A moored underwater energy conservation system for profiling measurement

There is a need to obtain the hydrologic data including ocean current, wave, temperature and so on in the South China Sea. A new profiling instrument which does not suffer from the damage due to nature forces or incidents caused by passing ships, is under development to acquire data from this area. This device is based on a taut single point mid-water mooring system. It incorporates a small, instrumented vertically profiling float attached via an electromechanical cable to a winch integral with the main subsurface flotation. On a pre-set schedule, the instrument float with sensors is winched up to the surface if there is no strip passing by, which is defined by an on-board miniature sonar. And it can be immediately winched down to a certain depth if the sonar sensor finds something is coming. Since, because Of logistics, the area can only be visited once for a long time and a minimum of 10 times per day profiles are desired, energy demands are severe. To respond to these concerns, the system has been designed to conserve a substantial portion of the potential energy lost during the ascent phase of each profile and subsequently use this energy to pull the instrument down. Compared with the previous single-point layered measuring mode, it is advanced and economical. At last the paper introduces the test in the South China Sea.

A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET

This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.