Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

~(179)Au的1/2[660](πi_(13/2))转动带

利用能量为 16 4— 180MeV的 3 5Cl束流 ,通过重离子核反应 14 9Sm(3 5Cl ,5n)研究了 179Au的高自旋态能级结构 .实验进行了γ射线的激发函数、X γ和γ γ t符合测量 .基于对实验测量结果的分析 ,首次建立了 179Au的 1 2 [6 6 0 ](πi13 2 )转动带 .结合已有的实验数据 ,着重讨论了奇AAu核中1 2 [6 6 0 ](πi13 2 )转动带的带头激发能随中子数的变化