16 resultados para Image of Go

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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利用反应显微谱仪对70keV He2+-He转移电离过程中的出射电子进行了成像,研究了出射电子的空间速度分布特征.结果表明:电子主要集中在散射平面内;在散射平面内,电子速度分布介于零与入射离子速度Vp之间(即前向出射)且在散射离子和靶核核间轴处有一极小值,呈现出典型的双峰结构.出射电子的上述分布特征可由出射电子波函数σ振幅和π振幅的干涉进行定性解释,σ振幅和π振幅对出射电子波函数的贡献与碰撞参数相关.在小碰撞参数下,π振幅的贡献更加明显;而在大碰撞参数下,σ振幅的贡献更加显著.

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High-resolution electron macroscopic images of lamellar single crystal of polyethylene (PE) have been successfully obtained using high-resolution electron microscopy (HREM), although so far the feasibility of obtaining HREM images from such a radiation sensitive polymer is still drastically questioned. The HREM images with a clear two-dimensional periodic structure reported here were recorded in a transmission electron microscope operated at 200 kV. The images consisted of lattice fringes derived from the <001> zone, and the structure images of different lattice fringes were resolved. To our knowledge, this is the first time that such clear structure images of PE have been reported at a molecular level.

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Molecular layer of tungstosilicic acid (H4SiW12O40) deposited on freshly-cleaved highly oriented pyrolytic graphite (HOPG) was observed by scanning tunneling microscopy (STM) in air at room temperature. The molecular dimension (11.5 Angstrom) of H4SiW12O40 measured by STM is consistent with known crystallographic parameter. We also imaged the boundary of H4SiW12O40 molecular layer on HOPG showing that molecular layer of H4SiW12O40 was formed. It has been proved that individual tungstosilicic acid species is imaged. The probable reason for the formation of the molecular layer is also discussed.

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The variation in molecule adsorption mode on pretreated highly oriented pyrolytic graphite electrodes, modified with the title complex K10H3[Dy(SiMo11O39)(2)] by cyclic voltammetry in the title complex solution, was observed in situ by electrochemical scanning tunnelling microscopy (ECSTM) with molecular resolution in sodium sulphate solution. According to the ECSTM images and the known molecular structure we conclude that the adsorption mode of the title complex modified electrode changed during potential cycling from ''vertical'' to ''inclined'' and then ''horizontal'' or ''flat'' mode, i.e. the title complex adsorbed on the surface of electrode by one ligand of the complex at first, then began to incline and was finally adsorbed by two ligands of the complex. This result indicates that the adsorption mode on the modified electrode surface changed during potential cycling in the sulphate solution and a much more stable molecular layer was formed. The change in adlattice of adsorbates on the modified electrode surface from hexagonal to rectangular was also observed by ECSTM. A plausible model was given to explain this process.

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Wave-number spectrum technique is proposed to retrieve coastal water depths by means of Synthetic Aperture Radar (SAR) image of waves. Based on the general dispersion relation of ocean waves, the wavelength changes of a surface wave over varying water depths can be derived from SAR. Approaching the analysis of SAR images of waves and using the general dispersion relation of ocean waves, this indirect technique of remote sensing bathymetry has been applied to a coastal region of Xiapu in Fujian Province, China. Results show that this technique is suitable for the coastal waters especially for the near-shore regions with variable water depths.

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There are several examples of horizontal ringlike prominences in the observations of Ha monochromatic image of the sun. In the present paper the statie equilibrium of the plasma loop is discussed. The analytic solutions to magnetic field and density are obtained for the axisymmetrie case under the closed boundary condition. Results show the great influence of the gravity and different force-free factors on the configurations of magnetic surfaces and the distributions of thermodynamical quantities for the prominence.

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A simple method to suppress the zero-order diffraction in the reconstructed image of digital holography is presented. In this method, the Laplacian of a detected hologram is used instead of the hologram itself for numerical reconstruction by computing the discrete Fresnel integral. This method can significantly improve the image quality and give better resolution and higher accuracy of the reconstructed image. The main advantages of this method are its simplicity in experimental requirements and convenience in data processing. (C) 2002 Society of Photo-optical Instrumentation Engineers.

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A columnal islands system, which was composed of three layers of self-assembled InAs/GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate. The effects of the thickness of GaAs space layer, the growth interruption time and the amount of InAs deposition on the emission wavelength of columnal islands were presented. The image of atomic force microscopy (AFM) indicated the columnal islands with high uniformity in size and shape. At room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4 mum; however, the emission wavelength of single-layer QDs with normal height was just 1. l mum. It provides a useful and intuitive approach to artificially control the emission wavelength of a QD material system.

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Six-stacked InAs/In0.52Al0.48As self-assembled quantum wires (QWRs) on InP(001) by molecular-beam epitaxy (MBE) have been studied by high-resolution transmission electron microscopy (HRTEM) and polarized PL measurements. We obtained the chemical lattice fringe (CLF) image of InAs self-assembled QWRs embedded in the In0.52Al0.48As matrix by the interference between the (002)-diffracted beam and the transmitted beam in the image plane of the objective lens. The results show that the InAs QWRs were bounded by (113), (001) and (114) facets. Both the size and strain distribution in QWRs were determined. It was found that with the growth of successive periods, the height and height fluctuation of InAs QWRs decreased from the bottom period to the upper one. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs. (c) 2005 Elsevier B.V. All rights reserved.

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Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 850 degrees C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (C) 2000 Elsevier Science B.V. All rights reserved.

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ZnO thin films were grown on GaAs (001) substrates by metal-organic chemical vapor deposition (MOCVD) at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement (XRD) results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy (SEM) image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge (3. 33eV) emissions with little or no deep-level e- mission related to defects.

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Dip-pen nanolithography (DPN) has been developed to pattern monolayer film of various molecules on suitable substrate through the controlled movement of ink-coated atomic force microscopy (AFM) tip, which makes DPN a potentially powerful tool for making the functional nanoscale devices. In this paper, the direct patterning of rhodamine 6G on mica by dip-pen nanolithography was demonstrated. R6G features patterned on the mica was successfully achieved with different tip movement which can be programmed by Nanoscript(TM) language. From the AFM image of R6G patterns, we know that R6G molecule is flatly binding to the mica surface through electrostatic interaction, thus stable R6G nanostructures could be formed on mica. The influence of translation speed and contact time on DPN was discussed. The method can be extended to direct patterning of many other organic molecules, and should open many opportunities for miniaturized optical device and site-specific biological staining.

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Nanoparticulate ferric oxide - tris - (2,4-di-t-amylphenoxy) - (8-quinolinolyl) copper phthalocyanine Langmuir-Blodgett Z-type multilayers were obtained by using monodisperse nanoparticle ferric oxide hydrosol as the subphase. XPS data reveal that the nanoparticle ferric oxide exist as alpha -Fe2O3 phase in the films. Transition electron microscopic (TEM) image of the alternating monolayer shows that the film was highly covered by the copper phthalocyanine derivative and the nanoparticles were arranged rather closely. IR and visible spectra all give the results that the nanoparticles were deposited onto the substrate with the copper phthalocyanine derivative. The gas-sensing measurements show that the alternating LB film had very fast response-recovery characteristic to 2 ppm C2H5OH gas, and also sensitive to larger than 200 ppm NH3.

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Scanning probe microscopy was used to simultaneously determine the molecular chain structure and intrinsic mechanical properties, including anisotropic elastic modulus and friction, for lamellae of highly oriented high-density polyethylene (HDPE) obtained by the melt-drawn method. The molecular-scale image of the highly oriented lamellae by friction force microscopy (FFM) clearly shows that the molecular chains are aligned parallel to the drawing direction, and the periodicities along and perpendicular to the drawing direction are 0.26 and 0.50 nm, respectively. The results indicate that the exposed planes of the lamellae resulting from the melt-drawn method are (200), which is consistent with results of transmission electron microscopy and electron diffraction. Because of the high degree of anisotropy in the sample, coming from alignment of the molecular chains along the drawing direction, the measured friction force, F, determined by FFM is strongly dependent on the angle, theta, between the scanning direction and the chain axis. The force increases as theta is increased from 0 degrees (i.e., parallel to the chain axis) to 90 degrees (i.e., perpendicular to the chain axis). The structural anisotropy was also found to strongly influence the measurements of the transverse chain modulus of the polymer by the nanoindentation technique. The measured value of 13.8 GPa with transverse modulus was larger than the value 4.3 GPa determined by wide-angle X-ray diffraction, which we attributed to anisotropic deformation of the lamellae during nanoindentation measurements that was not accounted for by the elastic treatment we adopted from Oliver and Pharr. The present approach using scanning probe microscopy has the advantage that direct correlations between the nanostructure, nanotribology, and nanomechanical properties of oriented samples can be determined simultaneously and simply.