Insight into human sex ratio imbalance: the more boys born, the more infertile men

This study investigated, through large-scale statistical analysis of the global population, whether the human sex ratio is skewing worldwide, and if so, why and how it shifts, and the impact of any shift on human reproduction. A significant imbalance of t

Ginsenoside R-e increases fertile and asthenozoospermic infertile human sperm motility by induction of nitric oxide synthase

We investigated the effects of Ginsenoside R-e on human sperm motility in fertile and asthenozoospermic infertile individuals in vitro and the mechanism by which the Ginsenosides play their roles. The semen samples were obtained from 10 fertile volunteers and 10 asthenozoospermic infertile patients. Spermatozoa were separated by Percoll and incubated with 0, 1, 10 or 100 mu M of Ginsenoside R-e. Total sperm motility and progressive motility were measured by computer-aided sperm analyzer (CASA). Nitric oxide synthase (NOS) activity was determined by the H-3-arginine to H-3-citrulline conversion assay, and the NOS protein was examined by the Western blot analysis. The production of sperm nitric oxide (NO) was detected using the Griess reaction. The results showed that Ginsenoside R-e significantly enhanced both fertile and infertile sperm motility, NOS activity and NO production in a concentration-dependent manner. Sodium nitroprusside (SNP, 100 nM), a NO donor, mimicked the effects of Ginsenoside R-e. And pretreatment with a NOS inhibitor N-omega-Nitro-L-arginine methyl ester (L-NAME, 100 mu M) or a NO scavenger N-Acetyl-L-cysteine (LNAC, 1 mM) completely blocked the effects of Ginsenoside R-e. Data suggested that Ginsenoside R-e is beneficial to sperm motility, and that induction of NOS to increase NO production may be involved in this benefit.

Unidirectional current flow of reversible redox couples on a MoO3 film-modified microelectrode

In this paper, we have investigated the reactivity of the molybdenum oxide film toward some standard redox systems (e.g., ferrocene (Fc) and its derivatives) and observed a few interesting phenomena. The results demonstrate that the electrochemical behaviour of Fc and its derivatives at the oxide-modified carbon fiber (CF) microelectrode differs from that at a bare CF microelectrode, The conductivity of the molybdenum oxide film is seriously affected by the range and the direction of the potential scan, which influences the electrochemical behaviour of these redox systems at the film electrode. If the cycling potential is more positive than the reduction potential of the molybdenum oxide film, the reduction and oxidation peak currents of Fc and its derivatives could not be observed. The result indicates that the molybdenum oxide film on a microelectrode surface cannot transfer electrons between the surface of the electrode and Fc or its derivatives due to the existence of a high resistance between the interface in these potential ranges. On the other hand, if the lower limit of the scan potential was extended to a potential more negative than the reduction peak potential of the film, the oxidation peak of Fc or its derivatives appeared at about the potential relative to E-0 of Fc or its derivatives on the bare electrode, and the peak current is proportional to the concentration of these couples in the electrolyte. To our surprise, the peak height on the modified electrode is much larger than that on the bare CF microelectrode under the same conditions in the range of low concentration of these couples, and the oxidation peak potential of these couples is more negative than that on the bare CF microelectrode. On the basis of the experimental observation, we propose that these redox couples may undergo an interaction with the reduction state of the molybdenum oxide film. The new phenomena that we observed have been explained by using this interaction. (C) 1997 Elsevier Science S.A.

A Numerical Model of Rapid Solidification Processing of Ni-Al Alloy in Planar Flow Casting

A numerical model has been developed for simulating the rapid solidification processing (RSP) of Ni-Al alloy in order to predict the resultant phase composition semi-quantitatively during RSP. The present model couples the initial nucleation temperature evaluating method based on the time dependent nucleation theory, and solidified volume fraction calculation model based on the kinetics model of dendrite growth in undercooled melt. This model has been applied to predict the cooling curve and the volume fraction of solidified phases of Ni-Al alloy in planar flow casting. The numerical results agree with the experimental results semi-quantitatively.

Solute transport in nanochannels with roughness-like structures

Newfound attention has been given to solute transport in nanochannels. Because the electric double layer (EDL) thickness is comparable to characteristic channel dimensions, nanochannels have been used to separate ionic species with a constant charge-to-size ratio (i.e., electrophoretic mobility) that otherwise cannot be separated in electroosmotic or pressure- driven flow along microchannels. In nanochannels, the electrical fields within the EDL cause transverse ion distributions and thus yield charge-dependent mean ion speeds in the flow. Surface roughness is usually inevitable during microfabrication of microchannels or nanochannels. Surface roughness is usually inevitable during the fabrication of nanochannels. In the present study, we develop a numerical model to investigate the transport of charged solutes in nanochannels with hundreds of roughness-like structures. The model is based on continuum theory that couples Navier-Stokes equations for flows, Poisson-Boltzmann equation for electrical fields, and Nernst-Planck equation for solute transports. Different operating conditions are considered and the solute transport patterns in rough channels are compared with those in smooth channels. Results indicate that solutes move slower in rough nanochannels than in smooth ones for both pressure- driven and electroosmotic flows. Moreover, solute separation can be significantly improved by surface roughness under certain circumstances.

Numerical investigation on a transition prediction model

A new transition prediction model is introduced, which couples the intermittency effect into the turbulence transport equations and takes the characteristics of fluid transition into consideration to mimic the exact process of transition. Test cases include a two-dimensional incompressible plate and a two-dimensional NACA0012 airfoil. Performance of this transition model for incompressible flows is studied, with numerical results consistent to experimental data. The requirement of grid resolution for this transition model is also studied.

Entanglement degree of electron pairs out of Andreev reflection

We study the entanglement degree of electron pairs emitted from an s-wave Superconductor, which Couples to two normal leads via a single-level quantum dot. Within the framework of scattering matrix theory. the concurrence is used to quantify the entanglement. And the result shows that the entanglement degree is generally influenced by the initial separation of the two electrons in a Cooper pair and the normal transmission eigenvalues T-1, T-2. But it is only determined by the eigenvalues in the tunnelling limit, T-1. T-2 << 1, what is more. it is measurable. (C) 2008 Elsevier B.V. All rights reserved.

Anisotropic Zeeman splitting and Stark shift of In1-yMnyAs1-xNx oblate quantum dots

The electronic structure, Zeeman splitting, and Stark shift of In1-yMnyAs1-xNx oblate quantum dots are studied using the ten-band k center dot p model including the sp-d exchange interaction between the carriers and the magnetic ion. The Zeeman splitting of the electron ground states is almost isotropic. The Zeeman splitting of the hole ground states is highly anisotropic, with an anisotropy factor of 918 at B=0.1 T. The Zeeman splittings of some of the electron and hole excited states are also highly anisotropic. It is because of the spin-orbit coupling which couples the spin states with the anisotropic space-wave functions due to the anisotropic shape. It is found that when the magnetic quantum number of total orbital angular momentum is nearly zero, the spin states couple with the space-wave functions very little, and the Zeeman splitting is isotropic. Conversely, if the magnetic quantum number of total orbital angular momentum is not zero, the space-wave functions in the degenerate states are different, and the Zeeman splitting is highly anisotropic. The electron and hole Stark shifts of oblate quantum dots are also highly anisotropic. The decrease of band gap with increasing nitrogen composition is much more obvious in the smaller radius case because the lowest conduction level is increased by the quantum confinement effect and is closer to the nitrogen level. (C) 2007 American Institute of Physics.

Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Effects of point defects on lattice parameters of semiconductors

A model for analyzing the correlation between lattice parameters and point defects in semiconductors has been established. The results of this model for analyzing the substitutes in semiconductors are in accordance with those from Vegard's law and experiments. Based on this model, the lattice strains caused by the antisites, the tetrahedral and octahedral single interstitials, and the interstitial couples are analyzed. The superdilation in lattice parameters of GaAs grown at low temperatures by molecular-beam epitaxy can be interpreted by this model, which is in accordance with the experimental results. This model provides a way of analyzing the stoichiometry in bulk and epitaxial compound semiconductors nondestructively.

Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of LTMBE GaAs. Annealing at above 300 degrees C, the arsenic interstitial couples decomposed, and As precipitates formed, resulting in a decrease in the lattice parameter.

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Electronic structures of the zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells

The electronic structures of the zinc-blende GaN/Ga0.85Al0.15N compressively strained superlattices and quantum wells are investigated using a 6 x 6 Hamiltonian model (including the heavy hole, light hole and spin-orbit splitting band). The energy bands, wavefunctions and optical transition matrix elements are calculated. It is found that the light hole couples with the spin-orbit splitting state even at the k=0 point, resulting in the hybrid states. The heavy hole remains a pure heavy hole state at k=0. The optical transitions from the hybrid valence states to the conduction states are determined by the transitions of the light hole and spin-orbit splitting states to the conduction states. The transitions from the heavy hole, light hole and spin-orbit splitting states to the conduction states obey the selection rule Delta n=0. The band structures obtained in this work will be valuable in designing GaN/GaAlN based optoelectronic devices. (C) 1996 Academic Press Limited