Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 degreesC to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. (C) 2002 American Institute of Physics.

Impedance spectrum measurement in liquid/liquid interface electrochemistry .2. Study on the ion transfer at L/L interface by impedance spectrum technique

In this paper we study the ion transfer across the liquid/liquid interface by impedance spectrum technique in the four - electrode system. We present a method of getting the real interfacial impedance curve from the apparent impedance curve obtained in the four - electrode system. A practical kinetics investigation on the transfer of tetramethylammonium ion at the water/nitrobenzene interface was done with the method to verify the validity of the method. The transfer of tetramethylammonium ion at the W/O interface is really a reversible transfer.