3 resultados para Hatch-Waxman Act

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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According to outdated paradigms humic substances (HS) are considered to be refractory or inert that do not directly interact with aquatic organisms. However, they are taken up and induce biotransformation activities and may act as hormone-like substances. In the present study, we tested whether HS can interfere with endocrine regulation in the amphibian Xenopus laevis. In order to exclude contamination with phyto-hormones, which may occur in environmental isolates, the artificial HS 1500 was applied. The in vivo results showed that HS 1500 causes significant estrogenic effects on X. laevis during its larval development and results of semi-quantitative RT-PCR revealed a marked increase of the estrogenic biomarker estrogen receptor mRNA (ER-mRNA). Furthermore, preliminary RT-PCR results showed that the thyroid-stimulating hormone (TSH beta-mRNA) is enhanced after exposure to HS1500, indicating a weak adverse effect on T3/T4 availability. Hence, HS may have estrogenic and anti-thyroidal effects on aquatic animals, and therefore may influence the structure of aquatic communities and they may be considered environmental signaling chemicals. (c) 2005 Elsevier Ltd. All rights reserved.

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We investigate the development of cross-hatch grid surface morphology in growing mismatched layers and its effect on ordering growth of quantum dots (QDs). For a 60degrees dislocation (MD), the effective part in strain relaxation is the part with the Burgers vector parallel to the film/substrate interface within its b(edge) component; so the surface stress over a MD is asymmetric. When the strained layer is relatively thin, the surface morphology is cross-hatch grid with asymmetric ridges and valleys. When the strained layer is relatively thick, the ridges become nearly symmetrical, and the dislocations and the ridges inclined-aligned. In the following growth of InAs, QDs prefer to nucleate on top of the ridges. By selecting ultra-thin In0.15Ga0.85As layer (50nm) and controlling the QDs layer at just formed QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.