Elastic fields of interacting elliptic inhomogeneities

This paper presents a method for the calculation of two-dimensional elastic fields in a solid containing any number of inhomogeneities under arbitrary far field loadings. The method called 'pseudo-dislocations method', is illustrated for the solution of interacting elliptic inhomogeneities. It reduces the interacting inhomogeneities problem to a set of linear algebraic equations. Numerical results are presented for a variety of elliptic inhomogeneity arrangements, including the special cases of elliptic holes, cracks and circular inhomogeneities. All these complicated problems can be solved with high accuracy and efficiency.

Generation of strong quasistatic magnetic fields in interactions of ultraintense and short laser pulses with overdense plasma targets

An analytical fluid model is proposed for the generation of strong quasistatic magnetic fields during normal incidence of a short ultraintense Gaussian laser pulse with a finite spot size on an overdense plasma. The steepening of the electron density profile in the originally homogeneous overdense plasma and the formation of electron cavitation as the electrons are pushed inward by the laser are included self-consistently. It is shown that the appearance of the cavitation plays an important role in the generation of quasistatic magnetic fields: the strong plasma inhomogeneities caused by the formation of the electron cavitation lead to the generation of a strong axial quasistatic magnetic field B-z. In the overdense regime, the generated quasistatic magnetic field increases with increasing laser intensity, while it decreases with increasing plasma density. It is also found that, in a moderately overdense plasma, highly intense laser pulses can generate magnetic fields similar to 100 MG and greater due to the transverse linear mode conversion process.

非均匀性对增透膜增透特性的影响

通过对基底与膜层、膜层之间界面处非均匀性对增透膜增透性能影响的讨论，得到以下结论：在沉积初期，由于基底表面特性和沉积参数的波动，从而在基底与膜层之间产生过渡层，使增透性能减弱，对增透膜的增透效果影响较大；在膜层之间的过渡层，正余弦过渡使增透性能变强，双曲、指数使增透性能减弱，但影响较小，线性渐变基本没有影响。实验镀制了增透膜并对其进行拟合分析，发现基底与膜层以及膜层之间的过渡层按正余弦变化时与实验结果比较吻合，并给予了解释。

非均匀性对单层膜光学特性的影响

探讨了不同规律的非均匀性对单层膜的光谱特性的影响，与均匀单层膜对比发现：折射率正变引起透射率的极大值减小，折射率负变引起透射率的极大值变大，当非均匀性很小时，透射率的极小值基本不变．对实验制备的单层膜从实验和理论上进行了对比并给出了较好的拟合，发现在薄膜和基底的界面处存在一过渡层，过渡层可近似为线性，并从理论上给予了分析解释．

Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots

InGaN/GaN quantum dots were grown on the sapphire (0 0 0 1) substrate in a metalorganic chemical vapor deposition system. The morphologies of QDs deposited on different modified underlayer (GaN) surfaces, including naturally as grown, Ga-mediated, In-mediated, and air-passivated ones, were investigated by atomic force microscopy (AFM). Photo luminescence (PL) method is used to evaluate optical properties. It is shown that InGaN QDs can form directly on the natural GaN layer. However, both the size and distribution show obvious inhomogeneities. Such a heavy fluctuation in size leads to double peaks for QDs with short growth time, and broad peaks for QDs with long growth time in their low-temperature PL spectra. QDs grown on the Ga-mediated GaN underlayer tends to coalesce. Distinct transform takes place from 3D to 2D growth on the In-mediated ones, and thus the formation of QDs is prohibited. Those results clarify Ga and In's surfactant behavior. When the GaN underlayer is passivated in the air, and together with an additional low-temperature-grown seeding layer, however, the island growth mode is enhanced. Subsequently, grown InGaN QDs are characterized by a relatively high density and an improved Gaussian-like distribution in size. Short surface diffusion length at low growth temperature accounts for that result. It is concluded that reduced temperature favors QD's 3D growth and surface passivation can provide another promising way to obtain high-density QDs that especially suits MOCVD system. (c) 2004 Elsevier Ltd. All rights reserved.

Study on the reverse characteristics of Ti/6H-SiC Schottky contacts

The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.

Performance inhomogeneity of gelatin during gelation process

The structural and performance inhomogeneities of gelatin gel can directly affect its application as a kind of functional material. The structural inhomogeneity of gelatin caused by the uneven and unstable temperature field has been analyzed by the finite element method in our previous work. Further in this paper, the performance inhomogeneity of gelatin which is closely connected with the actual application is numerically analyzed during the gelation process, which includes the inhomogeneities of the optical and mechanical properties of gelatin gels. The time required for reaching the gel point at different spatial grids is exhibited and discussed. The calculated results also show that the equilibrium shear modulus of gelatin is dependent on the thermal history.