Indentation Creep Behavior in Ce-Based Bulk Metallic Glasses at Room Temperature

The room temperature creep behaviors of Ce-based bulk metallic glasses were examined by the use of nanoindentation. The creep rate and creep rate sensitivity of Ce-based BMGs were derived from indentation creep curves. The low creep rate sensitivity of Ce-based BMGs indicates that the room temperature creep is dominated by localized shear flow. The experimental creep curves can be described by a generalized Kelvin model. Furthermore, the creep retardation spectrum is calculated for the Ce-based metallic glasses. The results showed that creep retardation spectrum consists of two relatively separated peaks with the well defined characteristic relaxation times.

Influence of Indenter Tip Roundness on Hardness Behavior in Nanoindentation

In this paper. the effect of indenter tip roundness on hardness behavior for two typical elastic perfectly plastic materials is studied by means of finite element simulation. A rigid conical indenter of semi apex angle 70.3 degrees fitted smoothly with a spherical tip is employed. It is shown that as the indentation depth increases hardness first rises from zero, reaches a maximum and then decreases slowly approaching asymptotically the limiting value equal to that due to a conical indenter of ideally sharp tip. The range within which hardness varies appreciably is comparable to the radius of the indenter tip. The difference between the maximum value and the limiting value depends on the yield stress over the Young's modulus ratio. The smaller this ratio the greater the difference is. Numerical simulation also provides an opportunity for checking the accuracy and limitations of the widely used Oliver-Pharr method.

A field model interpretation of crack initiation and growth behavior in ferroelectric ceramics: change of poling direction and boundary condition

Strain energy density expressions are obtained from a field model that can qualitatively exhibit how the electrical and mechanical disturbances would affect the crack growth behavior in ferroelectric ceramics. Simplification is achieved by considering only three material constants to account for elastic, piezoelectric and dielectric effects. Cross interaction of electric field (or displacement) with mechanical stress (or strain) is identified with the piezoelectric effect; it occurs only when the pole is aligned normal to the crack. Switching of the pole axis by 90degrees and 180degrees is examined for possible connection with domain switching. Opposing crack growth behavior can be obtained when the specification of mechanical stress sigma(infinity) and electric field E-infinity or (sigma(infinity), E-infinity) is replaced by strain e and electric displacement D-infinity or (epsilon(infinity), D-infinity). Mixed conditions (sigma(infinity),D-infinity) and (epsilon(infinity),E-infinity) are also considered. In general, crack growth is found to be larger when compared to that without the application of electric disturbances. This includes both the electric field and displacement. For the eight possible boundary conditions, crack growth retardation is identified only with (E-y(infinity),sigma(y)(infinity)) for negative E-y(infinity) and (D-y(infinity), epsilon(y)(infinity)) for positive D-y(infinity) while the mechanical conditions sigma(y)(infinity) or epsilon(y)infinity are not changed. Suitable combinations of the elastic, piezoelectric and dielectric material constants could also be made to suppress crack growth. (C) 2002 Published by Elsevier Science Ltd.

Study on the ions' behavior in an electron cyclotron resonance plasma

The energy, velocity, angle distribution of ions in magnetoactive electron cyclotron resonance plasma have been studied with a two-dimension hybrid mode. The dependence of these distribution functions versus position and pressure are discussed. Our simulation results are in good agreement with many experimental measurements. (C) 1997 American Institute of Physics.

Sample-specific behavior in failure models of disordered medial

The concept ''sample-specific'' is suggested to describe the behavior of disordered media close to macroscopic failure. it is pointed out that the transition from universal scaling to sample-specific behavior may be a common phenomenon in failure models of disordered media. The dynamical evolution plays an important role in the transition.

Effects of chloride substitution on the chemical and physical properties and the crystallization behavior in heavy metal fluoride glasses

Effect of the substitutions of chloride for fluoride on the chemical and physical properties and the crystallization behavior in heavy metal fluoride glasses has been investigated. The characteristic temperature of the glass does not changed obviously when the fluoride was taken place by chloride. Compared with samples of being free of ErF3, the doping samples are more inclined to be surface crystallization. Optical basicity in the glass system increases with increasing the negative charge provided by the chloride atoms and the absorption peak red shifted is observed in absorption spectra. XRD measurements show that not a single crystalline phase appears in the heated glass samples, which indicate the substitutions of chloride for fluoride with a variety of crystalline precipitation trends. (c) 2007 Elsevier B.V All rights reserved.

PATTERNS OF SPATIAL-DISPERSION, LOCOMOTION AND FORAGING BEHAVIOR IN 3 GROUPS OF THE YUNNAN SNUB-NOSED LANGUR (RHINOPITHECUS-BIETI)

Aspects of the behaviour of three groups of Yunnan snub-nosed langurs, Rhinopithecus bieti, were observed over the course of three field seasons from 1986 to 1988. The major findings of the study were: (1) The habitats of R. bieti were mainly at heights of 3,600-4,150 m above sea level. (2) Groups were very large, with group sizes ranging from more than 100 to 269 individuals. (3) Spatial dispersion densities ranged from about 27 to 106 m2/individual during sleeping and resting, to feeding dispersions as large as 5,000-15,000 m2. (4) The locomotor repertoire of R. bieti consisted largely of walking, jumping and climbing. On very rare occasions, semibrachiation was observed, but true brachiation was never observed. The locomotor repertoires of juveniles were more diverse than those of subadults or adults. (5) Communication consisted mainly of eye-to-eye contact accompanied by murmurs; while loud calls were heard only rarely. (6) Groups moved between sleeping and feeding sites in single file. It is concluded that R. bieti is a mainly terrestrial species.

Sexual behavior in a one-male unit of Rhinopithecus bieti in captivity

Data regarding the sexual behavior of black-and-white snub-nosed monkeys (Rhinopithecus bieti) were collected in 1998 in a one-male unit in captivity by all-occurrences sampling during the mating season. Before the present study, little was known about the sexual behavior of this species. This study showed that female solicitation is mainly expressed as "prostration plus glancing laterally" (PG) or "sitting plus head moving up and down" (HM), and male solicitation is exhibited by the "grunt bared-teeth display." The mount-to-ejaculation ratio was 5.2 on average, and single-mount ejaculations (SMEs) were observed in only 4.4% of mounts on days with at least one ejaculation. Therefore, the main copulatory pattern of this species is multiple-mount ejaculation (MME). Females initiated 72% of 18 ejaculatory mounts. Females initiated more ejaculatory mounts than non-ejaculatory ones. In general, the patterns of sexual behavior in this species are similar to those reported for other Colobines. (C) 2004 Wiley-Liss, Inc.

MEIOTIC CHROMOSOME BEHAVIOR IN FEMALE INTERSEXES OF ARTIFICIAL TRIPLOID TRANSPARENT-COLORED CRUCIAN CARP

Chromosome behavior in meiosis was studied by air-drying, C-banding and surface-spreading methods in female intersexes of artificial triploid transparent-colored crucian carp (Carassius auratus). Chromosome pairing and contraction were obviously asynchronous. The preferential pairing of two homologous chromosomes was the major pattern of chromosome pairing, and a few triple pairing, repeated pairing, telomer or centromere associating and multiple pairing were also observed in the pachytene cells. The metaphase I cells were mainly composed of univalents, bivalents and trivalents, as well as few of other multivalents, such as tetravalents, pentavalents, hexavalents and heptavalents, were also found in some metaphase I cells. The chromosome elements including uni-, bi-, tri- and other multivalents varied considerably among the metaphase I cells, and the associating patterns of multivalents were also diverse. Some 6 n and 12 n cells, in which premeiotic endomitosis occurred once or twice, were found at the prophase and first metaphase of meiosis, and the pairing and associating patterns were basically similar to that of the triploid cells.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current

An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.