High-frequency characterization of packaging network in to-can photodiode modules

A simple method for analyzing the effects of TO packaging network on the high-frequency response of photodiode modules is presented. This method is established based on the relations of the scattering parameters of the packaging network, photodiode chip, and module. It is shown that the results obtained by this method agree well with those obtained by the conventional comparison method. The proposed method is much more convenient since only the electrical domain measurements are required. (C) 2008 Wiley Periodicals, Inc.

Characterization of parasitics in TO-packaged high-speed laser modules

An elaborate analysis of the parasitic network of high-speed through-hole packaging (TO)-type laser modules is presented using a small-signal equivalent circuit model. The intrinsic laser diode is obtained using the optical modulation technique, and is embedded into the model as a separate component. Three step-by-step measurements are made for determining the packaging parasitic network, including the test fixture, TO header, submount, bonding wire, and parasitics of the laser chip. A good agreement between simulated and measured results confirms the validation and accuracy of the characterization procedures. Furthermore, several key parasitic elements are found based on the simulation of the high-frequency responses of the packaged devices. It is expected that the 3-dB bandwidth of 12 GHz or more of the low-cost TO packaged laser module may be achieved using the proposed optimization method.

Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407

Various high-speed laser modules are fabricated by TO-Packaged processes, such as FP laser modules, DFB laser modules, and VCSEL modules. Furthermore,, the resonance among the circuit elements provides an approach to compensating the TO packaging parasitics, and improving the frequency response of the devices. The detailed equivalent circuit model is established to investigate both the laser diode and packaging comprehensively. The small-signal modulation bandwidths of the TO packaged FP laser, DFB laser and the VCSEL modules are more than 10, 9.7 and 8 GHz, respectively.

Poly(vinylidene fluoride-hexafluoropropylene)/organo-montmorillonite clays nanocomposite lithium polymer electrolytes

Polymer-clay nanocomposite (PCN) materials were prepared by intercalation of an alkyl-ammonium ion spacing/coupling agent and a polymer between the planar layers of a swellable-layered material, such as montmorillonite (MMT). The nanocomposite lithium polymer electrolytes comprising such PCN materials and/or a dielectric solution (propylene carbonate) were prepared and discussed. The chemical composition of the nanocomposite materials was determined with X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy, which revealed that the alkyl-ammonium ion successfully intercalated the layer of MMT clay, and thus copolymer poly(vinylidene fluoride-hexafluoropropylene) entered the galleries of montmorillonite clay. Cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were used to investigate the electrochemical properties of the lithium polymer electrolyte. Equivalent circuits were proposed to fit the EIS data successfully, and the significant contribution from MMT was thus identified. The resulting polymer electrolytes show high ionic conductivity up to 10(-3) S cm(-1) after felling with propylene carbonate.

Studies on the room temperature conductivity of PEO-LiClO4-Al2O3 composite polymer electrolyte

A composite polymer electrolyte of Polyethylene oxide (PEO)-LiClO4 containing fine Al2O3 particles was studied by using differential scanning calorimetry, infrared spectroscopy and electrochemical impedance spectroscopy. Compared with the polymer electrolyte without Al2O3 particles, the glass transition temperature and the degree of crystallinity were decreased, and the room temperature conductivity of PEO-LiClO4-Al2O3 composite polymer electrolyte was considerably enhanced. Moreover, the equivalent circuits and the effect of dc potential on impedance spectroscopy were discussed.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology. (C) 2009 Optical Society of America

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

A meso elastoplastic constitutive model for polycrystalline metals based on equivalent slip systems with latent hardening

A meso material model for polycrystalline metals is proposed, in which the tiny slip systems distributing randomly between crystal slices in micro-grains or on grain boundaries are replaced by macro equivalent slip systems determined by the work-conjugate principle. The elastoplastic constitutive equation of this model is formulated for the active hardening, latent hardening and Bauschinger effect to predict macro elastoplastic stress-strain responses of polycrystalline metals under complex loading conditions. The influence of the material property parameters on size and shape of the subsequent yield surfaces is numerically investigated to demonstrate the fundamental features of the proposed material model. The derived constitutive equation is proved accurate and efficient in numerical analysis. Compared with the self-consistent theories with crystal grains as their basic components, the present theory is much simpler in mathematical treatment.

Equivalent Model Of Expansion Of Cement Mortar Under Sulphate Erosion

The expansion property of cement mortar under the attack of sulfate ions is studied by experimental and theoretical methods. First, cement mortars are fabricated with the ratio of water to cement of 0.4, 0.6, and 0.8. Secondly, the expansion of specimen immerged in sulphate solution is measured at different times. Thirdly, a theoretical model of expansion of cement mortar under sulphate erosion is suggested by virtue of represent volume element method. In this model, the damage evolution due to the interaction between delayed ettringite and cement mortar is taken into account. Finally, the numerical calculation is performed. The numerical and experimental results indicate that the model perfectly describes the expansion of the cement mortar.

EQUIVALENT MODEL OF EXPANSION OF CEMENT MORTAR UNDER SULPHATE EROSION

The expansion property of cement mortar under the attack of sulfate ions is studied by experimental and theoretical methods. First, cement mortars are fabricated with the ratio of water to cement of 0.4, 0.6, and 0.8. Secondly, the expansion of specimen immerged in sulphate solution is measured at different times. Thirdly, a theoretical model of expansion of cement mortar under sulphate erosion is suggested by virtue of represent volume element method. In this model, the damage evolution due to the interaction between delayed ettringite and cement mortar is taken into account. Finally, the numerical calculation is performed. The numerical and experimental results indicate that the model perfectly describes the expansion of the cement mortar.

Application of sample-and-hold circuits in the laser frequency-shifting

A new method of frequency-shifting for a diode laser is realized. Using a sample-and-hold circuit, the error signal can be held by the circuit during frequency shifting. It can avoid the restraint of locking or even lock-losing caused by the servo circuit when we input a step-up voltage into piezoelectric transition (PZT) to achieve laser frequency-shifting.

Disconnection of the hippocampal-prefrontal cortical circuits impairs spatial working memory performance in rats

There is a unidirectional, ipsilateral and monosynaptic projection from the hippocampus to the prefrontal cortex. The cognitive function of hippocampal-prefrontal cortical circuit is not well established. In this paper, we use muscimol treated rats to inv

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures

For realization of hexagonal BDD-based digital systems, active and sequential circuits including inverters, flip flops and ring oscillators are designed and fabricated on GaAs-based hexagonal nanowire networks controlled by Schottky wrap gates (WPGs), and their operations are characterized. Fabricated inverters show comparatively high transfer gain of more than 10. Clear and correct operation of hexagonal set-reset flip flops (SR-FFs) is obtained at room temperature. Fabricated hexagonal D-type flip flop (D-FF) circuits integrating twelve WPG field effect transistors (FETs) show capturing input signal by triggering although the output swing is small. Oscillatory output is successfully obtained in a fabricated 7-stage hexagonal ring oscillator. Obtained results confirm that a good possibility to realize practical digital systems can be implemented by the present circuit approach.

Whispering-gallery microcavity semiconductor lasers suitable for photonic integrated circuits and optical interconnects

The characteristics of whispering-gallery-like modes in the equilateral triangle and square microresonators are introduced, including directional emission triangle and square microlasers connected to an output waveguide. We propose a photonic interconnect scheme by connecting two directional emission microlasers with an optical waveguide on silicon integrated circuit chip. The measurement indicates that the triangle microlasers can work as a resonance enhanced photodetector for optical interconnect.