Multifunctional metallophosphors with anti-triplet–triplet annihilation properties for solution-processable electroluminescent devices

With the goal to provide organometallic triplet emitters with good hole-injection/hole-transporting properties, highly amorphous character for simple solution-processed organic light-emitting diodes, and negligible triplet-triplet (T-T) annihilation, a series of new phosphorescent cyclometalated Ir-III and Pt-II complexes with triphenylamine-anchored fluorenylpyridine dendritic ligands were synthesized and characterized. The photophysical, thermal, electrochemical and electroluminescent properties of these molecules are reported.

Mechanisms of efficiency enhancement in the doped electroluminescent devices based on a europium complex

In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1, 10-phenanthroline) doped 4,4'-N,N'-dicarbazole- biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)(3)phen molecules, thus enhancing the EL efficiency.

Efficient organic electroluminescent devices based on an organosamarium complex

Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)

Carbazole-based hole-transporting materials for electroluminescent devices

Two kinds of carbazole-based molecules connected with diphenylamine and carbazole are synthesized by modified Ullmann reaction. Comparative study on their thermal stability, redox behavior, hole injection and transport properties are present. The results demonstrate that the carbazole-based molecules are very promising hole-transporting materials for electroluminescent devices.

Effects of the morphologies and structures of light-emitting layers on the performance of organic electroluminescent devices

Organic electroluminescent devices with a structure of ITO/ploy (9-vinylcarbazole)/tris (8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag are fabricated at different substrate temperatures (77, 298, and 438 K) during Alq3 deposition. It is found that the surface morphologies of Alq3 thin films greatly affect the I-V characteristics of the devices by the contact area between metal cathode and light-emitting layer. There is an increase in the luminous efficiency of the devices in the order 77 K < 298 K < 438 K. We attribute this trend to different structures of Alq3 thin films. (C) 2001 American Institute of Physics.

Bright green organic electroluminescent devices based on a novel thermally stable terbium complex

A navel thermally stable terbium carboxylate complex, Tb(MTP)(3)(phen) (MTP=monotetradecyl phthalate, phen=1,10-phehanthroline), was synthesized and characterized. The device structure of glass substrate/indium-tin-oxide/poly(p-phenylenevinylene) (PPV)/poly (N-vinycarbazole) (PVK):Tb(MTP)(3)(phen): 1,3,4-oxadizole derivative (PBD)/tris(8-hydroxyquinoline) (Alq(3))/aluminum (Al) was employed to study the electroluminescent properties of Tb(MTP)(3)(phen). A green emission with extremely sharp spectral band of less than 10 nm at 544 nm peak wavelength was observed. A maximum luminance of 152 cd/m(2) and an external quantum efficiency of 0.017% were achieved at a drive voltage of 24 V. A possible mechanism of energy transfer based on the polymer doped with lanthanide organic complex was also proposed.

Bright red organic electroluminescent devices based on a soluble rare earth complex Eu(TTA)(3) Phen

An Electroluminescent device with PVK film doped with Eu(TTA)(3) Phen and PBD was fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK : Eu(TTA)3 Phen : PBD/Alq(3)/Al was employed. A sharply red electroluminescence with a maximum luminance of 56. 8 cd/m(2) at 48 V was achieved.

Electroluminescent devices based on monohexadecyl phthalate terbium

Electroluminescent devices with PVK film doped with monohexadecyl phthalate terbium and PBD were fabricated. The device structure of glass substrate/ITO/PPV/PVK:Tb(MHP)(3):PBD/Alq(3)/Al was employed. The emissive layer was formed by a spin-casting technique. The EL cells exhibited characteristic emission of terbium ions with a maximum luminance of 74 cd/m(2) at 18 V. (C) 1998 Elsevier Science S.A. All rights reserved.

Organic electroluminescent devices using rare earth complex Eu(DBM)(3) as an emitter

Eu3+ narrow band emitting EL device with PPV, Alq(3) as hole and electron transportation layers has been prepared. The emitting layer, which consists of PVK, Eu(DBM)(3) and PBD is formed by spin-casting method. A maximum luminance of 52cd.m(-2) is achieved from the device.

Bright red electroluminescent devices based on a soluble lanthanide complex Eu(DBM)(3)(phen)

Electroluminescent devices with PVK film doped with Eu(DBM)(3)(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)(3)-(phen):PBD/Alq(3)/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m(2) was achieved at 42 V.

Bright blue electroluminescent devices utilizing poly (N-vinylcarbazole) doped with fluorescent dye

Bright blue electroluminescent devices have been fabricated using poly (N-vinylcarbazole) (PVK) doped with perylene as the emissive layer, poly(p-phenylenevinylene) (PPV) as the hole-transporting layer, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), tris(8-hydroxyquinoline)aluminum (Alq(3)) as the electron-transporting layer, and Al as the cathode. A luminance of 700 cd/m(2) and a luminescent efficiency of 0.8% are achieved at a drive voltage of 36 V. In the experiment, it is found that the introduction of electron-transporting layer PBD has a great effect on the emissive color of the electroluminescent devices prepared by PVK doped with perylene. Yellow-green emission is observed from the device structure of glass substrate/indium-tin-oxide/PVK:perylene/Al. The possible emissive mechanisms are given. The effect of the transporting layer on the electroluminescence is also discussed. (C) 1997 Elsevier Science S.A.

Solution-processable highly efficient yellow- and red-emitting phosphorescent organic light emitting devices from a small molecule bipolar host and iridium complexes

A bipolar transport compound, 2,5-bis(4-(9-(2-ethylhexyl)-9H-carbazol-3-yl) phenyl)-1,3,4-oxadiazole (CzOXD), incorporating both electron-and hole-transport functionalities, was synthesized and fully characterized by H-1 NMR, C-13 NMR, elemental analysis and mass spectrometry. Its thermal, electrochemical, electronic absorption and photoluminescent properties were studied

Change of the dominant luminescent mechanism with increasing current density in molecularly doped organic light-emitting devices

We have fabricated and measured a series of electroluminescent devices with the structure of ITO/TPD/Eu(TTA)(3)phen (x):CBP/BCP/ ALQ/LiF/Al, where x is the weight percentage of Eu(TTA)3phen (from 0% to 6%). At very low current density, carrier trapping is the dominant luminescent mechanism and the 4% doped device shows the highest electroluminescence (EL) efficiency among all these devices. With increasing current density, Forster energy transfer participates in EL process. At the current density of 10.0 and 80.0mA/ cm(2), 2% and 3% doped devices show the highest EL efficiency, respectively. From analysis of the EL spectra and the EL efficiency-current density characteristics, we found that the EL efficiency is manipulated by Forster energy transfer efficiency at high current density. So we suggest that the dominant luminescent mechanism changes gradually from carrier trapping to Forster energy transfer with increasing current density. Moreover, the conversion of dominant EL mechanism was suspected to be partly responsible for the EL efficiency roll-off because of the lower EL quantum efficiency of Forster energy transfer compared with carrier trapping.

Improved electron injection in organic light-emitting devices with a lithium acetylacetonate [Li(acac)]/aluminium bilayer cathode

Lithium acetylacetonate [Li(acac)] covered with aluminium was used as an efficient electron injection layer in organic light-emitting devices (OLEDs) consisting of NPB as the hole transport layer and Alq(3) as the electron transport and light emitting layer, resulting in lower turn- on voltage and increased current efficiency. The turn- on voltage (the voltage at a luminance of 1 cd m(-2)) was decreased from 5.5 V for the LiF/Al and 4.4 V for Ca/Al to 4.0 V for Li(acac)/Al, and the device current efficiency was enhanced from 4.71 and 5.2 to 7.0 cd A(-1). The performance tolerance to the layer thickness of Li(acac) is also better than that of the device with LiF. LiF can only be used when deposited as an ultra- thin layer because of its highly insulating nature, while the Li(acac) can be as thick as 5 nm without significantly affecting the EL performance. We suppose that the free lithium released from Li(acac) improves the electron injection when Li(acac) is covered with an Al cathode.