126 resultados para CURVED EDGES

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The novel phase field model with the "polymer characteristic" was established based on a nonconserved spatiotemporal Ginzburg-Landau equation (TDGL model A). Especially, we relate the diffusion equation with the crystal growth faces of polymer single crystals. Namely, the diffusion equations are discretized according to the diffusion coefficient of every lattice site in various crystal growth faces and the shape of lattice is selected based on the real proportion of the unit cell dimensions.

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The crystallization detail of polyethylene (PE) has been scarcely studied via in-situ approach since it is an extremely fast process. In this work, optical microscopy is used to investigate crystallization details and characteristics of windmill-like polyethylene crystals. It has been shown that the straight edges of the petals appear firstly and grow in pairs from their central junctions, which subsequently induce the surrounding domains in between each pairs of petals to nucleate and crystallize into twisted lamellar overgrowths. The remaining terrace-stacked lamellae which form curved edges of the petals start to develop only after the straight edges of the petals together with the twisted lamellar overgrowths have completed their growth. It is confirmed that the preferential growth direction of these petals are along crystallographic [113] axis, which has an angle of 65, with the typical direction along b-axis adopted also by the twisted lamellar overgrowths.

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Dynamics of single curved fiber sedimentation under gravity are simulated by using the lattice Boltzmann method. The results of migration and rotation of the curved fiber at different Reynolds numbers are reported. The results show that the rotation and migration processes are sensitive to the curvature of the fiber. (c) 2007 Elsevier Ltd. All rights reserved.

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In virtue of reference Cartesian coordinates, geometrical relations of spatial curved structure are presented in orthogonal curvilinear coordinates. Dynamic equations for helical girder are derived by Hamilton principle. These equations indicate that four generalized displacements are coupled with each other. When spatial structure degenerates into planar curvilinear structure, two generalized displacements in two perpendicular planes are coupled with each other. Dynamic equations for arbitrary curvilinear structure may be obtained by the method used in this paper.

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Dynamics of single curved fiber sedimentation under gravity are simulated by using the lattice Boltzmann method. The results of migration and rotation of the curved fiber at different Reynolds numbers are reported. The results show that the rotation and migration processes are sensitive to the curvature of the fiber. (c) 2007 Elsevier Ltd. All rights reserved.

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A wavelength division multiplexer (WDM) for 980/1550 nm based on planar curved waveguide coupler (CWC) is proposed. Compared with conventional parallel straight waveguide coupler (SWC), this structure has more flexibility with two variable parameters of bending radius R and minimum edge-to-edge spacing do, which are the two main parameters for the splitting ratio of coupler and decrease the complexity of device design and fabrication. Based on coupled mode theory (CMT) and waveguide theory, R and do of the WDM CWC are designed to be R = 13.28 m and d(0) = 4.39 mu m. The contrast ratio (CR) and insertion loss (IL) for 980 and 1550 nm are CR1 = 24.62 dB, CR2 = 24.56 dB and IL1 = 0.014 dB, IL2 = 0.015 dB, respectively. The 3D beam propagation method (BPM) is used to verify the validity of the design result. The influence of R and d(0) variations on the device performance is analyzed. For CR > 20 dB, the variation ranges of R and d(0) should be within -0.10 to +0.44 m and -0.05 to + 0.02 mu m, respectively. (c) 2006 Elsevier GmbH. All rights reserved.

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The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

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Planar graphite has been extensively studied by Raman scattering for years. A comparative Raman study of several different and less common non-planar graphitic materials is given here. New kinds of graphite whiskers and tubular graphite cones (synthetic and natural) have been introduced. Raman spectroscopy has been applied to the characterization of natural graphite crystal edge planes, an individual graphite whisker graphite polyhedral crystals and tubular graphite cones. Almost all of the observed Raman modes were assigned according to the selection rules and the double-resonance Raman mechanism. The polarization properties related to the structural features, the line shape of the first-order dispersive mode and its combination modes, the frequency variation of some modes in different carbon materials and other unique Raman spectral features are discussed here in detail.

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Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAs quantum wires were fabricated on the cleaved edge. Furthermore, atomic force microscopy demonstrates the diffusion of In atoms is strong toward the [00 (1) over bar] direction on the (110) surface.

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The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and two-dimensional plane wave expansion method. The variations of waveguide-mode edges with structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constrant, r/Lambda, is fixed and the lattice constant of photonic crystal, Lambda, increases, the waveguide-mode edges shift to longer wavelengths. When Lambda is fixed and r/Lambda increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Lambda and Lambda are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

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A simple method based on the effective index method was used to estimate the minimum bend radii of curved SOI waveguides. An analytical formula was obtained to estimate the minimum radius of curvature at which the mode becomes cut off due to the side radiative loss.