangential tractions have significant effects on the pull-off process, it should be described by an exact full-coupled solution. The elastic anisotropy leads to an orientation-dependent pull-off force and adhesion strength. This study could not only supply an exact solution to the generalized JKR model of transversely isotropic materials, but also suggest a reversible adhesion sensor designed by transversely isotropic materials, such as PZT or fiber-reinforced materials with parallel fibers. (c) 2007 Elsevier Ltd. All rights reserved.

Plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant materials

The plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant material are investigated in this paper. Applying the stress-strain relation for the pressure-sensitive dilatant material, we have obtained an exact asymptotic solution for the plane strain tip fields for two types of cracks, one of which lies in the pressure-sensitive dilatant material and the other in the elastic material and their tips touch both the bimaterial interface. In cases, numerical results show that the singularity and the angular variations of the fields obtained depend on the material hardening exponent n, the pressure sensitivity parameter mu and geometrical parameter lambda.

Materials selection in mechanical design for microsensors and microactuators

Microsensors and microactuators are vital organs of microelectromechanical systems (MEMS), forming the interfaces between controller and environment. They are usually used for devices ranging in size at sub-millimeter or micrometer level, transforming energy between two or more domains. Presently, most of the materials used in MEMS devices belong to the silicon material system, which is the basis of the integrated circuit industry. However, new techniques are being explored and developed, and the opportunities for MEMS materials selection are getting broader. The present paper tries to apply 'performance index' to select the material best suited to a given application, in the early stage of MEMS design. The selection is based on matching performance characteristics to the requirements. A series of performance indices are given to allow a wide range comparison of materials for several typical sensing and actuating structures, and a rapid identification of candidates for a given task. (C) 2002 Elsevier Science Ltd. All rights reserved.

Bio-inspired mechanics of reversible adhesion: Orientation-dependent adhesion strength for non-slipping adhesive contact with transversely isotropic elastic materials

Geckos and many insects have evolved elastically anisotropic adhesive tissues with hierarchical structures that allow these animals not only to adhere robustly to rough surfaces but also to detach easily upon movement. In order to improve Our understanding of the role of elastic anisotropy in reversible adhesion, here we extend the classical JKR model of adhesive contact mechanics to anisotropic materials. In particular, we consider the plane strain problem of a rigid cylinder in non-slipping adhesive contact with a transversely isotropic elastic half space with the axis of symmetry oriented at an angle inclined to the surface. The cylinder is then subjected to an arbitrarily oriented pulling force. The critical force and contact width at pull-off are calculated as a function of the pulling angle. The analysis shows that elastic anisotropy leads to an orientation-dependent adhesion strength which can vary strongly with the direction of pulling. This study may suggest possible mechanisms by which reversible adhesion devices can be designed for engineering applications. (C) 2006 Elsevier Ltd. All rights reserved.

Crack deflection at an interface between dissimilar elastic-materials

A crack intersecting an interface between two dissimilar materials may advance by either penetrating through the interface or deflecting into the interface. The competition between deflection and penetration can be assessed by comparison of two ratios: (i) the ratio of the energy release rates for interface cracking and crack penetration; and (ii) the ratio of interface to material fracture energies. Residual stresses caused by thermal expansion misfit can influence the energy release rates of both the deflected and penetrating crack. This paper analyses the role of residual stresses. The results reveal that expansion misfit can be profoundly important in systems with planar interfaces (such as layered materials, thin film structures, etc.), but generally can be expected to be of little significance in fiber composites. This paper corrects an earlier result for the ratio of the energy release rate for the doubly deflected crack to that for the penetrating crack in the absence of residual stress.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

Electronic structure of interfaces between copper-hexadecafluoro-phthalocyanine and 2,5-bis(4-biphenylyl) bithiophene

The interfaces formed between copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were examined using photoemission and inverse photoemission spectroscopy. It is observed that in F16CuPc/BP2T the heterojunction is characterized by band bending in both materials, while in BP2T/F16CuPc the band bending is confined in BP2T only. The combination of the band bending and finite Debye lengths provides an explanation to the observed ambipolar behavior of the organic thin film transistors based on such heterojunctions.

Stress-strain fields and the effectiveness shear properties for three-phase composites with imperfect interface

Based on the 'average stress in the matrix' concept of Mori and Tanaka (:Mori, T., Tanaka, K., 1973. Average stress in matrix and average elastic energy of materials with misfitting inclusion. Acta Metall. 21, 571-580) a micromechanical model is presented for the prediction of the elastic fields in coated inclusion composites with imperfect interfaces. The solutions of the effective elastic moduli for this kind of composite are also obtained. In two kinds of composites with coated particulates and fibers, respectively, the interface imperfections are takes to the assumption that the interface displacement discontinues are linearly related to interface tractions like a spring layer of vanishing thickness. The resulting effective shear modulus for each material and the stress fields in the composite are presented under a transverse shear loading situation.

Effects of Microstructural Heterogeneity on the Spallation Behavior of Materials

It is of utmost importance to understand the spallation behaviour of heterogeneous materials. In this paper, a driven nonlinear threshold model with stress fluctuation is presented to study the effects of microstructural heterogeneity on continuum damage evolution. The spallation behavior of heterogeneity material is analyzed with this model. The heterogeniety of mesoscopic units is characterized in terms of Weibull modulus m of strength distibution and stress fluctuation parameter k. At high stress, the maximum damage increases with m; while at low stress, the maximum damage decreases. In addition, for low stress, severe stress fluctuation causes higher damage; while for high stress, causes lower damage.

FEM Simulations and Optimization about Residual Stresses in Coating Structures with Functionally Graded Materials Layer

An elasto-plastic finite element method is developed to predict the residual stresses of thermal spraying coatings with functionally graded material layer. In numerical simulations, temperature sensitivity of various material constants is included and mix