White light emission from fiber pigtailed laser module

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm(2). The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.

Silicon-on-insulator thermo-optic variable attenuator module with fast response

A thermo-optic variable optical attenuator module composed of a silicon-on-insulator attenuator chip and driving circuit was designed and fabricated. The module exhibited a maximum attenuation of 21.8 dB and a response time of 10 mu s. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE

A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s(-1) optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s(-1) non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.

Electroabsoorption-modulated laser light-source module using selective area growth for 10 Gb/s transmission

In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 x 10(2) Pa) selective area growth ( SAG) MOCVD technique. Superior device performances have been obtained, sue h as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure (22 x 102 Pa) SAG method.

Uncooled Submarine Pump Laser Module at 980 nm

We present a new generation 980 nm submarine pump module that consists of a hermitically sealed 8-pin ceramic MiniDIL package without thermo-electric cooler.

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.

VCSEL-based parallel optical transmission module

This paper describes the design process and performance of the optimized parallel optical transmission module. Based on 1x12 VCSEL (Vertical Cavity Surface Emitting Laser) array, we designed and fabricated the high speed parallel optical modules. Our parallel optical module contains a 1x12 VCSEL array, a 12 channel CMOS laser driver circuit, a high speed PCB (Printed Circuit Board), a MT fiber connector and a packaging housing. The L-I-V characteristics of the 850nm VCSEL was measured at the operating current 8mA, 3dB frequency bandwidth more than 3GHz and the optical output 1mW. The transmission rate of all 12 channels is 30Gbit/s, with a single channel 2.5Gbit/s. By adopting the integration of the 1x12 VCSEL array and the driver array, we make a high speed PCB (Printed Circuit Board) to provide the optoelectronic chip with the operating voltage and high speed signals current. The LVDS (Low-Voltage Differential Signals) was set as the input signal to achieve better high frequency performance. The active coupling was adopted with a MT connector (8 degrees slant fiber array). We used the Small Form Factor Pluggable (SFP) packaging. With the edge connector, the module could be inserted into the system dispense with bonding process.

808-nm fiber coupled module with a CW output power up to 130 W

A fiber coupled module is fabricated with integrating the emitting light from four laser diode bars into multimode fiber bundle. The continuous wave (CW) output power of the module is about 130 W with a coupling efficiency of around 80%. The output power is very stable after the temperature cycling and vibration test. No apparent power decrease has been observed as the device working continuously for 500 h.

A High Power Light Emitting Diode Module for Projection Display Application

Electron. Manuf. Packag. Technol. Soc. Chin. Inst. Electron.; IEEE Compon., Packag., Manuf. Technol. Soc. (IEEE-CPMT); Xidian University

Two-dimensional simulation of inductive plasma sources with self-consistent power deposition

A time averaged two-dimensional fluid model including an electromagnetic module with self-consistent power deposition was developed to simulate the transport of a low pressure radio frequency inductively coupled plasma source. Comparsions with experiment and previous simulation results show, that the fluid model is feasible in a certain range of gas pressure. In addition, the effects of gas pressure and power input have been discussed.

陶瓷晶须增强铝基复合材料初始段性能预测

本文利用挤铸造方法结合热压的方法制备了Al_(18)B_4O_(33)w/Al和SiCw/Al复合材料，实现了对增强体取向的调整。利用SEM在位观测、MTS宏观拉伸等实验方法研究了复合材料的细观结构、细观损伤演化规律和材料的宏观性能。通过理论分析、数值计算，结合实验的方法，定量地讨论了材料性能和其微观结构参数之间的关系，定性地总结了短纤维增强金属基复合材料的细观损伤演化规律。经过分析和实验，阐明了热挤压对短纤维增强金属基复合材料增强体空间取向性（取向密度）的影响；讨论了在短纤维增强金属基复合材料中宏观应变和基体、增强体应变的关系；并且进一步研究了密排、多取向群体短纤维增强体的应变，在材料处于弹性和塑性阶段的演化规律；提出了利用增强体轴向应变和材料宏观应变在该方向的分量之比值λ_f来描述增强体增强效果，给出了λ_f在材料承载过程中的演化规律；总结了短纤维增强金属基复合材料的性能（弹性模量）和晶须空间取向之间的关系；利用修正了的混合定律比较好地预测了短纤维增强金属基复合材料的弹性模量；并且进一步预测了短纤维增强金属基复合材料的弹塑性性能。

Numerical Study On Transient Flow In The Deep Naturally Fractured Reservoir With High Pressure

According to the experimental results and the characteristics of the pressure-sensitive fractured formation, a transient flow model is developed for the deep naturally-fractured reservoirs with different outer boundary conditions. The finite element equations for the model are derived. After generating the unstructured grids in the solution regions, the finite element method is used to calculate the pressure type curves for the pressure-sensitive fractured reservoir with different outer boundaries, such as the infinite boundary, circle boundary and combined linear boundaries, and the characteristics of the type curves are comparatively analyzed. The effects on the pressure curves caused by pressure sensitivity module and the effective radius combined parameter are determined, and the method for calculating the pressure-sensitive reservoir parameters is introduced. By analyzing the real field case in the high temperature and pressure reservoir, the perfect results show that the transient flow model for the pressure-sensitive fractured reservoir in this paper is correct.

The gated integration technique for the accurate measurement of the autocorrelation function of speckle intensities scattered from random phase screens

A new approach based on the gated integration technique is proposed for the accurate measurement of the autocorrelation function of speckle intensities scattered from a random phase screen. The Boxcar used for this technique in the acquisition of the speckle intensity data integrates the photoelectric signal during its sampling gate open, and it repeats the sampling by a preset number, in. The average analog of the in samplings output by the Boxcar enhances the signal-to-noise ratio by root m, because the repeated sampling and the average make the useful speckle signals stable, while the randomly varied photoelectric noise is suppressed by 1/ root m. In the experiment, we use an analog-to-digital converter module to synchronize all the actions such as the stepped movement of the phase screen, the repeated sampling, the readout of the averaged output of the Boxcar, etc. The experimental results show that speckle signals are better recovered from contaminated signals, and the autocorrelation function with the secondary maximum is obtained, indicating that the accuracy of the measurement of the autocorrelation function is greatly improved by the gated integration technique. (C) 2006 Elsevier Ltd. All rights reserved.

大功率半导体激光器二维阵列模块特性分析

根据固体激光器抽运的技术要求，设计了一种具有水冷装置的大功率半导体激光器二维阵列模块，并对半导体激光器热沉和致冷系统的热流进行了分析。在不同占空比下，对该模块进行了测试与分析。该模块的中心波长为810nm，光谱半峰全宽（FWHM）为2．5nm，工作电流为110A（200μs，10％占空比），循环水温为15℃时输出峰值功率为280W。结果表明，该封装结构在占空比小于5％时器件工作特性良好，在10％占空比F也可正常工作。利用该模块可以组合成多种几何结构、功率更高的半导体激光器组件。