RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature

The intermittent illumination treatment by white light at elevated temperature is proved to be a convenient and efficient method for the improvement of the stability of hydrogenated amorphous silicon (a-Si:H) films. The effect of the treatment on electrical properties, light-induced degradation, and gap states of undoped a-Si:H films has been investigated in detail. With the increase of cycling number, the dark- as well as photo-conductivities in annealed state and light-soaked state approach each other, presenting an unique irreversible effect. The stabilization and ordering processes by the present treatment can not be achieved merely by annealing under the same conditions. It is shown that the treatment proposed here results in a shift to higher values of the energy barriers between defects and their precursors, and hence an improved stability of a-Si:H films. (C) 1996 American Institute of Physics.

Microstructure and Elevated Temperature Properties of Die-cast AZ91-xNd magnesium alloy

The effect of Nd addition on the microstructure and mechanical properties of a die-cast AZ91 alloy was investigated in the present work. The results show that the die-cast AZ91 alloy is composed of alpha-Mg matrix and gamma-Mg17Al12 phase. Nd addition into the AZ91 alloy leads to the formation of rare earth containing intermetallic phase. Al4Nd phase forms when Nd content is less than or equal to 1.0 wt.%. Al2Nd phase appears simultaneously when Nd content reaches to 3.0 wt.%.

THE FRACTURE-BEHAVIOR OF PHENOLPHTHALEIN POLYETHER ETHER KETONE AT ELEVATED-TEMPERATURE FOR LONG TERMS

The fracture behavior of phenolphthalein polyether-ether ketone (PEK-C) affected by physical aging at 200 degrees C was studied by tensile experiments, scanning electron microscopy, and differential scanning calorimetry observations. The ductile-brittle fracture transition (DBT) caused by physical aging can be considered as a competition between fracture mechanisms of crazing and shear yielding. The aging time required for the DBT is found to be around 400 h, based on the morphological studies and tensile experiments. The shear yielding component of the mechanical deformation could erase the aging effect, thus a deaging phenomenon occurs. We found that the deaging phenomenon has an intrinsic relationship with the extent of aging in the specimen and as a result of the fracture behavior. (C) 1995 John Wiley and Sons, Inc.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Cultivation of the brown alga Sargassum horneri: sexual reproduction and seedling production in tank culture under reduced solar irradiance in ambient temperature

As a large conspicuous intertidal brown alga, individuals of Sargassum horneri can reach a length of more than 7 m with a fresh weight of 3 kg along the coasts of the Eastern China Sea. The biomass of this alga as a vital component in coastal water ecology has been well documented. In recent years, a steady disappearance of the algal biomass along the once densely populated coastal areas of the Eastern China Sea has drawn attention in China. Efforts have been made to reconstruct the subtidal algal flora or even to grow the alga by use of long-lines. As part of the efforts to establish an efficient technique for producing seedlings of S. horneri, in this investigation a series of culture experiments were carried out in indoor raceway and rectangular tanks under reduced solar irradiance at ambient temperature in 2007-2008. The investigation demonstrated that: (1) sexual reproduction of S. horneri could be accelerated in elevated temperature and light climates, at least 3 months earlier than in the wild; (2) eggs of S. horneri had the potential to be fertilized up to 48 h, much longer than that of known related species; (3) suspension and fixed culture methods were both effective in growing the seedlings to the long-line cultivation stage; and (4) the life cycle of S. horneri in culture could be shortened to 4.5 months, thus establishing this alga as an appropriate model for investigating sexual reproduction in dieocious species of this genus.

Effects of acute temperature or salinity stress on the immune response in sea cucumber, Apostichopus japonicus

Invertebrates are increasingly raised in mariculture, where it is important to monitor immune function and to minimize stresses that could suppress immunity. The activities of phagocytosis, superoxide dismutase (SOD), catalase (CAT), myeloperoxiclase (MPO), and lysozyme (LSZ) were measured to evaluate the immune capacities of the sea cucumber, Apostichopus japonicus, to acute temperature changes (from 12 degrees C to 0 degrees C, 8 degrees C, 16 degrees C, 24 degrees C, and 32 degrees C for 72 h) and salinity changes (from 30 parts per thousand to 20 parts per thousand, 25 parts per thousand, and 35 parts per thousand for 72 h) in the laboratory. Phagocytosis was significantly affected by temperature increases in 3 h, and by salinity (25 parts per thousand and 35 parts per thousand) changes in 1 h. SOD activities decreased significantly in 0.5 h to 6 h samples at 24 degrees C. At 32 degrees C, SOD activities decreased significantly in 0.5 h and 1 h exposures, and obviously increased for 12 h exposure. CAT activities decreased significantly at 24 degrees C for 0.5 h exposure, and increased significantly at 32 degrees C in 3 h to 12 h exposures. Activities of MPO increased significantly at 0 degrees C in 0.5 h to 6 In exposures and at 8 degrees C for 1 h. By contrast, activities of MPO decreased significantly in 24 degrees C and 32 degrees C treatments. In elevated-temperature treatments, activities of LSZ increased significantly except at 32 degrees C for 6 h to 12 h exposures. SOD activity was significantly affected by salinity change. CAT activity decreased significantly after only 1 h exposure to salinity of 20 parts per thousand.. Activities of MPO and LSZ showed that A. japonicus tolerates limited salinity stress. High-temperature stress had a much greater effect on the immune capacities of A. japonicus than did low-temperature and salinity stresses. Crown Copyright (C) 2008 Published by Elsevier Inc. All rights reserved.

Investigation on Laser Cladding MOSi2 Powder on Steel

The feasibility of the fabrication of coatings for elevated-temperature structural applications by laser cladding MoSi2 powder on steel was investigated. A dense and crack-free fine coating, well-bonded with the substrate has been obtained by this technique. This coating consists of FeMoSi, Fe2Si and a small amount of Mo5Si3 due to dilution of the substrate in the coating. The microstruelure of the coating is characterized of typical fine dendrites. The dendrites are composed of FeMoSi primary phase, and the interdendritic areas are two eutectic phases of FeMoSi and Fe2Si. The hardness of the coating reaches 845 Hv(0.5), 3.7 times larger than that of the steel substrate (180Hv(0.5)).

A high throughput Nile red method for quantitative measurement of neutral lipids in microalgae

Isolation of high neutral lipid-containing microalgae is key to the commercial success of microalgae-based biofuel production. The Nile red fluorescence method has been successfully applied to the determination of lipids in certain microalgae, but has been unsuccessful in many others, particularly those with thick, rigid cell walls that prevent the penetration of the fluorescence dye. The conventional "one sample at a time" method was also time-consuming. In this study, the solvent dimethyl sulfoxide (DMSO) was introduced to microalgal samples as the stain carrier at an elevated temperature. The cellular neutral lipids were determined and quantified using a 96-well plate on a fluorescence spectrophotometer with an excitation wavelength of 530 nm and an emission wavelength of 575 run. An optimized procedure yielded a high correlation coefficient (R-2 = 0.998) with the lipid standard triolein and repeated measurements of replicates. Application of the improved method to several green algal strains gave very reproducible results with relative standard errors of 8.5%, 3.9% and 8.6%, 4.5% for repeatability and reproducibility at two concentration levels (2.0 mu g/mL and 20 mu g/mL), respectively. Moreover, the detection and quantification limits of the improved Nile red staining method were 0.8 mu g/mL and 2.0 mu g/mL for the neutral lipid standard triolein, respectively. The modified method and a conventional gravimetric determination method provided similar results on replicate samples. The 96-well plate-based Nile red method can be used as a high throughput technique for rapid screening of a broader spectrum of naturally-occurring and genetically-modified algal strains and mutants for high neutral lipid/oil production. (C) 2009 Published by Elsevier B.V.

Determination of the absorption for incident light propagating parallel through the guest-host polymer film waveguide

Guest host polymer thin films of polymethyl methacrylate (PMMA) incorporated with (4'-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were fabricated by spin coating and then poled by the method of corona-onset poling at elevated temperature. The absorption mechanism of the polymeric film, which is very important for the optical transmission losses and directly relates to the orientation of chromophore NAEC in polymer PMMA, was investigated in detail. From the UV-visible absorption spectra for NAEC/PMMA film before and after being poled, we determined the change of absorption coefficient kappa with the wavelength and approximately calculated the maximum absorption A(parallel tomax) as 3.46 for incident light propagating parallel through the film, i.e. the ordinary polarized light, which cannot be directly measured in the spectro photometer. (C) 2002 Elsevier Science Ltd. All rights reserved.

Nonlinear optical properties and thermal stability of the poled polymer NTAB/PEK-c

Films of high glass' transition temperature polymer polyetherketone doped with chromophore 2,2'[4-[(5-nitro-2-thiazolyl)azophenyl]-amino]-bisethanol NTAB) were prepared, poled by the corona-onset poling setup which includes a grid voltage making the surface-charge distribution uniform at elevated temperature. The thickness of the films was measured by the Model 2010 Prism Coupler system. Second harmonic generation d(33) was measured by the second harmonic generation method, and the d33 is 38.12 pm/V at 1064 nm under the absorption correction. The nonlinear optical activity maintains is 80% of its initial value. (C) 2002 Elsevier Science B.V. All rights reserved.

Optical properties of NAEC-PMMA nonlinear polymeric thin film

Novel guest nonlinear optical (NLO) chromophore molecules (4-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were doped in poly (methyl methacrylate) (PMMA) host with a concentration of approximately 15% by weight. For a useful macroscopic electro-optic (EO) effect, these NLO molecules NAEC were arranged in a noncentrosymmetric structure in the host polymer by corona-onset poling at elevated temperature (COPET). For applying NAEC-PMMA polymer in optical devices such as EO switch, its optical properties have been investigated. The UV/Visible absorption spectra for the unpoled and poled polymer film were determined. The refractive index of the film was also determined from measurements of the coupling angles with the reflective intensity at 632.8 nm wavelength. Using the simple reflection technique, the EO coefficient 33 value was measured as 60 pm/V at 632.8 nm wavelength. The second-order nonlinear coefficient d(33) was characterized by the second-harmonic-generation (SHG) experimental setup and the calculated d(33) value reached 18.4 pm/V at 1064 nm wavelength. The relation between the second-order nonlinear coefficients d(33) and d(13) for the poled polymer film was also discussed in detail and the ratio d(33)/d(13) value was obtained as 3.3. (C) 2002 Kluwer Academic Publishers.

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

We investigated the temperature dependence (10-250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. (C) 2001 American Institute of Physics.