31 resultados para Electric discharges through gases

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Through floating catalyst chemical vapour deposition(CVD) method, well-aligned isolated single-walled carbon nanotubes (SWCNTs) and their bundles were deposited on the metal electrodes patterned on the SiO2/Si surface under ac electric fields at relatively low temperature(280 degrees C). It was indicated that SWCNTs were effectively aligned under ac electric fields after they had just grown in the furnace. The time for a SWCNT to be aligned in the electric field and the effect of gas flow were estimated. Polarized Raman scattering was performed to characterize the aligned structure of SWCNTs. This method would be very useful for the controlled fabrication and preparation of SWCNTs in practical applications.

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Long-term potentiation (LTP) and long-term depression (LTD) of the excitatory synaptic inputs plasticity in the hippocampus is believed to underlie certain types of learning and memory. Especially, stressful experiences, well known to produce long-lasting strong memories of the event themselves, enable LTD by low frequency stimulation (LFS, 3 Hz) but block LTP induction by high frequency stimulation (HFS, 200 Hz). However, it is unknown whether stress-affected synaptic plasticity has an impact on the output plasticity. Thus, we have simultaneously studied the effects of stress on synaptic plasticity and neuronal output in the hippocampal CA1 region of anesthetized Wistar rats. Our results revealed that stress increased basal power spectrum of the evoked synchronized-spikes and enabled LTD induction by LFS. The induction of stress-facilitated LTD but not LFS induced persistent decreases of the power spectrum of the synchronized-spikes and the frequency of the spontaneous unitary discharges; However, HFS induced UP in non-stressed animals and increased the power spectrum of the synchronized-spikes, without affecting the frequency of the spontaneous unitary discharges, but HFS failed to induce UP in stressed animals without affecting the power spectrum of the synchronized-spikes and the frequency of the spontaneous unitary discharges. These observations that stress-facilitated LTD induces the output plasticity through the synchronized-spikes and spontaneous unitary discharges suggest that these types of stress-related plasticity may play significant roles in distribution, amplification and integration of encoded information to other brain structures under stressful conditions. (C) 2004 Elsevier Ireland Ltd and The Japan Neuroscience Society. All rights reserved.

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The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

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We have conducted numerical studies of ballistic electron transport in a semiconductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.

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The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

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It is found that there is a linear relationship between log P-w, and the parameter term V-f/0.5 E(coh) [1+(delta(w) - delta(p))(2)/delta(p)(2), from the water permeability (P-w) data of 21 polymers covering 4 orders of magnitude. This correlation may be useful in choosing membrane materials for dehumidification of gases.

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Water vapor absorption and desorption by poly (phenylene oxide) (PPO) and sulfonated PPO (SPPO) membranes were studied at a constant temperature of 30-degrees-C and over a broad range of water activity (0.05 less-than-or-equal-to a < 0.8) by the weighing

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An efficient method for solving the spatially inhomogeneous Boltzmann equation in a two-term approximation for low-pressure inductively coupled plasmas has been developed. The electron distribution function (EDF), a function of total electron energy and two spatial coordinates, is found self-consistently with the static space-charge potential which is computed from a 2D fluid model, and the rf electric field profile which is calculated from the Maxwell equations. The EDF and the spatial distributions of the electron density, potential, temperature, ionization rate, and the inductive electric field are calculated and discussed. (C) 1996 American Institute of Physics.

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A hot particle jet is induced as a laser pulse from a free oscillated Nd:YAG laser focused on a coal target. The particle jet successfully initiates combustion in a premixed combustible gas consisting of hydrogen, oxygen, and air. The experiment reveals that the ionization of the particle jet is enhanced during the laser pulse. This characteristic is attributed to the electron cascade process and the ionization of the particles or molecules of the target. The initial free electrons, which are ablated from the coal target, are accelerated by the laser pulse through the inverse Bremsstrahlung process and then collide with the neutrals in the jet, causing the latter to be ionized.

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We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell-Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.

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The effect of the Coulomb interaction on the energy spectrum and anisotropic distribution of two electron states in a quantum ring in the presence of Rashba spin-orbit interaction (RSOI) and Dresselhaus SOI (DSOI) is investigated in the presence of a perpendicular magnetic field. We find that the interplay between the RSOI and DSOI makes the single quantum ring behaves like a laterally coupled quantum dot and the interdot coupling can be tuned by changing the strengths of the SOIs. The interplay can lead to singlet-triplet state mixing and anticrossing behavior when the singlet and triplet states meet with increasing magnetic field. The two electron ground state displays a bar-bell-like spatial anisotropic distribution in a quantum ring at a specific crystallographic direction, i.e., [110] or [1 (1) over bar0], which can be switched by reversing the direction of the perpendicular electric field. The ground state exhibits a singlet-triplet state transition with increasing magnetic field and strengths of RSOI and DSOI. An anisotropic electron distribution is predicted which can be detected through the measurement of its optical properties.

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In this paper we study a single electron tunneling through a vertically stacked self-assembled quantum disks structure using a transfer matrix technique in the framework of effective mass approximation. In the disks, the electron is confined both laterally and vertically; we separate the motion in the vertical and lateral directions within the adiabatic approximation and treat the energy levels of the latter as an effective confining potential. The influence of a constant applied electric field is taken into account using an exact Airy-function formalism and the current density is calculated at zero temperature. By increasing the widths of the barriers, we find the peaks of the current density shift toward lower voltage region; meanwhile, they can become even sharper. (C) 2004 Elsevier Ltd. All rights reserved.

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We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.

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The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-barrier structure is studied including the k(3) Dresselhaus spin orbit coupling is solved by the time-dependent Schrodinger equation with a developed method for the finite-difference relaxation. The resonant peak and quasibound level lifetime are determined by the in-plane wave vector and the applied electric field. The buildup time and decay lifetime of resonant probability amplitude are different for the spin-down and spin-up electrons due to the Dresselhaus spin-orbit coupling. Further investigation shows that the steady spin-polarization in both the well and collector regions has been obtained in the time domain. (C) 2007 American Institute of Physics.