Effective elastic modulus of bone-like hierarchical materials

A shear-lag model is used to study the mechanical properties of bone-like hierarchical materials. The relationship between the overall effective modulus and the number of hierarchy level is obtained. The result is compared with that based on the tension-shear chain model and finite element simulation, respectively. It is shown that all three models can be used to describe the mechanical behavior of the hierarchical material when the number of hierarchy levels is small. By increasing the number of hierarchy level, the shear-lag result is consistent with the finite element result. However the tension-shear chain model leads to an opposite trend. The transition point position depends on the fraction of hard phase, aspect ratio and modulus ratio of hard phase to soft phase. Further discussion is performed on the flaw tolerance size and strength of hierarchical materials based on the shear-lag analysis.

Shock slip-relations for thermal and chemical nonequilibrium flows

This paper appears to be the first where the multi-temperature shock slip-relations for the thermal and chemical nonequilibrium flows are derived. The derivation is based on analysis of the influences of thermal nonequilibrium and viscous effects on the mass, momentum and energy flux balance relations at the shock wave. When the relaxation times for all internal energy modes tend to sere, the multi-temperature shock slip-relations are converted into single-temperature ones for thermal equilibrium hows. The present results can be applied to flows over vehicles of different geometries with or without angles of attack. In addition, the present single-temperature shock slip-relations are compared with those in the literature, and Some defects and limitations in the latter are clarified.

Parameter-transformation relations for traveling-wave solutions of kdv-burgers equation

 Burgers suggested that the main properties of free-turbulence in the boundless area without basic flow might be understood with the aid of the following equation, which was much simpler than those of fluid dynamics, 更多还原

Magnetostatic relations including fluctuation fields - the local expansion

Using the approach of local expansion, we analyze the magnetostatic relations in the case of conventional turbulence. The turbulent relations are obtained consisten tly for themomentum equation and induction equation of both the average and fluctuation relations.In comparison with the magnetostatic relations as discussed usually, turbulent fluctuationfields produce forces, one of which 1/(4π)(α1×B0)×B0 may have parallel and perpendicular components in the direction of magnetic field, the other of which 1/(4π)K×B0 is introduced by the boundary value of turbulence and is perpendicular to the magnetic field. In the case of 2-dimensional configuration of magnetic field, the basic equation will be reduced into a second-order elliptic equation, which includes some linear and nonlinear terms introduced by turbulent fluctuation fields. Turbulent fields may change the configuration of magnetic field and even shear it non-uniformly. The study on the influence of turbulent fields is significant since they are observed in many astrophysical environments.

The magnetostatic relations including fluctuation fields

The influences of the fluctuation fields are important in many astrophysical environments as shown by the observations, and can not be neglected. On the basis of the first-order smoothing approximation, in the present paper, we demonstrate the magnetostatic equations for both the cases of the conventional turbulence aud the random waves, and discuss the consistent conditions of the equations. In the static problem, the fluctuation Lorentz force(▽×δB)×δB influences the large-scale configurations of magnetic field. To study this influence in detail is quite necessary for the explanations of the observation features, especially for the astrophysical environments where the magnetic fields, including the fluctuation fields, are the dominant factors in the equilibrium of momentum and energy.

A hierarchical approach coupled with coarse DEM information for improving the efficiency and accuracy of forest mapping over very rugged terrains

Forest mapping over mountainous terrains is difficult because of high relief Although digital elevation models (DEMs) are often useful to improve mapping accuracy, high quality DEMs are seldom available over large areas, especially in developing countries

Preparation of self-supporting hierarchical nanostructured anatase/rutile composite TiO2 film

Via the combination of an electrospinning method with a hydrothermal reaction, a large-scale cedar-like hierarchical nanostructured TiO2 film with an anatase/rutile composite phase was fabricated.

Electron transport through hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots

The transmission of electrons through a hierarchical self-assembly of GaAs/AlxGa(1-)xAs quantum dots (QDs) is calculated using the coupled-channel recursion method. Our results reveal that the number of conductance peaks does not change when the barrier widths change, but the intensities decrease as the barrier widths increase. The conductance peaks will shift towards low Fermi energies as the transverse width of GaAs QD increases, as the thickness of GaAs quantum well increases, or as the height of GaAs QDs decreases. Our calculated results may be useful in the application of QDs to photoelectric devices. (c) 2005 American Institute of Physics.

Asymmetric quantum-confined Stark effects of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots

Quantum-confined Stark effects in GaAs/AlxGa1-xAs self-assembled quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that the electron and hole energy levels and the optical transition energies can cause blueshifts when the electric field is applied along the opposite to the growth direction. Our calculated results are useful for the application of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots to photoelectric devices. (c) 2005 American Institute of Physics.

Effective-mass theory for hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots

The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that (1) electronic energy levels decrease monotonically, and the energy difference between the energy levels increases as the GaAs quantum dot (QD) height increases; (2) strong state mixing is found between the different energy levels as the GaAs QD width changes; (3) the hole energy levels decrease more quickly than those of the electrons as the GaAs QD size increases; (4) in excited states, the hole energy levels are closer to each other than the electron ones; (5) the first heavy- and light-hole transition energies are very close. Our theoretical results agree well with the available experimental data. Our calculated results are useful for the application of the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots to photoelectric devices.