6 resultados para Global manufacturing

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

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对乙烷裂解制造乙烯的非平衡过程进行了分析,为了获得高的乙烯产率,需准确控制裂解停留时间并提高裂解反应温度,探讨了目前工业生产中普遍采用的管式裂解炉的特性及局限,这种管式裂解炉的性能虽己接近完善,但仍不能满足裂解工艺需求,对几种利用激波控制加热方法生产乙烯的发明及其不足进行了评述,提出新颖的反向超声速射流混合加热方法,该方法能满足裂解制造乙烯的要求。

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Using spatially averaged global model, we succeed in obtaining some plasma parameters for a low pressure inductively coupled plasma source of our laboratory. As far as the global balance is concerned, the models can give reasonable results of the parameters, such as the global electron temperature and the ion impacting energy, etc. It is found that the ion flow is hardly affected by the neutral gas pressure. Finally, the magnetic effects are calculated by means of the method. The magnetic field can play an important role to increase plasma density and ion current.

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Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

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Abstract This paper presents a hybrid heuristic{triangle evolution (TE) for global optimization. It is a real coded evolutionary algorithm. As in di®erential evolution (DE), TE targets each individual in current population and attempts to replace it by a new better individual. However, the way of generating new individuals is di®erent. TE generates new individuals in a Nelder- Mead way, while the simplices used in TE is 1 or 2 dimensional. The proposed algorithm is very easy to use and e±cient for global optimization problems with continuous variables. Moreover, it requires only one (explicit) control parameter. Numerical results show that the new algorithm is comparable with DE for low dimensional problems but it outperforms DE for high dimensional problems.

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We propose an integrated algorithm named low dimensional simplex evolution extension (LDSEE) for expensive global optimization in which only a very limited number of function evaluations is allowed. The new algorithm accelerates an existing global optimization, low dimensional simplex evolution (LDSE), by using radial basis function (RBF) interpolation and tabu search. Different from other expensive global optimization methods, LDSEE integrates the RBF interpolation and tabu search with the LDSE algorithm rather than just calling existing global optimization algorithms as subroutines. As a result, it can keep a good balance between the model approximation and the global search. Meanwhile it is self-contained. It does not rely on other GO algorithms and is very easy to use. Numerical results show that it is a competitive alternative for expensive global optimization.