122 resultados para Compression Parallel to Grain tests

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The scattering of linear water waves by an infinitely long rectangular structure parallel to a vertical wall in oblique seas is investigated. Analytical expressions for the diffracted potentials are derived using the method of separation of variables. The unknown coefficients in the expressions are determined through the application of the eigenfunction expansion matching method. The expressions for wave forces on the structure are given. The calculated results are compared with those obtained by the boundary element method. In addition, the influences of the wall, the angle of wave incidence, the width of the structure, and the distance between the structure and the wall on wave forces are discussed. The method presented here can be easily extended to the study of the diffraction of obliquely incident waves by multiple rectangular structures.

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Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

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Cubic InxGa1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of x content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In0.2Ga0.8N layer, epsilon(perpendicular to)=0.4% and epsilon(parallel to)=-0.4% for GaN and epsilon(perpendicular to)=0.37% and epsilon(parallel to)=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In0.2Ga0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the InxGa1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic InxGa1-xN on the x value is nearly linear with In content x less than or equal to 0.24. (C) 2000 American Institute of Physics. [S0021-8979(00)03908-6].

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The boundary condition at the solid surface is one of the important problems for the microfluidics. In this paper we study the effects of the channel sizes on the boundary conditions (BC), using the hybrid computation scheme adjoining the molecular dynamics (MD) simulations and the continuum fluid mechanics. We could reproduce the three types of boundary conditions (slip, no-slip and locking) over the multiscale channel sizes. The slip lengths are found to be mainly dependent on the interfacial parameters with the fixed apparent shear rate. The channel size has little effects on the slip lengths if the size is above a critical value within a couple of tens of molecular diameters. We explore the liquid particle distributions nearest the solid walls and found that the slip boundary condition always corresponds to the uniform liquid particle distributions parallel to the solid walls, while the no-slip or locking boundary conditions correspond to the ordered liquid structures close to the solid walls. The slip, no-slip and locking interfacial parameters yield the positive, zero and negative slip lengths respectively. The three types of boundary conditions existing in "microscale" still occur in "macroscale". However, the slip lengths weakly dependent on the channel sizes yield the real shear rates and the slip velocity relative to the solid wall traveling speed approaching those with the no-slip boundary condition when the channel size is larger than thousands of liquid molecular diameters for all of the three types of interfacial parameters, leading to the quasi-no-slip boundary conditions.

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Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1-xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.

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Cubic GaN/GaAs(0 0 1) epilayers and hexagonal inclusions are characterized by X-ray diffraction (XRD), Photoluminescence (PL), Raman spectroscopy, and transmission electron microscopy (TEM). The X-ray {0 0 0 2} and (1 0 (1) over bar 0) pole figures show that the orientation relationships between cubic GaN and hexagonal inclusions are (1 1 1)//(0 0 0 1), <1 1 2 >//<1 0 (1) over bar 0 >. The distribution of hexagonal inclusions mainly results from the interfacial bonding disorder in the grain boundaries parallel to hexagonal <0 0 0 1 > directions and the lattice mismatch in <0 0 0 1 > directions on {1 0 (1) over bar 0} planes. In order to reduce the energy increase in cubic epilayers, hexagonal lamellas with smaller sizes in <0 0 0 1 > directions often nucleate inside the buffer layer or near the interface between the buffer layer and the epitaxial layer, and penetrate through the whole epitaxial layer with this orientation relationship. (C) 2001 Elsevier Science B.V. All rights reserved.

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In conventional metals, there is plenty of space for dislocations-line defects whose motion results in permanent material deformation-to multiply, so that the metal strengths are controlled by dislocation interactions with grain boundaries(1,2) and other obstacles(3,4). For nano-structured materials, in contrast, dislocation multiplication is severely confined by the nanometre-scale geometries so that continued plasticity can be expected to be source-controlled. Nano-grained polycrystalline materials were found to be strong but brittle(5-9), because both nucleation and motion of dislocations are effectively suppressed by the nanoscale crystallites. Here we report a dislocation-nucleation-controlled mechanism in nano-twinned metals(10,11) in which there are plenty of dislocation nucleation sites but dislocation motion is not confined. We show that dislocation nucleation governs the strength of such materials, resulting in their softening below a critical twin thickness. Large-scale molecular dynamics simulations and a kinetic theory of dislocation nucleation in nano-twinned metals show that there exists a transition in deformation mechanism, occurring at a critical twin-boundary spacing for which strength is maximized. At this point, the classical Hall-Petch type of strengthening due to dislocation pile-up and cutting through twin planes switches to a dislocation-nucleation-controlled softening mechanism with twin-boundary migration resulting from nucleation and motion of partial dislocations parallel to the twin planes. Most previous studies(12,13) did not consider a sufficient range of twin thickness and therefore missed this strength-softening regime. The simulations indicate that the critical twin-boundary spacing for the onset of softening in nano-twinned copper and the maximum strength depend on the grain size: the smaller the grain size, the smaller the critical twin-boundary spacing, and the higher the maximum strength of the material.

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The structural evolution of an ice-quenched high-density polyethylene (HDPE) subjected to uniaxial tensile deformation at elevated temperatures was examined as a function of the imposed strains by means of combined synchrotron small-angle X-ray scattering (SAXS) and wide-angle X-ray scattering (WAXS) techniques. The data show that when stretching an isotropic sample with the spherulitic structure, intralamellar slipping of crystalline blocks was activated at small deformations, followed by a stress-induced fragmentation and recrystallization process yielding lamellar crystallites with their normal parallel to the stretching direction. Stretching of an isothermally crystallized HDPE sample at 120 degrees C exhibited changes of the SAXS diagram with strain similar to that observed for quenched HDPE elongated at room temperature, implying that the thermal stability of the crystal blocks composing the lamellae is only dependent on the crystallization temperature.

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The structural evolution of high-density polyethylene subjected to uniaxial tensile deformation was investigated as a function of strain and after annealing at different temperatures using a scanning synchrotron small-angle X-ray scattering (SAXS) technique. The results confirm that in the course of tensile deformation intralamellar block slips were activated at small deformations followed by a stress-induced fragmentation and recrystallization process yielding thinner lamellae with their normal parallel to the stretching direction. The original sheared lamellae underwent severe internal deformation so that they were even less stable than the newly developed thinner lamellae. Accordingly, annealing results in a melting of the original crystallites even at moderate strains where the stress-induced fragmentation and recrystallization just sets in and generates a distinctly different form of lamellar stacks aligned along the drawing direction. It was found that the lamellae newly formed during stretching at moderate strains remain stable at lower temperature. Only at a very high annealing temperature of 120 degrees C can they be melted, leading to an isotropic distribution of the lamellar structure.

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Nanometer-scale plowing friction and wear of a polycarbonate thin film were directly measured using an atomic force microscope (AFM) with nanoscratching capabilities. During the nanoscratch tests, lateral forces caused discrepancies between the maximum forces for the initial loadings prior to the scratch and the unloading after the scratch. In the case of a nanoscratch test performed parallel to the cantilever probe axis, the plowing friction added another component to the moment acting at the cantilevered end compared to the case of nanoindentation, resulting in an increased deflection of the cantilever. Using free-body diagrams for the cases of nanoindentation and nanoscratch testing, the AFM force curves were analyzed to determine the plowing friction during nanoscratch testing. From the results of this analysis, the plowing friction was found to be proportional to the applied contact force, and the coefficient of plowing friction was measured to be 0.56 +/- 0.02. Also, by the combination of nanoscratch and nanoindentation testing, the energetic wear rate of the polycarbonate thin film was measured to be 0.94 +/- 0.05 mm(3)/(N m).

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Ultra high molar mass polyethylene (UHPE) powder as polymerized in a slurry process has been studied, in its nascent state, after recrystallization on rapid cooling from the melt and after hot compression molding to a film, by DSC, effect of annealing the recrystallized specimen at 120 similar to 130 degreesC, morphology by polarizing optical microscopy and small angle X-ray scattering. Based on the experimental results obtained the macromolecular condensed state of the nascent UHPE powder is a rare case of a multi-chain condensed state of non-interpenetrating chains, involving interlaced extended chain crystalline layers and relaxed parallel chain amorphous layers. On melting, a nematic rubbery state of nanometer size domain resulted. The nematic-isotropic transition temperature was judged from literature data to be at least 220 degreesC, possibly higher than 300 degreesC, the exact temperature is however not sue because of chain degradation at such high temperatures. The recrystallization process from the melt is a crystallization from a nematic rubbery state. The drop of remelting peak temperature by 10 K of the specimen recrystallized from its melt as compared to the nascent state has its origin in the decrease both of the crystalline chain stem length and of the degree of crystallinity. The remelting peak temperature could be returned close to that of the nascent state by annealing at 120 similar to 130 degreesC.

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Based on field survey, laboratory testing and numerical modeling, engineering characteristics of undisturbed loess and the mechanism of long-runout loess landslides caused by underground water level rise, as well as the formation conditions and spatial distribution of landslides, are systematically studied and analyzed. Loess landslides at south Plateau of Jingyang County are mainly classified as flowslide, slide and fall. Flowslide is the main type characteristic of high velocity, long runout and multi-stages. The steep relief composed of loose structured loess-old aged soil serials and the rise of groundwater table are the predominant conditions for landslides in the study area. To study loess mechanic poperties and loess landslides mechanisims, isotropically and anisotropically consolidated undrained compression(ICU and ACU) tests and constant-deviator-drained compression (CQD) tests were carried out on undisturbed samples. The results of undrained compression tests performed at the in-situ stress level show that the soils are of consistently strain-softening in the stress-strain relations and cause high excess pore pressure. The steady-state line and the potential region of instability are obtained from ICU and ACU test results. A necessary condition for liquefaction is that the soil state initially lies in or is brought into the potential instability region. In addition, a strong strain-softening model is also formed. CQD tests demonstrate that the mobilized friction angle is far less than the steady-state angle and that the soil experiences undrained contractive failure suddenly at very small strains when its stress path during drained loading tries to cross the potential instability region,thus validates the proposed instability region. Based on the location of the region of potential instability and the stress state of slope soil, a method of static liquefaction analysis is proposed for loess landslides caused by rise in groundwater table. Compared with other liquefaction analysis methods, this method overcomes the limitations inherent in conventional slope stability method and undrained brittleness index method. Triaxial tests composed of constant water content (CW) and wetting tests at constant deviator stress are performed on undisturbed unsaturated samples. The stress-strain relation of CW tests takes on strain-hardening behavior; The results of wetting tests at constant deviator stress designed to study the mechanics of failure of unsaturated loess caused by an increase in the degree of saturation (wetting) shows that a contractive failure occurs in the undisturbed samples. On the basis of the above triaxial test results, the initiation of static liquefaction is presented for long-runout loess landslides caused by rise in groundwater table, that is, the loess slope soil gradually transfer from unsaturated to saturated state under the infiltration of irrigation. A contractive failure occurs in the local region at very small strain by increasing the pore-water pressure at constant deviator stresses under drained conditons. It is the contractive failrue resulting from rise of pore pressure that leads to high excess pore pressure in the neighbour soil which reduces shear resistance of soil. The neighbour soils also fail due to the rapid increase in pore-water pressure. Thus a connected failure surface is developed quickly and a flowslide occurs. Based on the saturated-unsaturated seepage theory, transient seepage is computed using the finite element method on loess slope under groundwater table rise. Pore-water pressure distribution for every time step after irrigation are obtained. The phreatic surface in the slope increases with the groundwater table. Pore-water pressure distribution within 8m above the phreatic surface changes very quickly,but the water content and pore water pressure in the region ranging from 8m above the phreatic surface up to ground surface is almost not affected and the matric suction usually is kept at 100~120 kPa. Based on the results of laboratory tests and seepage flow analysis, the development process of loess landslide is modeled considering groundwater table rise. The shearing plastic zone first occurs at the slope toe where the soil is soaked for long term during rise in groundwater table. As irrigation continues, the shearing plastic zone gradually extends to the interior soils, with the results that the tensile plastic zone occurs at the slope crown. As time goes on, both the shearing plastic zone and tensile plastic zone continue to extend. Then a connected plastic zone is formed and fowslide occurs. In comparision to laboratory test results, the results of numerical simulation quite well verify the presented mechanism of static liquefaction of long-runout loess landslides caused by rise in groundwater table.

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This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in an infinite piezoelectric or on the interface of piezoelectric bimaterials. For homogeneous materials it is found that the normal electric displacement D-2, induced by the crack, is constant along the crack faces which depends only on the remote applied stress fields. Within the crack slit, the perturbed electric fields induced by the crack are also constant and not affected by the applied electric displacement fields. For bimaterials, generally speaking, an interface crack exhibits oscillatory behavior and the normal electric displacement D-2 is a complex function along the crack faces. However, for bimaterials, having certain symmetry, in which an interface crack displays no oscillatory behavior, it is observed that the normal electric displacement D-2 is also constant along the crack faces and the electric field E-2 has the singularity ahead of the crack tip and has a jump across the interface. Energy release rates are established for homogeneous materials and bimaterials having certain symmetry. Both the crack front parallel to the poling axis and perpendicular to the poling axis are discussed. It is revealed that the energy release rates are always positive for stable materials and the applied electric displacements have no contribution to the energy release rates.

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This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

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From St15 micro-carbon deep drawing steel sheets, two sets of samples with (r) over bar variant and Deltar constant, and (r) over bar constant and Deltar variant, were selected to carry out texture measurement and ODF analysis. A description of the texture characteristics and an investigation on the effect of the main textures on the (r) over bar and Deltar values were given. The results show that in the tested steel sheets no desired gamma < 111 > parallel to ND orientation line appears but gamma' orientation line located at <()over bar>=0-90 degrees, theta =19 degrees and phi =45 degrees, and L orientation line located around gamma < 111 > parallel to ND orientation line which spirally rotates from Psi =0 degrees, theta =54.7 degrees and phi =62.7 degrees to Psi =90 degrees, theta =40 degrees and phi =45 degrees occur. Among them, the L orientation line has a main influence on the (r) over bar value and the stronger the texture density, the higher the (r) over bar value is, but is somewhat detrimental to the Deltar value; at the same time, the gamma' orientation line has a major effect on the Deltar value in an opposite way, but is somewhat deteriorative to the (r) over bar value. A strong L orientation line superposed by a relatively strong gamma' orientation line may produce fine (r) over bar and Deltar values.