双包层光纤侧面耦合器

研究了一种侧面抽运双包层光纤的方法，从被剥除了外包层、端面为350μm×400μm的D型双包层光纤内包层上切下长度为3mm的一段柱体，并胶合在相同的双包层光纤内包层的侧面上，构成了柱体-光纤侧面耦合器。半导体激光器的抽运光从该柱体的一端入射并通过它耦合进入双包层光纤的内包层，实验测得耦合器最大耦合效率为85％。该方法适用于输出功率为数瓦的光纤激光器和放大器的侧面抽运。

Fabrication and amplified spontaneous emission spectrum of Er3+-doped tellurite glass fiber with D-shape cladding

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A single-mode Er3+-doped tellurite glass fiber with D-shape cladding was fabricated in this work. The characterization of amplified spontaneous emission (ASE) from this newly fabricated Er3+-doped tellurite fibers are exhibited. When pumped at 980 nm, a very broad erbium ASE nearly 150 nm around 1.53 mum is observed. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of 2 mW from Er3+-doped tellurite fiber ASE source was obtained under the pump power of 660 mW. The broad 1.53 mum emission of Er3+ in tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (C) 2004 Elsevier B.V. All rights reserved.

20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

Investigation on upconversion luminescence in Er3+/Yb3+ codoped tellurite glasses and fibers

The upconversion properties of Er3+/Yb3+ codoped tellurite glasses and glass fibers with D-shape cladding under 980 mu excitation were investigated. Intense emission bands centered at 531, 546 and 658 nm corresponding to the transitions Er3+: H-2(11/2) -> I-4(15/2) , S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. Compared with that in Er3+/Yb3+ codoped tellurite bulk glass, the upconversion luminescence becomes more efficient in the fiber geometry. The dependence of upconversion intensities on fiber geometry and possible upconversion mechanism are discussed and evaluated. The presented Er3+/Yb3+ codoped tellurite fibers with intense upconversion luminescence can be used as potential host materials for upconversion fiber lasers. (c) 2005 Elsevier B.V. All rights reserved.

Fabrication and emission properties of Er3+/Yb3+ codoped tellurite glass fiber for broadband optical amplification

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A new single mode Er3+/Yb3+ codoped tellurite fiber with D-shape cladding geometry is fabricated in this work. When pumped at 980 nm, a broad erbium amplified spontaneous emission (ASE) nearly 100 nm in the wavelength range of 1450-1650 ran around 1.53 mu m is observed. It was found that the emission spectrum from erbium in tellurite glass fibers is almost twice as broad as the corresponding spectrum in tellurite bulk glass. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of about 2.3 mW from Er3+/Yb3+ codoped tellurite fiber ASE source is obtained under the pump power of 700 mW. The broad 1.53 mu m emission of Er3+ in Er3+/Yb3+ codoped tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (c) 2005 Elsevier B.V. All rights reserved.

Effects of the dinoflagellate Alexandrium tamarense on early development of the scallop Argopecten irradians concentricus

The effects of Alexandrium tamarense (strain ATHK) on early development of the bay scallop Argopecten irradians concentricus were studied under laboratory conditions. The algal culture was verified by HPLC to produce paralytic shellfish poisoning (PSP) at a level of 37.48 fmol/cell. Survival of the scallop larvae was not affected when they were grown with A. tamarense at concentrations of 500-10,000 cells/ml for 48 h. However, the activity of D-shape larvae was inhibited after 48-h exposure to A. tamarense at the algal cell density of 10,000 cells/ml. Scallop growth was inhibited significantly by A. tantarense during a 14-day exposure starting at the eye-spot larval stage. The size of juvenile scallops in the group of 10,000 cells/ml was only about 32% of that of the controls, although no obvious effect of A. tamarense was found on the rate of larval metamorphosis. All juvenile scallops survived in algal concentrations of 600-2400 cells/ml, however, attachment rates were significantly lower than control values after a 5-h exposure to A. tamarense at concentrations >600 cells/ml, while they were not obviously reduced after only 1 h of exposure. At concentrations >600 cells/ml, the climbing ability of juveniles was clearly reduced by exposure to A. tamarense after only 1 h. The climbing rate and height were only 55% and 45%, respectively, of those of the controls, when exposed to A. tantarense at a concentration of 600 cells/ml. The results indicated that A. tamarense blooms may have detrimental impacts on shellfish at early life stages, therefore, special attention should be paid to the toxic algal blooms in shellfish breeding area. (C) 2003 Elsevier Science B.V. All rights reserved.

Study on impact of dinoflagellate Alexandrium tamarense on life activities of marine bivalves

The effects of a PSP producing dinoflagellate Alexandrium tamarense on marine bivalves at their several important life,stages: egg, D - shape larva, eyespot larva, juvenile and adult, were studied! The results show that the hitching survival, activity, filtration and! growth were adversely affected by the alga and the impact was significantly increased with the increase of algal density. The inhibitory effect on egg hatching was most significant, which the hatching rate was only 30% of the control when exposed to the alga at 100 cell/cm(3) after 36 h. Further experiments show that the algal culture, re-suspended cells and cell fragments had the inhibitory effect, while no such effect was from the cell-free medium, cell contents and standard STX. The results indicate that the alga could produce unknown toxins, rather than PSP, associated with the cell surface.

Inhibition of egg hatching success and larvae survival of the scallop, Chlamys farreri, associated with exposure to cells and cell fragments of the dinoflagellate Alexandrium tamarense

We report an apparently novel toxic effect of the dinoflagellate Alexandrium tamarense, manifested by inhibition of the egg hatching success of the scallop, Chlamys farreri. The hatching rate of C. farreri approached only 30% of controls when its fertilised eggs were exposed for 36 h to A. tamarense cells or cellular fragments at a concentration of 100 cells/ml, and the hatching rate was just 5% after exposure to A. tamarense of 500 cells/ml. Similar exposures of the fertilised scallop eggs to two other algal species, the diatom Phaeodactylum tricornutum and the raphidophyte Heterosigma carterae, resulted in no such toxicity or inhibitory effects.. Likewise, exposure of eggs to standard STX toxin. as well as to A. tamarense cell contents (supernant of re-suspended algal cells following ultrasonication and centrifugation), did not elicit this inhibitory response. However, exposure of the scallop eggs to cell cultures, intact algal cells, or cell fragments of A. tamarense produced marked toxicity. The alga also influenced larvae at early D-shape stage of scallop. The survival rates began to decrease significantly after exposed for 6 days at concentration of 3000 cells/ml and above: no larvae could survive after 14-day exposure to A. tamarense at 10,000 cells/ml or 20-day at 5000 cells/ml. The results indicated the production of novel substances from A. tamarense which can cause adverse effects on egg hatching and survival of the scallop larvae, The experiment also found that the developmental stages before blastula was the developmental period most sensitive to the A. tamarense toxin(s) and the alga at early exponential stage had the strongest effect on egg hatching comparing with other growth phases. The adverse effect of A. tamarense on early development of scallops may cause decline of shellfish population and may have further impact on marine ecosystem. (C) 2001 Elsevier Science Ltd. All rights reserved.

Two-dimensional short surface-waves of an oscillating cylinder with arbitrary shape of cross-section

The 2-D short surface waves produced by a partially submerged cylinder which performsarbitrary oscillating motion are discussed. The uniformly valid solution which is applicableto all kinds of cylinder wall cases at waterline point is obtained. It is pointed out that thesolution obtained by Holford[J] for the vertical oscillating motion of a cylinder is incomplete.The reason why his solution cannot go over to that for the case of vertical cylinder wall atwaterline point is also pointed out.

Electronic states of InAs/GaAs tyre-shape quantum ring

In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR's section thickness d, and insensitively dependent on TSQR's section inner radius R-1 and TSQR's inner radius R-2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.

Electric-field tuning s-d exchange interaction in quantum dots

We investigate theoretically the electron-hole pair states in CdTe quantum dot (QD) containing a single Mn2+ ion by the magneto-optical spectrum tuned by the electric field. It is shown that the electric field does not only tune the spin splitting via the sp-d exchange interaction but also affect significantly the anticrossing behavior in the photoluminescence spectrum. This anticrossing is caused by the s-d exchange interaction and/or the hole mixing effect, which depends sensitively on the shape of the QD. (C) 2008 American Institute of Physics.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.