RBAC实施中国墙策略及其变种的研究

中国墙策略的目的是防止在有竞争关系的企业间访问信息导致的利益冲突.著名的中国策略模型包括Brewer等人提出的BN模型和Sandhu提出的基于格访问控制模型实施的中国墙模型.然而这些模型都存在严重的缺陷:灵活性不够或者实施不方便.RBAC是目前主流的访问控制模型,该模型的特点是策略中立.基于RBAC模型全面研究了实施中国墙策略及其各种变种策略的方法,利用角色体系和RBAC的约束机制,给出了具体的构造方法,讨论了这些构造中约束的形式化描述方法.与传统的中国墙模型相比,更加灵活,并可在支持RBAC的系统中直接实施.

Reflection of shock-wave in pur foam from rigid wall

Keller proposed that a building, a mechanical installation or a body wrapped bya layer of foam plastics may be an efficient means for protection from damage ofblast wave. However, the practical effect was beyond expectation. For example, agunner wearing the foam plastics-padded waistcoat was injured more seriously by theblast wave from a muzzle. Monti took the foam plastics as homogeneous two-phasemedium and analyzed it with the theory of dusty flow. The obtained results showthat the peak pressure behind the reflected shock wave from rigid wall with foamcoat exceeds obviously that without foam coat under the same condition. Gel'fand,Patz and Weaver made experimental observations by means of shock tubes and veri-

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500 degrees C with a pressure of 40 Torr by using SiH4+C2H4+H-2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.

Growth and characterization of 4H-SiC by horizontal hot-wall CVD

4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wall chemical vapor deposition (CVD) system, which was built in the author's group. The typical growth rate was 2 mu m/h at a pressure of 40 Torr. The background donor concentration has been reduced to 2.3 x 10(15) cm(-3) during a prolonged growth run. It confirmed the idea that the high background concentration of thin films was caused by the impurities inside the susceptor and thermal insulator The FWHM of x-ray co-rocking curves show 9 similar to 15 aresecs in five different areas of a 32-mu m-thick 4H-SiC epilayer The free exciton peaks dominated in the near-band-edge low-temperature photoluminescence spectrum (LTPL), indicating high crystal quality.

Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H_2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction （XRD） ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC（200） and （111） peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.

Studies of a scintillator-bar detector for neutron wall at externaltarget facility

To achieve a better time resolution of a scintillator-bar detector for a neutron wall at the external target facility of HIRFL-CSR,we have carried out a detailed study of the photomultiplier,the wrapping material and the coupling media. The timing properties of a scintillator-bar detector have been studied in detail with cosmic rays using a high and low level signal coincidence. A time resolution of 80 ps has been achieved in the center of the scintillator-bar detector.

Study of the LED based light calibration system for neutron wall detector

The light calibration system is one of the key components of Neutron Wall detector. It is used to calibrate the electronics and to monitor the long-term stability of the detector modules. With the detaile investigations, a calibration system with high-power LED (3W) driven by the fast pulses has been carried out. It is also tested together with the detector module of the Neutron Wall and the result of the preliminary calibration demonstrates that it fulfills the needs. It's a new design proposal to the light calibration system of the fast scintillator detector.

Monte Carlo simulation of the neutron detection wall at RIBLL II in HIRFL-CSR

With the construction of the new Radioactive Ion Beam Line in Lanzhou (RIBLL II) which connects the CSRm and the CSRe, an experimental setup for physics research is highly required. A large area neutron detection wall is the main part of the setup. This paper introduced the detection principle of the neutron detection wall and the Monte-Carlo simulation of its design under the environment of the Geant4 toolkit. We presented the final design with the optimized parameters and the performance of the wall.

Characteristics of the sampling paddle modules of neutron wall from the cosmic ray test

In the construction of a large area neutron detector (neutron wall) that is used to detect neutrons at GeV energies, the performances of all the sampling paddle modules prepared for the neutron wall are investigated with a specially designed test bench. Tested by cosmic rays, an average intrinsic time resolution of 222.5 ps is achieved at the center of the modules. The light attenuation length and the effective speed of the light in the module are also investigated.

Micro-shock waves generated inside a fluid jet impinging on plane wall

An Nd:glass laser pulse (18 ns, 1.38 J) is focused in a tiny area of about 100-mum diam under ambient conditions to produce micro-shock waves. The laser is focused above a planar surface with a typical standoff distance of about 4 mm, The laser energy is focused inside a supersonic circular jet of carbon dioxide gas produced by a nozzle with internal diameter of 2.9 mm and external diameter of 8 mm, Nominal value of the Mach number of the jet is around 2 with the corresponding pressure ratio of 7.5 (stagnation pressure/static pressure at the exit of the nozzle), The interaction process of the micro-shock wave generated inside the supersonic jet with the plane wall is investigated using double-pulse holographic interferometry. A strong surface vortex field with subsequent generation of a side jet propagating outward along the plane wail is observed. The interaction of the micro-shock wave with the cellular structure of the supersonic jet does not seem to influence the near surface features of the flowfield. The development of the coherent structures near the nozzle exit due to the upstream propagation of pressure waves seems to be affected by the outward propagating micro-shock wave. Mach reflection is observed when the micro-shock wave interacts with the plane wall at a standoff distance of 4 mm, The Mach stem is slightly deflected, indicating strong boundary-layer and viscous effects near the wall. The interaction process is also simulated numerically using an axisymmetric transient laminar Navier-Stokes solver. Qualitative agreement between experimental and numerical results is good.

Burst event detection in wall turbulence by WVITA method

Wavelet Variable Interval Time Average (WVITA) is introduced as a method incorporating burst event detection in wall turbulence. Wavelet transform is performed to unfold the longitudinal fluctuating velocity time series measured in the near wall region of a turbulent boundary layer using hot-film anemometer. This unfolding is both in time and in space simultaneously. The splitted kinetic of the longitudinal fluctuating velocity time series among different scales is obtained by integrating the square of wavelet coefficient modulus over temporal space. The time scale that related to burst events in wall turbulence passing through the fixed probe is ascertained by maximum criterion of the kinetic energy evolution across scales. Wavelet transformed localized variance of the fluctuating velocity time series at the maximum kinetic scale is put forward instead of localized short time average variance in Variable Interval Time Average (VITA) scheme. The burst event detection result shows that WVITA scheme can avoid erroneous judgement and solve the grouping problem more effectively which is caused by VITA scheme itself and can not be avoided by adjusting the threshold level or changing the short time average interval.

Mathematical Modeling of Near-Wall Flows of Two-Phase Mixture with Evaporating Droplets

In the framework of the two-continuum approach, using the matched asymptotic expansion method, the equations of a laminar boundary layer in mist flows with evaporating droplets were derived and solved. The similarity criteria controlling the mist flows were determined. For the flow along a curvilinear surface, the forms of the boundary layer equations differ from the regimes of presence and absence of the droplet inertia deposition. The numerical results were presented for the vapor-droplet boundary layer in the neighborhood of a stagnation point of a hot blunt body. It is demonstrated that, due to evaporation, a droplet-free region develops near the wall inside the boundary layer. On the upper edge of this region, the droplet radius tends to zero and the droplet number density becomes much higher than that in the free stream. The combined effect of the droplet evaporation and accumulation results in a significant enhancement of the heat transfer on the surface even for small mass concentration of the droplets in the free stream. 在双连续介质理论框架下,采用匹配渐进展开方法导出并求解了具有蒸发液滴的汽雾流中层流边界层方程,给出了控制汽雾流的相似判据。对于沿曲面的流动,边界层方程的形式取决于是否存在液滴的惯性沉积。给出了热钝体验点附近蒸汽。液滴边界层的数值计算结果。它们表明：由于蒸发,在边界层内近壁处形成了一个无液滴区域；在该区上边界处,液滴半径趋于零而液滴数密度急剧增高。液滴蒸发及聚集的联合效应造成了表面热流的显著增加,甚至在自由来流中液滴质量浓度很低时此效应依然存在。

Conjugate Model for Heat and Mass Transfer of Porous Wall in the High Temperature Gas Flow

Heat and mass transfer of a porous permeable wall in a high temperature gas dynamical flow is considered. Numerical simulation is conducted on the ground of the conjugate mathematical model which includes filtration and heat transfer equations in a porous body and boundary layer equations on its surface. Such an approach enables one to take into account complex interaction between heat and mass transfer in the gasdynamical flow and in the structure subjected to this flow. The main attention is given to the impact of the intraporous heat transfer intensity on the transpiration cooling efficiency.