Observation Of Diffusion Process Of A Water Droplet Immersed In Protein Solution In Microgravity

Pure liquid - liquid diffusion driven by concentration gradients is hard to study in a normal gravity environment since convection and sedimentation also contribute to the mass transfer process. We employ a Mach - Zehnder interferometer to monitor the mass transfer process of a water droplet in EAFP protein solution under microgravity condition provided by the Satellite Shi Jian No 8. A series of the evolution charts of mass distribution during the diffusion process of the liquid droplet are presented and the relevant diffusion coefficient is determined.

As-doped p-type ZnO films by sputtering and thermal diffusion process

As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO. (c) 2006 American Institute of Physics.

Diffusion dominated process for the crystal growth of a binary alloy

The pure diffusion process has been often used to study the crystal growth of a binary alloy in the microgravity environment. In the present paper, a geometric parameter, the ratio of the maximum deviation distance of curved solidification and melting interfaces from the plane to the radius of the crystal rod, was adopted as a small parameter, and the analytical solution was obtained based on the perturbation theory. The radial segregation of a diffusion dominated process was obtained for cases of arbitrary Peclet number in a region of finite extension with both a curved solidification interface and a curved melting interface. Two types of boundary conditions at the melting interface were analyzed. Some special cases such as infinite extension in the longitudinal direction and special range of Peclet number were reduced from the general solution and discussed in detail.

Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In-P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. (C) 2002 American Institute of Physics.

Spectroscopic Study on Water Diffusion in Poly(ester urethane) Block Copolymer Matrix

The diffusion of water in a phase-separated biodegradable poly(ester urethane) shape-memory polymer with poly(E-caprolactone) (PCL) as the soft segment was investigated using time-resolved FTIR-ATR. On the basis of the band fitting and water ordering in drawn films, the broad water band in the 3800-2800 cm(-1) region was decomposed into four bands located at 3620, 3510, 3400, and 3260 cm(-1), and the first two components at 3620 and 35 10 cm(-1) were assigned to the vibrations of antisymmetric and symmetric stretching of water hydrogen bonded with the C=O group of the soft segment. The other two were associated with water bonded to the urethane hard segments in the forms of N-H:O-H:O=C bridge hydrogen bond and double hydrogen bonds with two C=O groups, respectively. Furthermore, band fitting and two-dimensional correlation analyses revealed that in the diffusion process, water first diffuses into the continuous soft-rich PCL phase and then into the hard-rich urethane domains, forming double hydrogen bonds with two C=O groups prior to the bridge hydrogen bond in the form of N-H:O-H:O=C.

Numerical Solutions for the Transient Flow in the Homogenous Closed Circle Reservoirs

There are many fault block fields in China. A fault block field consists of fault pools. The small fault pools can be viewed as the closed circle reservoirs in some case. In order to know the pressure change of the developed formation and provide the formation data for developing the fault block fields reasonably, the transient flow should be researched. In this paper, we use the automatic mesh generation technology and the finite element method to solve the transient flow problem for the well located in the closed circle reservoir, especially for the well located in an arbitrary position in the closed circle reservoir. The pressure diffusion process is visualized and the well-location factor concept is first proposed in this paper. The typical curves of pressure vs time for the well with different well-location factors are presented. By comparing numerical results with the analytical solutions of the well located in the center of the closed circle reservoir, the numerical method is verified.

Some theoretical aspects of the simplified Navier-Stokes(SNS) equations

This study deals with the formulation, mathematical property and physical meaning of the simplified Navier-Stokes (SNS) equations. The tensorial SNS equations proposed is the simplest in form and is applicable to flow fields with arbitrary body boundaries. The zones of influence and dependence of the SNS equations, which are of primary importance to numerical solutions, are expounded for the first time from the viewpoint of subcharacteristics. Besides, a detailed analysis of the diffusion process in flow fields shows that the diffusion effect has an influence zone globally windward and an upwind propagation greatly depressed by convection. The maximum upwind influential distance of the viscous effect and the relative importance of the viscous effect in the flow direction to that in the direction normal to the flow are represented by the Reynolds number, which illustrates the conversion of the complete Navier-Stokes (NS) equations to the SNS equations for flows with large Reynolds number.

Floating zone convection

The microgravity research, as a branch of the advanced sciences and a spe- cialized field of high technology, has been made in China since the late 1980's. The research group investigating microgravity fluid physics consisted of our col- leagues and the authors in the Institute of Mechanics of the Chinese Academy of Sciences (CAS), and we pay special attention to the floating zone convection as our first research priority. Now, the research group has expanded and is a part of the National Microgravity Laboratory of the CAS, and the research fields have been extended to include more subjects related to microgravity science. Howev- er, the floating zone convection is still an important topic that greatly holds our research interests.

用光学干涉方法对液相扩散传质过程的研究

液相中扩散传质过程研究无论对于基础理论还是生产实践都具有重要的意义.但在通常的重力环境中,传质过程不是单因素地由浓度梯度来决定,对流和沉降会对实验研究产生重要的干扰.通过光学干涉技术的应用,实现对于扩散过程中的传质系数进行测量,实验中采用Math-Zehnder干涉仪对于整个传质过程进行监控并记录相关图像信息.这些图像信息是贯穿在整个实验过程中的连续录像,不同于其它实验记录的静态图像.通过计算这些随时间改变的干涉条纹的变化,就可以推导出传质系数的结果.实验液体选用水/葡萄糖溶液,之后还将进一步将该实验装置搭载TF-1火箭,进行微重力实验,以排除重力产生的影响.

Three-dimensional micro- and nano-fabrication in transparent materials by femtosecond laser

Femtosecond pulsed lasers have been widely used for materials microprocessing. Due to their ultrashort pulse width and ultrahigh light intensity, the process is generally characterized by the nonthermal diffusion process. We observed various induced microstructures such as refractive-index-changed structures, color center defects, microvoids and microcracks in transparent materials (e.g., glasses after the femtosecond laser irradiation), and discussed the possible applications of the microstructures in the fabrication of various micro optical devices [e.g., optical waveguides, microgratings, microlenses, fiber attenuators, and three-dimensional (3D) optical memory]. In this paper, we review our recent research developments on single femtosecond-laser-induced nanostructures. We introduce the space-selective valence state manipulation of active ions, precipitation and control of metal nanoparticles and light polarization-dependent permanent nanostructures, and discuss the mechanisms and possible applications of the observed phenomena.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Deep level defects in high temperature annealed InP

Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation

Ga(+)ion implantation followed by rapid thermal annealing (RTA) was used to enhance the interdiffusion in GaAs/AlGaAs single Quantum Wells(SQWs). The extent of intermixing was found to be dependent on the well depth, number of implanted ions and annealing time. A very fast interdiffusion process occurs at the initial annealing stage. After that, the enhanced diffusion coefficient goes back to the umimplanted value. We propose a two-step model to explain the diffusion process as a function of the annealing time : a fast diffusion process and a saturated diffusion process. The interdiffusion coefficient of the fast diffusion was found to be of well depth dependence and estimated to be in the range of 5.4x10(-16) similar to 1.5x10(-15)cm(2)s(-1). Copyright (C) 1996 Published by Elsevier Science Ltd

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.