In situ analysis of electropolymerization of aniline by combined electrochemistry and surface plasmon resonance

The combination of electrochemistry with surface plasmon resonance (SPR) has been used to characterize the growth of polyaniline (PAn) on a gold electrode surface during potential cycling. Potential-modulated SPR characteristics of the PAn film were also revealed. The potential switch between the oxidized and reduced states of PAn can lead to a large change of SPR response due to the variation in the imaginary part of the dielectric constant of PAn film resulting from the transition of the film in conductivity. The redox transition of the PAn film during potential cycling is very profitable to the SPR measurements. Two modes of SPR measurement, SPR angular scan (R-theta) and the time evolution of the reflectivity change at a fixed angle (R-t), were displayed to study the growth process of the PAn film. The angle shift of the resonance minimum recorded at each cathodic limit of cyclic potential scanning allows for the unambiguous measurement of the film growth. During cyclic potential scanning, the R-t curve was repeatedly modulated with the direction of the potential ramp as a result of the redox switch of the PAn film, and the amplitude of potential-modulated reflectivity change was well correlated with the cyclic number. The time differential of the R-t curve permits continuous monitoring of the film growth process. These results illustrate that the combined technique is suitable for studying the electropolymerization process of a conducting polymer.

Adsorption and reaction of thiophene and H2S on Mo2C/Al2O3 catalyst studied by in situ FT-IR spectroscopy

The reactions of both thiophene and H2S onMo(2)C/Al2O3 catalyst have been studied by in situ FT-IR spectroscopy. CO adsorption was used to probe the surface sites of Mo2C/Al2O3 catalyst under the interaction and reaction of thiophene and H2S. When the fresh Mo2C/Al2O3 catalyst is treated with a thiophene/H-2 mixture above 473 K, hydrogenated species exhibiting IR bands in the regions 2800-3000 cm(-1) are produced on the surface, indicating that thiophene reacts with the fresh carbide catalyst at relatively low temperatures. IR spectra of adsorbed CO on fresh Mo2C/Al2O3 pretreated by thiophene/H-2 at different temperatures clearly reveal the gradual sulfidation of the carbide catalyst at temperatures higher than 473 K, while H2S/H-2 can sulfide the Mo2C/Al2O3 catalyst surface readily at room temperature (RT). The sulfidation of the carbide surface by the reaction with thiophene or H2S maybe the major cause of the deactivation of carbide catalysts in hydrotreating reactions. The surface of the sulfided carbide catalyst can be only partially regenerated by a recarburization using CH4/H-2 at 1033 K. When the catalyst is first oxidized and then recarburized, the carbide surface can be completely reproduced.

The surface sites of sulfated zirconia studied in situ by laser-induced fluorescence spectroscopy

The surface sites of sulfated zirconia were investigated in situ by laser-induced fluorescence spectroscopy using aniline as the probe molecule. Different from the cases for many other oxides, the aniline adsorbed on the unique active sites of sulfated zirconia at r.t. is changed into another species, which emits a characteristic fluorescence band at 422 nm. The results illustrate that the sulfate groups in sulfated zirconia are favorable for the generation of these unique active sites, which also rarely exist on pure zirconia composed of tetragonal and monoclinic phases but do not exist on pure zirconia composed of monoclinic phase. (C) 2004 Elsevier B.V. All rights reserved.

Study on the thermal stability of InN by in-situ laser reflectance system

The thermal stability of InN in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, X-ray diffraction and X-ray photoelectron spectroscopy. It was found that InN can withstand isothermal annealing at temperature as high as 600 degrees C in NH3 ambient. While in N-2 atmosphere, it will decompose quickly to form In-droplets at least at the temperature around 500 degrees C, and the activation energy of InN decomposition was estimated to be 2.1 +/- 0.1 eV. Thermal stability of InN when annealing in NH3 ambient during temperature altering would be very sensitive to ramping rate and NH3 flow rate, and InN would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. Whereas In-droplets formation was found to be the most frequently encountered phenomenon concerning InN decomposition, annealing window for conditions free of In-droplets was worked out and possible reasons related are discussed. In addition, InN will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. Hall measurement shows that annealing treatment in such window will improve the electrical properties of InN. (c) 2005 Elsevier B.V. All rights reserved.

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

In situ IR spectroscopic studies on molybdenum nitride catalysts: active sites and surface reactions

Recent IR spectroscopic studies on the surface properties of fresh Mo2N/gamma-Al2O3 catalyst are presented in this paper. The surface sites of fresh Mo2N/gamma-Al2O3, both Modelta+ (0<δ<2) and N sites, are probed by CO adsorption. Two characteristic IR bands were observed at 2045 and 2200 cm(-1), due to linearly adsorbed CO on Mo and N sites, respectively. The surface N sites are highly reactive and can react with adsorbed CO to form NCO species. Unlike adsorbed CO on reduced passivated one, the adsorbed CO on fresh Mo2N/gamma-Al2O3 behaves similarly to that of group VIII metals, suggesting that fresh nitride resembles noble metals. It is found that the surface of Mo nitrides slowly transformed into sulfide under hydrotreating conditions, which could be the main reason for the activity drop of molybdenum nitride catalysts in the presence of sulfur-containing species. Some surface reactions, such as selective hydrogenation of 1,3-butadiene, isomerization of 1-butene, and hydrodesulfurization of thiophene, were studied on both fresh and reduced passivated Mo2N/gammaAl(2)O(3) catalysts using IR spectroscopy. The mechanisms of these reactions are proposed. The adsorption and reaction behaviors of these molecules on fresh molybdenum nitride also resemble those on noble metals, manifesting the unique properties of fresh molybdenum nitride catalysts. Mo and N sites are found to play different roles in the adsorption and catalytic reactions on the fresh Mo2N/gammaAl(2)O(3) catalyst. Generally, Mo sites are the main active sites for the adsorption and reactions of adsorbates; N sites are not directly involved in catalytic reactions but they modify the electronic properties of Mo sites.

In situ FT-IR spectroscopic studies of CO adsorption on fresh Mo2C/Al2O3 catalyst

The surface sites of supported molybdenum carbide catalyst derived from different synthesis stages have been studied by in situ FT-IR spectroscopy using CO as the probe molecule. Adsorbed CO on the reduced passivated Mo2C/Al2O3 catalyst gives a main band at 2180 cm(-1), which can be assigned to linearly adsorbed CO on Mo4+ sites. The IR results show that the surface of reduced passivated sample is dominated by molybdenum oxycarbide. However, a characteristic IR band at 2054 cm-1 was observed for the adsorbed CO on MoO3/Al2O3 carburized with CH4/H-2 mixture at 1033 K (fresh Mo2C/Al2O3), which can be assigned to linearly adsorbed CO on Modelta+ (0 < delta < 2) sites Of Mo2C/Al2O3, Unlike adsorbed CO on reduced passivated Mo2C/Al2O3 catalyst, the IR spectra of adsorbed CO on fresh Mo2C/Al2O3 shows similarity to that on some of the group VIII metals (such as Pt and Pd), suggesting that fresh carbide resembles noble metals. To study the stability Of Mo2C catalyst during H-2 treatment and find proper conditions to remove the deposited carbon species, H-2 treatment of fresh Mo2C/Al2O3 catalyst at different temperatures was conducted. Partial amounts of carbon atoms in Mo2C along with some surface-deposited carbon species can be removed by the H, treatment even at 450 K. Both the surface-deposited carbon species and carbon atoms in carbide can be extensively removed at temperatures above 873 K.