Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Si based quantum cascade structure: from energy band structures design to materials growth

In this paper, we propose an n-type vertical transition bound-to-continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Gamma-L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1-yGey pseudosubstrate is obtained by thermal annealing of Si1-xGex/Ge/Si structure. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and path planning for a remote-brained service robot

This article introduced an effective design method of robot called remote-brain, which is made the brain and body separated. It leaves the brain in the mother environment, by which we mean the environment in which the brain's software is developed, and talks with its body by wireless links. It also presents a real robot TUT06-B based on this method which has human-machine interaction, vision systems, manipulator etc. Then it discussed the path planning method for the robot based on ant colony algorithm in details, especially the Ant-cycle model. And it also analyzed the parameter of the algorithm which can affect the convergence. Finally, it gives the program flow chat of this algorithm.

Application of ICA in on-line verification of the phase difference of the current sensor

The performance of the current sensor in power equipment may become worse affected by the environment. In this paper, based on ICA, we propose a method for on-line verification of the phase difference of the current sensor. However, not all source components are mutually independent in our application. In order to get an exact result, we have proposed a relative likelihood index to choose an optimal result from different runs. The index is based on the maximum likelihood evaluation theory and the independent subspace analysis. The feasibility of our method has been confirmed by experimental results.

Study on text-dependent speaker recognition based on Biomimetic Pattern Recognition

We studied the application of Biomimetic Pattern Recognition to speaker recognition. A speaker recognition neural network using network matching degree as criterion is proposed. It has been used in the system of text-dependent speaker recognition. Experimental results show that good effect could be obtained even with lesser samples. Furthermore, the misrecognition caused by untrained speakers occurring in testing could be controlled effectively. In addition, the basic idea "cognition" of Biomimetic Pattern Recognition results in no requirement of retraining the old system for enrolling new speakers.

High-Dimensional Space Geometrical Informatics and its applications to image restoration

With a view to solve the problems in modern information science, we put forward a new subject named High-Dimensional Space Geometrical Informatics (HDSGI). It builds a bridge between information science and point distribution analysis in high-dimensional space. A good many experimental results certified the correctness and availability of the theory of HDSGI. The proposed method for image restoration is an instance of its application in signal processing. Using an iterative "further blurring-debluring-further blurring" algorithm, the deblured image could be obtained.

Continuous speech recognition based on ICA and geometrical learning

We investigate the use of independent component analysis (ICA) for speech feature extraction in digits speech recognition systems. We observe that this may be true for recognition tasks based on Geometrical Learning with little training data. In contrast to image processing, phase information is not essential for digits speech recognition. We therefore propose a new scheme that shows how the phase sensitivity can be removed by using an analytical description of the ICA-adapted basis functions. Furthermore, since the basis functions are not shift invariant, we extend the method to include a frequency-based ICA stage that removes redundant time shift information. The digits speech recognition results show promising accuracy. Experiments show that the method based on ICA and Geometrical Learning outperforms HMM in a different number of training samples.

Research on multi-degree-of-freedom neurons with weighted graphs

In this paper, we redefine the sample points set in the feature space from the point of view of weighted graph and propose a new covering model - Multi-Degree-of-Freedorn Neurons (MDFN). Base on this model, we describe a geometric learning algorithm with 3-degree-of-freedom neurons. It identifies the sample points secs topological character in the feature space, which is different from the traditional "separation" method. Experiment results demonstrates the general superiority of this algorithm over the traditional PCA+NN algorithm in terms of efficiency and accuracy.

A novel image restoration algorithm based on high-dimensional space geometry

A novel image restoration approach based on high-dimensional space geometry is proposed, which is quite different from the existing traditional image restoration techniques. It is based on the homeomorphisms and "Principle of Homology Continuity" (PHC), an image is mapped to a point in high-dimensional space. Begin with the original blurred image, we get two further blurred images, then the restored image can be obtained through the regressive curve derived from the three points which are mapped form the images. Experiments have proved the availability of this "blurred-blurred-restored" algorithm, and the comparison with the classical Wiener Filter approach is presented in final.