Molecular dynamics studies on the dislocation gliding near a tilt boundary

The gliding behavior of edge dislocation near a grain boundary(QB) in copper under pure shear stresses is simulated by using molecular dynamics(MD) method. Many-body potential incorporating the embedded atom method (EAM) is used. The critical shear stresses for a single disocation to pass across GB surface are obtained at values of sigma(c)=23MPa similar to 68 MPa and 137 MPa similar to 274 MPa for Sigma=165 small angle tilt GB at 300 K and 20 K, respectively. The first result agrees with the experimental yield stress sigma(y)(=42 MPa) quite well. It suggests that there might be one of the reasons of initial plastic yielding caused by single dislocation gliding across GB. In addition, there might be possibility to obtain yield strength from microscopic analysis. Moreover, the experimental value of sigma(y) at low temperature is generally higher than that at room temperature. So, these results are in conformity qualitatively with experimental fact. On the other hand, the Sigma=25 GB is too strong an obstacle to the dislocation. In this case, a dislocation is able to pass across GB under relatively low stress only when it is driven by other dislocations. This is taken to mean that dislocation pile-up must be built up in front of this kind of GB, if this GB may take effect on the process of plastic deformation.

An analysis of the effects of symmetrical tilt grain boundaries on the plastic deformation

A numerical investigation on the simple polycrystals containing three symmetrical tilt grain boundaries (GBs) is carried out within the framework of crystal plasticity which precisely considers the finite deformation and finite lattice rotation as well as elastic anisotropy. The calculated results show that the slip geometry and the redistribution of stresses arising from the anisotropy and boundary constraint play an important role in the plastic deformation in the simple polycrystals. The stress level along GB is sensitive to the load level and misorientation, and the stresses along QB are distributed nonuniformly. The GB may exhibit a softening or strengthening feature, which depends on the misorientation angle. The localized deformation bands usually develop accompanying the GB plastic deformation, the impingement of the localized band on the GB may result in another localized deformation band. The yield stresses with different misorientation angles are favorably compared with the experimental results.

Flow similariy applied in convection-based tilt sensor

The environment temperature has inevitable effects on property of the convect ion-based tilt sensors. It not only redefines the application, but also prevents the improvement of the sensor performance. Numerical simulation of the fluid flow in the chamber of a sensor was performed and the influence of the environment temperature was studied in this paper. At zero tilt angle, the temperature distribution along the perpendicular line cross the heat source at various environment temperatures was presented. It was found that the flow varied dramatically at different environment temperatures, which would cause the output signal vary accordingly, even when the tilt angle was kept at a constant, because this device works by sensing the change of flow. At the same condition, we present the numerical results when the temperature difference across the heat source and the environment was kept at the same, in those results, it was found that the temperature difference at every point along the perpendicular line cross the heat source keep the same, this result confirms the similarity principle of nature convection. Second, A method of eliminating environment temperature infect on property of convect ion-based tilt sensor, which is based on the theory of flow similarity, is proposed. It was found that a thermal transistance can be piped on the circuit of heat source to compensate the temperature of the heat source. A compensative circuit was specially designed which can keep flow similarity by changing heat source temperature in order to eliminate the influence of environment temperature. The experiment results show that above 70% temperature drift can be eliminated by this compensative circuit.

Performance analysis of bit error rate for free space optical communication with tip-tilt compensation based on gamma-gamma distribution

In this paper, the gamma-gamma probability distribution is used to model turbulent channels. The bit error rate (BER) performance of free space optical (FSO) communication systems employing on-off keying (OOK) or subcarrier binary phase-shift keying (BPSK) modulation format is derived. A tip-tilt adaptive optics system is also incorporated with a FSO system using the above modulation formats. The tip-tilt compensation can alleviate effects of atmospheric turbulence and thereby improve the BER performance. The improvement is different for different turbulence strengths and modulation formats. In addition, the BER performance of communication systems employing subcarrier BPSK modulation is much better than that of compatible systems employing OOK modulation with or without tip-tilt compensation.

多效唑（MET）在玉米组培中的作用及机理研究

多效唑（MET）是一种新型的植物生长调节剂．本文以多杆多穗青饲玉米为材料详细地研究了它征组织培养中的作用和生物学效应，并对它的作用机理也进行了初步的探讨。 研究结果表明：(1)适宜浓度的MET能够提高不同外植体愈伤组织的诱导率;(2)2～4 mg／lMET能改善愈伤组织的质量，提高愈伤组织的分化率、绿苗形成率、根的形成率和正常苗／异常苗的比值;（3）壮苗培养，MEP能使再生苗形态结构和生理等方面均发生较大的变化，并使其生长健壮，根系发达，移裁入土后成活率提高，达80%以上;（4）在再生苗的长期保存中，MET也具有良好的作用效应;(5)在继代培养中，MET处理后，愈伤组织的生长值下降;过氧化物酶活性和IAA氧化酶活性增加， 内源乙烯的释放量上升;外源GA3可逆转MET的作用效应，IAA、kt、ABA没有逆转效应，相反，ABA与MET对抑制愈防组织的生长具有加成效应．MET的作用机班可能是：通过改变细胞内酶的活性和内源激素的含量水平来控制愈伤组织细胞的生长、分化以及再生植株的生长和发育。 MET在玉米组培中所表现出的良好的作用效应表明：对于解决植物组织培养中所普遍存在的一些问题，用MET处理可能会变成一种有效的方法。展示出MET在植物生物技术领域也具有广泛的应用前景。

QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders

A computer program, QtUCP, has been developed based on several well-established algorithms using GCC 4.0 and Qt (R) 4.0 (Open Source Edition) under Debian GNU/Linux 4.0r0. it can determine the unit-cell parameters from an electron diffraction tilt series obtained from both double-tilt and rotation-tilt holders. In this approach, two or more primitive cells of the reciprocal lattice are determined from experimental data, in the meantime, the measurement errors of the tilt angles are checked and minimized. Subsequently, the derived primitive cells are converted into the reduced form and then transformed into the reduced direct primitive cell. Finally all the patterns are indexed and the least-squares refinement is employed to obtain the optimized results of the lattice parameters. Finally, two examples are given to show the application of the program, one is based on the experiment, the other is from the simulation. (C) 2008 Elsevier B.V. All rights reserved.

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition

The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN/GaN system with large out-of-plane lattice mismatch. (c) 2006 American Institute of Physics.

A highly efficient beam propagation method for modeling step-index waveguides with tilt interface

Based on a new finite-difference scheme and Runge-Kutta method together with transparent boundary conditions (TBCs), a novel beam propagation method to model step-index waveguides with tilt interfaces is presented. The modified scheme provides an precies description of the tilt interface of the nonrectangular waveguide structure, showing a much better efficiency and accuracy comparing with the previously presented formulas.

New finite-difference scheme for simulations of step-index waveguides with tilt interfaces

A new finite-difference scheme is presented for the second derivative of a semivectorial field in a step-index optical waveguide with tilt interfaces. The present scheme provides an accurate description of the tilt interface of the nonrectangular structure. Comparison with previously presented formulas shows the effectiveness of the present scheme.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.

Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching

The crystallographic tilt of the lateral epitaxial overgrown (LEO) GaN on sapphire Substrate with SiNx mask is investiaated by double crystal X-ray diffraction. Two wing peaks beside the GaN 0002 peak can be observed for the as-grown LEO GaN. During the selective etching of SiNx mask, each wing peak splits into two peaks, one of which disappears as the mask is removed, while the other remains unchanged. This indicates that the crystallographic tilt of the overgrown region is caused not only by the plastic deformation resulted from the bending of threading dislocations, but by the non-uniformity elastic deformation related with the GaN, SiNx interfacial forces. The widths of these two peaks are also studied in this paper. (C) 2002 Elsevier Science B.V. All rights reserved.

tilt menu: using the 3d orientation information of pen devices to extend the selection capability of pen-based user interfaces

We present a new technique called‘Tilt Menu’ for better extending selection capabilities of pen-based interfaces.The Tilt Menu is implemented by using 3D orientation information of pen devices while performing selection tasks.The Tilt Menu has the potential to aid traditional onehanded techniques as it simultaneously generates the secondary input (e.g., a command or parameter selection) while drawing/interacting with a pen tip without having to use the second hand or another device. We conduct two experiments to explore the performance of the Tilt Menu. In the first experiment, we analyze the effect of parameters of the Tilt Menu, such as the menu size and orientation of the item, on its usability. Results of the first experiment suggest some design guidelines for the Tilt Menu. In the second experiment, the Tilt Menu is compared to two types of techniques while performing connect-the-dot tasks using freeform drawing mechanism. Results of the second experiment show that the Tilt Menu perform better in comparison to the Tool Palette, and is as good as the Toolglass.

the tilt cursor: enhancing stimulus-response compatibility by providing 3d orientation cue of pen

In order to improve stimulus-response compatibility of touchpad in pen-based user interface, we present the tilt cursor, i.e. a cursor dynamically reshapes itself to providing the 3D orientation cue of pen. We also present two experiments that evaluate the tilt cursor’s performance in circular menu selection and specific marking menu selection tasks. Results show that in a specific marking menu selection task, the tilt cursor significantly outperforms the shape-fixed arrow cursor and the live cursor [4]. In addition, results show that by using the tilt cursor, the response latencies for adjusting drawing directions are smaller than that by using the other two kinds of cursors.