ON THE FORMATION OF THE SBGA HETEROANTISITE IN METALORGANIC VAPOR-PHASE EPITAXIAL GAAS-SB

Metalorganic vapor-phase epitaxial growth of GaAs doped with isovalent Sb is reported. By increasing the trimethylantimony concentration during growth the total Sb concentration was varied between 1 X 10(17)-1 X 10(19) cm-3. A new deep level defect with an activation energy of the thermal emission rates of E(c) - 0.54 eV is observed. The defect concentration increases with increasing As partial pressure and with increasing Sb doping. It is also found that the EL2 concentration decreases with increasing Sb doping. The new energy level is suggested to be the 0/ + transition of the Sb(Ga) heteroantisite defect. No photocapacitance quenching effect, reflecting a metastable state as seen for EL2 (As(Ga)), is observed for Sb(Ga).

Formation of the Yazi Spring Stream and its significance on tectonics-climate on the northern slope of Kunlun Mountains

IEECAS SKLLQG

Synthesis, molecular structures, and norbornene addition polymerization activity of the neutral nickel catalysts supported by beta-diketiminato [N, N], ketiminato [N, O], and Schiff-Base [N, O] ligands

A series of neutral nickel complexes [Ni(Ph)(PPh3)(N, O)] with Schiff-base ligands (N, O) [N, O = 5-Me-3-tert-Bu-(Ar-N=CH)C6H2O (1, Ar = 2,6-Me2C6H3; 2, Ar = 2,6-i-Pr2C6H3)], [Ni(Ph)(PPh3)(N,O)1, with beta-ketiminato ligands (N, O) [N, O = CH3COCHC=(CH3)N-Ar (3, Ar = 2,6-Me2C6H3; 4, Ar = 2,6-i-Pr2C6H3)] and [Ni(N, N)(PPh3)], and with beta-diketiminato ligands (N, N) [5, N, N = [2,6-i-Pr-2(C6H3)N=C(CH3)](2)CH] have been synthesized and characterized. The molecular structures of complexes 1, 4, and 5 have been confirmed by X-ray single-crystal analyses. Although their ligands have similar structures, complex 4 possesses a structure similar to that of four-coordination nickel with complex 1, while complex 5 reveals a rare three-coordination nickel geometry. These compounds show high catalytic activities of up to 3.16 x 10(7) g PNB mol(-1) Ni h(-1) for the addition polymerization of norbornene in the presence of modified methylaluminoxane (MMAO) as cocatalyst. Catalytic activities, polymer yield, molecular weights, and molecular weight distributions of polyborbornene have been investigated under various reaction conditions.

Characterization and properties of the neutral and doped blends of poly(3-dodecylthiophene) with low-density polyethylene

In this paper, the structures and properties of the neutral and doped blends of poly(3-dodecylthiophene) (P3DDT) with low-density polyethylene (LDPE) were investigated. Wide-angle X-ray diffraction (WAXD), differential scanning calorimetry (DSC), Fourier transform infrared spectra (FTIR), and scanning electron microscopy (SEM) were used to characterize the structures and morphologies of the blends, and conductivity was also measured. It was found that separate crystallizations occur between P3DDT and LDPE. When the amount of P3DDT is small in the blend, it has the effect of a nucleation reagent and has some influence on the crystal structure. After doping, the interaction force between the molecular chains increases, and leads to a more compact packing and a more uniform dispersion in morphology. Through blending, the thermal stability of pure component could be greatly improved, especially when the P3DDT content is 5 wt %. The conductivity measurements indicate that the conductivity increases with the increase of the P3DDT composition and doping time.

Formation of the V center on H-type zeolites with thermal treatment

The effect of thermal treatment on H-MCM-22 and H-ZSM-5 zeolites was investigated using the electron spin resonance technique. A six-line signal (denoted as A, g = 2.048, A = 22. 15 G) was detected on H-MCM-22 after He purging at high temperatures, whose intensities increased with the treating temperature. The same signal was also found on H-ZSM-5 zeolites with different crystal sizes. The paramagnetic center was identified as a V center, namely, a hole of an electron trapped on an oxygen atom bonding to a nearby aluminum atom. These signals appeared only on a dealuminated sample or a sample concomitantly with dealumination. The formation of the hole might involve an electron transferring from the lattice oxygen to a nonframework aluminum species, and the hyperfine splitting is caused by the interaction between the electron hole locating on the p orbit of oxygen and the framework aluminum bonding with the oxygen. The signal disappeared after the sample was exposed to air or oxygen at room temperature. However, the process was reversible. A new set of signals (denoted as B, g(1) = 2.008, g(2) = 2.003, g(3) = 1.9985) was observed after oxygen adsorption on the H-MCM-22 pretreated with He at 973 K or He purging at 973 K on the H-MCM-22 pretreated with oxygen at 813 K, which was attributed to the O- species.

The effects of pre-irradiation on the formation of Si1-xCx alloys

Carbon ions were implanted into crystal Si to a concentration of (0.6-1.5)at% at room temperature. Some samples were pre-irradiated with S-29(i)+ ions, while others were not pre-irradiated. Then the two kinds of samples were implanted with C-12(+) ions simultaneously, and Si1-xCx alloys were grown by solid phase epitaxy with high-temperature annealing. The effects of preirradiation on the formation of Si1-xCx alloys were studied. If the dose of implanted C ion was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation, and then it was difficult for Si1-xCx alloys to form after annealine, at 950 degreesC. Pre-irradiation was advantageous for Si1-xCx alloy formation. With the increase of C ion dose, the damage produced by C ions increased. Pre-irradiation was unfavorable for Si1-xCx, alloy formation. If the implanted C concentration was higher than that for solid phase epitaxy solution, only part of the implanted C atoms form Si1-xCx alloys and the effects of pre-irradiation could be neglected. As the annealing temperature was increased to 1050 degreesC, Si1-xCx alloys in both pre-irradiated and unpreirradiated samples of low C concentration remained, whereas most part of Si1-xCx alloys in samples with high C concentration vanished.

Ab initio calculations for the neutral and charged O vacancy in sapphire

The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al2O3 are studied by means of supercell total-energy calculations using a first-principles method based on density-functional theory. The supercell model with 120 atoms in a hexagonal lattice is sufficiently large to give realistic results for an isolated single vacancy (square). Self-consistent calculations are performed for each assumed configuration of lattice relaxation involving the nearest-neighbor Al atoms and the next-nearest-neighbor O atoms of the vacancy site. Total-energy data thus accumulated are used to construct an energy hypersurface. A theoretical zero-temperature vacancy formation energy of 5.83 eV is obtained. Our results show a large relaxation of Al (O) atoms away from the vacancy site by about 16% (8%) of the original Al-square (O-square) distances. The relaxation of the neighboring Al atoms has a much weaker energy dependence than the O atoms. The O vacancy introduces a deep and doubly occupied defect level, or an F center in the gap, and three unoccupied defect levels near the conduction band edge, the positions of the latter are sensitive to the degree of relaxation. The defect state wave functions are found to be not so localized, but extend up to the boundary of the supercell. Defect-induced levels are also found in the valence-band region below the O 2s and the O 2p bands. Also investigated is the case of a singly occupied defect level (an F+ center). This is done by reducing both the total number of electrons in the supercell and the background positive charge by one electron in the self-consistent electronic structure calculations. The optical transitions between the occupied and excited states of the: F and F+ centers are also investigated and found to be anisotropic in agreement with optical data.

Hydrogen-deuterium exchange reactions of cis- and trans-cyclopropane derivatives with D2O and CD3OD in the gas phase

Gas-phase hydrogen-deuterium (H/D) exchange reactions involving four isomeric cyclopropane derivatives were investigated under chemical ionization (CI) conditions, using D2O and CD3OD as reagent gases. There are abundant ions at [M + 1](+), [M + 2](+) and [M + 3](+) in the D2O and CD3OD positive-ion CI mass spectra of the two isomer pairs 1, 2 and 3, 4, Their CI mass spectra are identical with each pair, and so are the collision-induced dissociation (CID) spectra of ions [M + 1](+), [M + 2](+) and [M + 3](+) of each of the two isomer pairs. The CID spectra of [M + 1](+) ions indicate that they have common D/H exchange reactions within each pair, which take place between molecular ions and deuterium-labeling reagents to form the [M - H + D](+) ions. Those of their [M + 2](+) ions show that they have common D/H exchange reactions within each pair, which form the [M-d1 + H](+) ions. Those of their [M + 3](+) ions show that they have common D/H exchange reactions within each pair, which take place between the [M-d1] and deuterium-labeling reagents to produce [Md-2 + H](+) for the isomer pair 1, 2 and [M-d1 + D](+) for the Isomer pair 3, 4. The number and position, and active order of the active hydrogen atoms of the isomer pairs 1, 2 and 3, 4 were determined. Copyright (C) 2000 John Wiley & Sons, Ltd.