Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3041477]

Interlayer segregation in magnetic multilayers and its influence on exchange coupling

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. X-ray photoelectron spectroscopy shows that Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. While studying Ta/X(X=Bi,Pb,Ag,In)/NiFe/FeMn multilayers, we also find that X atoms segregate to the NiFe/FeMn interface, which results in a decrease of the H-ex. However, a small amount of Bi, Pb, etc. deposited between Cu and pinned NiFe layer for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers can increase H-ex. (C) 2003 American Institute of Physics.

Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. In order to find out the reason, the composition and chemical states at the surface of Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm), and Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) were studied using x-ray photoelectron spectroscopy. The results show that no elements from lower layers float out or segregate to the surface in the first and second samples. However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) multilayers, i.e., Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which causes the exchange coupling field (H-ex) of Ta/NiFe/Cu/NiFe/FeMn/Ta to be weaker than that of Ta/NiFe/FeMn/Ta. (C) 2002 American Institute of Physics.

Influence of Fe3+ on perovskite oxides: La2/3Ca1/3Mn1-xFexO3

The structure and magnetoresistance properties in sintered samples of La-2/3 Ca-1/3 Mn1-x FexO3 (0 less than or equal to x less than or equal to 0.84) are studied by using Mossbauer spectroscopy, XRD and magnetic measurement. There are antiferromagnetic interactions between Fe and its nearest neighbors (Fe, Mn) when 0 less than or equal to x less than or equal to 0.67, which are important factors influencing the double-exchange between Mn3+ and Mn4+, Curie temperature, magnetic moment and GMR. It is suggested that the Mn3+(Fe3+)/Mn4+ system also consists of magnetic clusters with different sizes.

Analysis of the interfaces of [NiFe/Mo](30) and [Fe/Mo](30) multilayers

The interface states of [NiFe/Mo](30) and [Fe/Mo](30) multilayers have been investigated by x-ray small angle reflection and diffuse scattering. Significant interface roughness correlation was observed in both ultrathin [NiFe/Mo](30) and [Fe/Mo](30) multilayers. An uncorrelated roughness of about 27-3.1 Angstrom was revealed in the [NiPe/Mo](30) multilayers, which is explained as originating from a transition layer between the NiFe and the Mo layers. By the technique of diffuse scattering, it is clearly indicated that the interfacial roughness of NiFe/Mo is much smaller than that of Fe/Mo although the lattice mismatch is the same in both multilayers.

Electron tunneling through double magnetic barriers on the surface of a topological insulator

We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.

Structural studies of NixFe100-x/Mo magnetic multilayers by x-ray small-angle reflection and high-angle diffraction

Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

退火对FeMn钉扎自旋阀性质的影响

通过对退火后FeMn钉扎自旋阀磁性的研究表明，真空退火对自旋阀的性质有影响。低于200 ℃的退火能有效的提高钉扎场；退火温度高于200　℃时，自旋阀的钉扎场要下降，其他性能也恶化；在300　℃时，钉扎场降为零，giant magnetoresistance （GMR）现象消失。俄歇电子能谱仪（AES）的结果表明，在自旋阀多层膜中存在着晶界扩散。

Structural and magnetic properties of (PrxSm1-x)Mn2Si2

Crystallographic and magnetic properties of intermetallic compounds (PrxSm1-x) Mn2Si2 (x = 0 similar to 0.80) have been investigated by X-ray powder diffraction, XPS and magnetic measurements. All the compounds crystallize in ThCr2Si2-type structure. Substitution of Pr for Sm leads to the increase of the lattice constants and the transition from antiferromagnetism (AFM) to ferromagnetism (FM). The valence-fluctuation in the compounds was observed and the relation between the change of electron binding energy and magnetic properties was also discussed preliminarily.

Magnetic and magnetotransport properties of intermetallic SmMn2Si2

The magnetic properties of naturally layered intermetallic compound SmMn2Si2 with textured structure have been studied. There exist a ferromagnetic transition at 35 K and two antiferromagnetic transitions at 120 and 230 K. The antiferromagnetic state below 230 K exhibits different magnetoresistance, with a negative magnetoresistance of 3%-4% for current I applied perpendicular to the c axis and with a positive magnetoresistance effect of about 4%-6% for current I parallel to the c axis. The observed magnetoresistance is likely to be related to magnetovolume effects. In the ferromagnetic state, a positive magnetoresistance with a maximum increase of 22% under an applied field of 5 T is observed at 4 K, and both H perpendicular to I and H parallel to I configurations show positive magnetoresistance. (C) 1997 American Institute of Physics.

Longitudinal spin transport in diluted magnetic semiconductor superlattices: The effect of the giant Zeeman splitting

Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic-field region the giant Zeeman splitting plays a dominant role that leads to a large negative magnetoconductivity. In the strong magnetic-field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the s-d exchange interaction between the electron in the conduction band and the magnetic ions. The spin polarization increases rapidly with increasing magnetic field and the longitudinal current becomes spin polarized in strong magnetic field. The effect of spin-disorder scattering on MC is estimated numerically for low magnetic fields and found to be neglectible for our system.

Ballistic Electron Transport In Hybrid Ferromagnet/Two-Dimensional Electron Gas Sandwich Nanostructure: Spin Polarization And Magnetoresistance Effect

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B-z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3041477]

Giant Kerr nonlinearity induced by interacting dark resonances

A scheme for giant enhancement of the Kerr nonlinearity in a four-level system with double dark resonances is proposed. Compared with that generated in a single-dark-resonance system, the Kerr nonlinearity can be enhanced by several orders of magnitude with vanishing linear absorption. We attribute this dramatic enhancement to the interaction of dark resonances. (c) 2005 Optical Society of America.