73 resultados para DC-DC converter design

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The paper proposes a high efficiency RFID UHF power converter unit to overcome the low efficiency problem. This power converter is mainly composed of an RF-DC converter and a DC-DC converter. In order to overcome the low efficiency problem in low current consuming condition, a DC-DC converter is added to conventional single RF-DC converter rectifier to increase the rectifying efficiency of the RFDC rectifier. The power converter is implemented in a 0.18 um mixed signal, 1p6m CMOS technology. Simulation shows the power converter has an average improvement of 5% and can achieve efficiency as high as 30% with 900MHz, 16uW RF input power and 1.3 V 3.6uA DC output.

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A brief summary of H bridge non-isolated DC-DC converter and operation principles is presented in this paper. A small signal model of the ideal converter in continuous current mode is proposed and simulation results of the converter are given. The hardware structure of digital power supply controller based on TMS320F2808 MCU is introduced. 中文摘要:概括了加速器 H 桥非隔离式电源的运行原理与特点,在简化运行方式基础上建立了理想状态下电源连续工作模式的数学模型,并给出了仿真分析结果,介绍了基于 TMS320F2808MCU 实现的数字化电源控制器结构。

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This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

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This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

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利用特殊设计的等离子体发生器,选择等离子体产生的工艺参数,实现工艺过程的精确控制,在大气压环境下获得了性能稳定的氖气直流层流等离子体射流。与湍流等离子体射流长度较短、径向尺寸较大、工作噪音高等特点相比,层流等离于体射流长度可达到550mm,而且沿整个射流长度其径向尺寸维持不变,工作噪音很小。当气流量为120cm~3/s、弧电流在70-200A的范围时,射流长度随弧电流的增加而增加,热效率起初略有降低然后维持平稳。随气流量的增加,层流等离子体射流的热效率也增加,在弧电流为200A时,可以达到40%。实验中测

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Arc voltage fluctuations in a direct current (DC) non-transferred arc plasma generator are experimentally studied, in generating a jet in the laminar, transitional and turbulent regimes. The study is with a view toward elucidating the mechanism of the fluctuations and their relationship with the generating parameters, arc root movement and flow regimes. Results indicate that the existence of a 300 Hz alternating current (AC) component in the power supply ripples does not cause the transition of the laminar plasma jet into a turbulent state. There exists a high frequency fluctuation at 4 kHz in the turbulent jet regime. It may be related to the rapid movement of the anode attachment point of the arc.

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A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

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Arc root motion on the anode surface of a dc non-transferred plasma torch was observed. Adding hydrogen changes the arc root attachment from a diffused type to a constricted type, and the arc root of Ar-H-2 plasma suddenly,jumps from one spot to another irregularly. Images of the arc root motions taken by a high-speed video camera are presented.

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Results observed experimentally are presented, about the DC arc plasma jets and their arc-root behaviour generated at reduced gas pressure without or with an applied magnetic field. Pure argon, argon-hydrogen or argon- nitrogen mixture was used as the plasma-forming gas. A specially designed copper mirror was used for a better observation of the arc-root behaviour on the anode surface of the DC non-transferred arc plasma torch. It was found that in the cases without an applied magnetic field, the laminar plasma jets were stable and approximately axisymmetrical. The arc-root attachment on the anode surface was completely diffusive when argon was used as the plasma-forming gas, while the arc-root attachment often became constrictive when hydrogen or nitrogen was added into the argon. As an external magnetic field was applied, the arc root tended to rotate along the anode surface of the non-transferred arc plasma torch.

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Experimentally observed, results are presented for the DCarcplasmajets and theirarc-rootbehaviors generated atreduced gas pressure and without or with an' applied magnetic field. Pure argon, argon -hydrogen or argon-nitrogen mixture is used as the plasma-forming gas. A specially designed copper mirror is constructed and used for better observing the arc-root behavior on the anode surface of the DC non-transferred arcplasma torch. It is shown that for the cases without applied magnetic field, the laminar plasmajets are stable and approximately axisymmetrical. The arc-root attachment on the anode surface is completely diffusive when argon is used as the plasma-forming gas, while the arc-root attachment often becomes constrictive when hydrogen or nitrogen is added into the argon. When an external magnetic field is applied, the arcroot tends to rotate along the anode surface of the non-transferred arcplasma torch.

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In recent years, stable and long laminarplasma jets have been successfully generated, and thus it is possible to achieve low-noise working surroundings, better process repeatability and controllability, and reduced metal-oxidation degree in plasma materials processing. With such a recent development in thermal plasma science and technology as the main research background, modeling studies are performed concerning the DCarcplasmatorch for generating the long laminar argon plasma jet. Two different two-dimensional modeling approaches are employed to deal with the arc-root attachment at the anode surface. The first approach is based on circumferentially uniform arc-root attachment, while the second uses the so-called fictitious anode method. Modeling results show that the highest temperature and maximum axial-velocity at the plasmatorch exit are ~15000 K and ~1100 m/s, respectively, for the case with arc current of 160 A and argon flow rate of 1.95×10{sup}(-4)kg/s.