Diffraction at 8-keV x-rays of Bragg-Fresnel optics

The basic elements of Bragg-Fresnel multilayer optics are multilayer gratings. In this paper, the fabrication process for the simplest Bragg-Fresnel multilayer optics is given; the diffraction measurements at 8-keV x rays of multilayer gratings are presented; and the measurement results in the diffraction spectrum are analyzed and discussed in detail. (C) 1996 Society of Photo-Optical Instrumentation Engineers.

Nonlinear X-wave formation and conical emission at different powers of a femtosecond laser pulse in water

Nonlinear X-wave formation at different pulse powers in water is simulated using the standard model of nonlinear Schrodinger equation (NLSE). It is shown that in near field X-shape originally emerges from the interplay between radial diffraction and optical Kerr effect. At relatively low power group-velocity dispersion (GVD) arrests the collapse and leads to pulse splitting on axis. With high enough power, multi-photon ionization (NIPI) and multi-photon absorption (MPA) play great importance in arresting the collapse. The tailing part of pulse is first defocused by MPI and then refocuses. Pulse splitting on axis is a manifestation of this process. Double X-wave forms when the split sub-pulses are self-focusing. In the far field, the character of the central X structure of conical emission (CE) is directly related to the single or double X-shape in the near field. (c) 2007 Elsevier B.V. All rights reserved.

Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1-x strained layers

A constant amount of Ge was deposited on strained GexSi1-x layers of approximately the same thickness but with different alloy compositions, ranging from x = 0.06 to x = 0.19. From their atomic-force-microscopy images, we found that both the size and density of Ge islands increased with the Ge composition of the strained layer. By conservation of mass, this implies that these islands must incorporate material from the underlying strained layer. (C) 2000 American Institute of Physics. [S0003-6951(00)03529-4].

Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x

A numerical model that combines mass transport and surface kinetics was applied, for the first time, to the chemical vapor epitaxy of GexSi1-x. The temperature, velocity and concentration fields were calculated from the conservation equations for energy, momentum and species coupled with the boundary conditions on the growth surface which were determined by surface kinetics. The deposition rates of Si and Ge were assumed to be limited, respectively, by surface kinetics and mass transport. A theoretical relation between the initial conditions and the Ge composition in the solid was established. The calculated growth rate as well as the Ge composition in the solid and its dependence on growth temperature agree well with experimental data.

Measurement of 16O5+ Induced L X-Ray Production Cross Sections for Gold

The characteristic Ll, Lα, Lβ and Lγx-rays of Au and energy shifts produced by 20–50MeV 16O5+ beams on a thick Au ilm are measured with a Si (Li) detector. Cross-section ratios of σ(Ll)/σ(Lα), σ(Lβ)/σ(Lα) andσ(Lγ)/σ(Lα) versus O5+ energy show that consistent calculations yield considerably better agreements. Energy shifts Ll, Lα, Lβ and Lγ x-rays of Au target increase with more incidence energy. The main application for these measurements is multi-element trace analysis through particle induced x-ray emission.