端基官能化共轭齐聚物的设计与合成

和共轭聚合物相比，单分散共轭齐聚物具有结构确定、易提纯等优点，不仅是建立共轭体系结构与性能关系的最佳模型，而且是一类高纯度光电子材料，还是构造具有规整结构嵌段共聚物和超分子体系的理想构造单元。鉴于基于芴单元的共轭齐聚物与聚合物具有优异的光电性能，引入不同端基能够有效调节共轭齐聚物的性能，本论文以端基官能化齐聚芴为研究对象，设计与合成了具有不同端基结构的系列单分散齐聚芴，研究了它们基本的物理化学性质，主要成果与创新点如下： 1、利用Horner-Wadsworth-Emmons反应、Wittig反应和Heck偶联反应，交替引入极性、非极性反应端基，成功解决了发散法合成较长单分散共轭齐聚物过程中产物难以提纯的技术问题，合成了系列芴撑乙烯撑共轭齐聚物。其中，最长的齐聚物含11个芴单元，光谱外推得到的有效共轭长度可达19个重复单元。DSC和偏光显微镜研究表明，芴单元数大于5的齐聚物可形成向列型液晶相。含7个芴单元以上的齐聚物可用于制备有机发光二极管，含11个芴单元的齐聚物电致发光效率是相应聚合物的5倍。 2、通过Hagigara-Sonogashira偶联、Diels-Alder环加成等反应合成了一系列端基为刚性的苯乙炔基和五苯基苯的单分散齐聚芴。但典型Scholl反应条件不能实现完全氧化脱氢，获得六苯并晕苯封端的齐聚芴。光谱研究表明苯乙炔基的引入导致吸收光谱和荧光光谱有1-2 nm的红移。五苯基苯结构的引入能显著提高齐聚芴的Tg，从而提高齐聚物的形态稳定性。 3、利用Yamamoto反应，采用端基溴代的齐聚芴大分子单体聚合结合制备色谱分离，成功地制备了分子量超过20000 Da的单分散共轭聚合物，说明大分子单体聚合结合制备色谱分离制备单分散共轭聚合物是可行的。 4、通过Horner-Wadsworth-Emmons反应合成一系列端基为三苯胺乙烯撑的单分散齐聚芴，其中，最长的齐聚物含9个芴单元。光谱研究表明，随芴单元数的增加，两个三苯胺乙烯撑端基间共轭作用显著减弱，最大吸收波长蓝移；当芴的单元数≥3时，最大发射波长均位于450 nm，和聚芴和齐聚芴相比，这类共轭齐聚物的蓝光发光峰位更佳。电化学研究表明三苯胺乙烯撑单元的氧化还原过程不受齐聚芴单元长度的影响，该封端齐聚芴的HOMO能级主要是由三苯胺乙烯撑单元决定。 关键词：端基官能化，齐聚芴，单分散共轭聚合物

Numerical Simulation of Gaseous Detonation of H_2-O_2 Mixture with Detailed Chemical Reaction Model

采用高精度的ENO格式和基于基元化学反应的真实化学反应模型求解氢氧混合气体一维爆轰波的精细结构。采用直接起爆方法得到稳定传播的爆轰波,计算的爆轰波阵面参数和实验相当符合。对爆轰波反应区化学反应的研究表明,参与反应的不同组分具有不同类型的变化特征。网格尺寸影响的研究表明,计算结果的精度随着网格尺寸的增加而增加,并能保持较好的收敛性。移动网格研究结果表明,网格运动速度和爆轰速度接近时,两者的相互作用对计算结果产生一定影响。

Microscopic theory of chemical-reaction rate

In this paper we deduce the formulae for rate-constant of microreaction with high resolving power of energy from the time-dependent Schrdinger equation for the general case when there is a depression on the reaetional potential surface (when the depression is zero in depth, the case is reduced to that of Eyring). Based on the assumption that Bolzmann distribution is appropriate to the description of reactants, the formula for the constant of macrorate in a form similar to Eyring's is deduced and the expression for the coefficient of transmission is given. When there is no depression on the reactional potential surface and the coefficient of transmission does not seriously depend upon temperature, it is reduced to Eyring's. Thus Eyring's is a special case of the present work.

Polymerase chain reaction based C4AQ0 and C4BQ0 genotyping: association with systemic lupus erythematosus in southwest Han Chinese

Objective: To investigate the association of complement C4 null genes (C4QO, including C4AQO and C4BQO) and C2 gene with systemic lupus erythematosus (SLE) in southwest Han Chinese; 136 patients with SLE and 174 matched controls were genotyped. Methods: C4 null genes were determined by a polymerase chain reaction (PCR) procedure with sequence specific primers (PCR-SSP). The 2 bp insertion in exon 29, which was previously identified in non-Chinese populations and caused defective C4A genes, was directly typed by sequencing the whole exon 29 using exon specific primers. The exon 6 of complement C2 was also sequenced in both the patients and controls. Results: The frequency of homozygous C4AQO allele was 12.5% (17/136) in patients with SLE compared with 1.1% (2/174) in controls (p<0.001, odds ratio (OR)=12.286, 95% confidence interval (95% CI) 2.786 to 54.170). There was no significant difference for homozygous C4BQO allele between patients with SLE and controls (p=0.699). Patients with the C4AQO gene had an increased risk of acquiring renal disorder, serositis, and anti-dsDNA antibodies compared with those without C4AQO (for renal disorder, p=0.018, OR=8.951, 95% Cl 1.132 to 70.804; for serositis, p=0.011, OR 4.891, 95% CI 1.574 to 15.198; for anti-dsDNA, p=0.004, OR 7.630, 95%Cl 1.636 to 35.584). None of the patients or controls had the 2 bp insertion in exon 29 of the C4 gene. The type I C2 deficiency was not detected in the 3 10 samples. Conclusion: It is suggested that deficiency of C4A (not due to a 2 bp insertion in exon 29), but not C4B or C2, may be a risk factor for acquiring SLE in south west Han Chinese; this results in increased risk of renal disorder, serositis, and anti-dsDNA antibodies in patients with SLE. Racial differences seem to be relevant in susceptibility to SLE.

Effects of gamma-aminobutyric acid, progesterone and ionophore A23187 on acrosome reaction of tree shrew sperm in vitro: examination of acrosome reaction with an improved fluorescence microscopy

A number of acrosome reaction (AR) initiators have been found to be effective in inducing AR of human, laboratory and domestic animal sperm. Using an improved simple fluorescence microscopy, effects of gamma-aminobutyric acid (GABA), progesterone and ionophore A23187 on sperm AR of tree shrew, a useful animal model in biomedical research, have been investigated. Spontaneous AR in 4.92-7.53% of viable sperm was observed. Complete AR in 10.31-18.25% of viable tree shrew sperm was obviously induced by 5 mu M and 10 mu M calcium ionophore A23187, 1 mM GABA, and 5 mu M progesterone, and there were no significant differences between their abilities to initiate complete AR. No significant differences of AR percentages between 1- and 2-h treatments with A23187, progesterone and/or GABA were observed. These results suggested that the responses of tree shrew sperm to these AR initiators are similar to that of human and other mammalian sperm. (C) 1997 Elsevier Science B.V.

A detection method for grass carp hemorrhagic virus (GCHV) based on a reverse transcription polymerase chain reaction

A rapid, sensitive and highly specific detection method for grass carp hemorrhagic virus (GCHV) based on a reverse transcription-polymerase chain reaction (RT-PCR) has been developed. Two pairs of PCR primers were synthesized according to the cloned cDNA sequences of the GCHV-861 strain. For each primer combination, only one specific major product was obtained when amplification was performed by using the genomic dsRNA of GCHV-861 strain. The lengths of their expected products were 320 and 223 bp, respectively. No products were obtained when nucleic acids other than GCHV-861 genomic RNA were used as RT-PCR templates. To assess the sensitivity of the method, dilutions of purified GCHV-861 dsRNA total genome (0.01 pg up to 1000 pg) were amplified and quantities of as little as 0.1 pg of purified dsRNA were detectable when the amplification product was analyzed by 1.5% agarose gel electrophoresis. This technique could detect GCHV-861 not only in infected cell culture fluids, but also in infected grass carp Ctenopharyngodon idellus and rare minnow Gobiocypris rarus with or without hemorrhagic symptoms. The results show that the RT-PCR amplification method is useful for the direct detection of GCHV.

Wear resistance of reaction sintered alumina/mullite composites

Alumina and alumina/mullite composites with mullite content of 0.96-8.72 vol.% were subjected to an abrasive wear test under loads of 0.1-2.0 N with a ball-on-disc apparatus. The wear rate and area fraction of pullout f(po) on the worn surfaces were measured. The wear resistances of the alumina/mullite composites were better by a factor of 1-2 than that of pure alumina. The main wear mechanism of alumina is fracture wear, and for alumina/mullite composites, fracture wear and plastic wear mechanisms work together. The influence of mechanical properties on wear resistance was estimated by Evans' method. It was found that the wear rate depends on f(po), and the primary reason for the better wear resistance of alumina/mullite composites is the reduction off, induced by fracture mode transition. (c) 2007 Elsevier B.V. All rights reserved.

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates. (c) 2005 Elsevier B.V. All rights reserved.

SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an 'inter-mixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.