A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.

5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 μm SiGe BiCMOS technology and occupy 1.12×1.25 mm~2 die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85℃ converges within±3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

A Novel Power Supply Solution of a Passive RFID Transponder

This paper presents a power supply solution for fully integrated passive radio-frequency identification(RFID) transponder IC,which has been implemented in 0.35μm CMOS technology with embedded EEPROM from Chartered Semiconductor.The proposed AC/DC and DC/DC charge pumps can generate stable output for RFID applications with quite low power dissipation and extremely high pumping efficiency.An analytical model of the voltage multiplier,comparison with other charge pumps,simulation results,and chip testing results are presented.

A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications

This paper presents an LC VCO with auto-amplitude control （AAC）, in which pMOS FETs are used,and the varactors are directly connected to ground to widen the linear range of Kvco. The AAC circuitry adds little noise to the VCO but provides it with robust performance over a wide temperature and carrier frequency range.The VCO is fabricated in a chartered 50GHz 0.35μm SiGe BiCMOS process. The measurements show that it has - 127. 27dBc/Hz phase noise at 1MHz offset and a linear gain of 32.4MHz/V between 990MHz and 1.14GHz.The whole circuit draws 6. 6mA current from 5V supply.

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy

The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

basic research in computer science and software engineering at sklcs

The State Key Laboratory of Computer Science (SKLCS) is committed to basic research in computer science and software engineering. The research topics of the laboratory include: concurrency theory, theory and algorithms for real-time systems, formal specifications based on context-free grammars, semantics of programming languages, model checking, automated reasoning, logic programming, software testing, software process improvement, middleware technology, parallel algorithms and parallel software, computer graphics and human-computer interaction. This paper describes these topics in some detail and summarizes some results obtained in recent years.

Donor-donor binding in In2O3: Engineering shallow donor levels

Using first-principles band structure methods, we investigate the interactions between different donors in In2O3. Through the formation energy and transition energy level calculations, we find that an oxygen-vacancy creates a deep donor level, while an indium-interstitial or a tin-dopant induces a shallow donor level. The coupling between these donor levels gives rise to even shallower donor levels and leads to a significant reduction in their formation energies. Based on the analysis of the PBE0-corrected band structure and the molecular-orbital bonding diagram, we demonstrate these effects of donor-donor binding. In addition, total energy calculations show that these defect pairs tend to be more stable with respect to the isolated defects due to their negative binding energies. Thus, we may design shallow donor levels to enhance the electrical conductivity via the donor donor binding.