33 resultados para Industrial location

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

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In this paper we present a robust face location system based on human vision simulations to automatically locate faces in color static images. Our method is divided into four stages. In the first stage we use a gauss low-pass filter to remove the fine information of images, which is useless in the initial stage of human vision. During the second and the third stages, our technique approximately detects the image regions, which may contain faces. During the fourth stage, the existence of faces in the selected regions is verified. Having combined the advantages of Bottom-Up Feature Based Methods and Appearance-Based Methods, our algorithm performs well in various images, including those with highly complex backgrounds.

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The goal of image restoration is to restore the original clear image from the existing blurred image without distortion as possible. A novel approach based on point location in high-dimensional space geometry method is proposed, which is quite different from the thought ways of existing traditional image restoration approaches. It is based on the high-dimensional space geometry method, which derives from the fact of the Principle of Homology-Continuity (PHC). Begin with the original blurred image, we get two further blurred images. Through the regressive deducing curve fitted by these three images, the first iterative deblured image could be obtained. This iterative "blurring-debluring-blurring" process is performed till reach the deblured image. Experiments have proved the availability of the proposed approach and achieved not only common image restoration but also blind image restoration which represents the majority of real problems.