41 resultados para Davenport, Horace Willard, 912-
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
<span style="color: #4b4942; font-family: Arial, Verdana, Helvetica, sans-serif; line-height: 18px">A new X-ray diffraction method for characterising thermal mismatch stress (TMS) in SiC</span><sub style="color: #4b4942; font-family: Arial, Verdana, Helvetica, sans-serif; line-height: 18px">w</sub><span style="color: #4b4942; font-family: Arial, Verdana, Helvetica, sans-serif; line-height: 18px">–Al composite has been developed. The TMS and thermal mismatch strain (TMSN) in SiC whiskers are considered to be axis symmetrical, and can be calculated by measuring the lattice distortion of the whiskers. Not only the average TMS in whiskers and matrix can be obtained, but the TMS components along longitudinal and radial directions in the SiC whiskers can also be deduced. Experimental results indicate that the TMS in SiC whiskers is compressive, and tensile in the aluminium matrix. The TMS and TMSN components along the longitudinal direction in the SiC whiskers are greater than those along the radial direction for a SiC</span><sub style="color: #4b4942; font-family: Arial, Verdana, Helvetica, sans-serif; line-height: 18px">w</sub><span style="color: #4b4942; font-family: Arial, Verdana, Helvetica, sans-serif; line-height: 18px">–Al composite quenched at 500°C.</span>
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In underdense plasmas, the transverse ponderomotive force of an intense laser beam with Gaussian transverse profile expels electrons radially, and it can lead to an electron cavitation. An improved cavitation model with charge conservation constraint is applied to the determination of the width of the electron cavity. The envelope equation for laser spot size derived by using source-dependent expansion method is extended to including the electron cavity. The condition for self-guiding is given and illuminated by an effective potential for the laser spot size. The effects of the laser power, plasma density and energy dissipation on the self-guiding condition are discussed.
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Resumo:
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Resumo:
We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.
Resumo:
This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization.
Resumo:
1985-1992,WEPP,10°15°20°25°28°,,;WEPP,I30WEPP,I300.92mm/min,WEPPPI30,PI30129mm2/min,∑PI30WEPP,∑PI30150mm2/min,,∑PI30WEPPNash-SutcliffeME0.9140.9120.617;Nash-SutcliffeME...
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We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115 K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.
Resumo:
A 1.3m GaInNAs resonant cavity enhanced (RCE) photodetector (PD) has been grown by molecular beam epitaxy (MBE) monolithically on (100) GaAs substrate using a home-made ion-removed dc-plasma cell as nitrogen source. A transfer matrix method was used to optimize the device structure. The absorption region is composed of three GaInNAs quantum wells separated by GaAs layers. Devices were isolated by etching 130m-diameter mesas and filling polyamide into grooves. The maximal quantum efficiency of the device is about 12% at 1.293m. Full width at half maximum (FWHM) is 5.8nm and 3dB bandwidth is 304MHz. Dark current is 2 * 10~(-11) A at zero bias voltage. Further improvement of the performance of the RCE PD can be obtained by optimizing of the structure design and MBE growth conditions.
