High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions

High-speed and high-power InGaAsP/lnP selective proton-bombarded buried crescent (SPB-BC) lasers with optical field attenuation regions were reported. The defect of proton bombardment can not affect the lifetime of the SPB-BC laser because the optical field attenuation region obstructs the growth and propagation of defects. A CW light output over 115 mW was achieved at room temperature using a 500 mu m long cavity SPB-BC laser. The 3 dB bandwidth was 8.5 GHz, and the lifetime was about 8.5 x 10(5) h. The capacitance of four kinds of current blocking structures was first measured in our experiment, and the results shown that the capacitance of proton-bombarded pnpn structure was not only less than that of pnpn current blocking structure, but also less than that of semi-insulating Fe-InP structure.

Spatiotemporal evolution and multiple self-focusing of ultrashort pulses in a resonant two-level medium

The spatiotemporal evolutions of ultrashort pulses in two dimensions are investigated numerically by solving the coupled Maxwell-Bloch equations without invoking the slowly varying envelope approximation and rotating-wave approximation. For an on-axis 2n pi sech pulse, local delay makes the temporal split 2 pi sech pulses crescent-shaped in the transverse distribution. Due to the transverse effect, the temporal split 2 pi sech pulses become unstable and experience reshaping during the propagation process. Then, interference occurs between the successive crescent-shaped pulses and multiple self-focusing can form.

Effective method for evaluation of semiconductor laser quality

The measurements of one hundred 1.3 mu m planar buried crescent (PBC) structure InGaAsP/InP lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconductor lasers effectual. By measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices. (C) 2000 Elsevier Science Ltd. All rights reserved.

Extraction kinetics of Sc(III), Y(III), La(III) and Gd(III) from chloride medium by Cyanex 302 in heptane using the constant interfacial cell with laminar flow

The extraction kinetics of Sc, Y, La and Gd(III) from the hydrochloric acid medium using Cyanex 302 (hereafter HL) in heptane solution have been measured by the constant interfacial cell with laminar flow. Reaction regions are explored at liquid-liquid interface. Extraction regimes are deduced to be diffusion-controlled for Sc(Ill) and mixed controlled for Y, La and Gd(Ill). Extraction mechanisms are discussed according to the dimeric model of Cyanex 302 in non-polar solution. From the temperature dependence of rate measurement, the values of E-a, Delta H-+/-, Delta S-+/- and Delta G(300)(+/-) are calculated and it is found that the absolute values of these parameters keep crescent trend for Sc, Y, La and Gd(III). At the same time, it is found that it can easily achieve the mutual separation among the Sc, Y and La(III) with kinetics extraction methods.