Elimination of loading reverberation in the split hopkinson torsional bar

The loading reverberation is a multiple wave effect on the specimen in the split Hopkinson torsional bar (SHTB). Its existence intensively destroys the microstructure pattern in the tested material and therefore, interferes with the study correlating the deformed microstructure to the macroscopic stress-strain response. This paper discusses the problem of the loading reverberation and its effects on the post-mortem observations in the SHTB experiment. The cause of the loading reverberation is illustrated by a stress wave analysis. The modification of the standard SHTB is introduced, which involves attaching two unloading bars at the two ends of the original main bar system and adopting a new loading head and a couple of specially designed clutches. The clutches are placed between the main bar system and the unloading bars in order to lead the secondary loading wave out of the main bar system and to cut off the connection in a timely manner. The loading head of the standard torsional bar was redesigned by using a tube-type loading device associated with a ratchet system to ensure the exclusion of the reflected wave. Thus, the secondary loading waves were wholly trapped in the two unloading bars. The wave recording results and the contrasting experiments for examining the post-mortem microstructure during shear banding both before and after the modification highly support the effectiveness of the modified version. The modified SHTB realizes a single wave pulse loading process and will become a useful tool for investigating the relation between the deformed microstructure and the macroscopic stress-strain response. It will play an important role especially in the study of the evolution of the microstructure during the shear banding process. (C) 1995 American Institute of Physics.

A simple ac bridge for detecting small resistance change

A simple ac resistance bridge is proposed. The stability of the design is better than 10(-6), which is especially suitable for detecting tiny changes of resistance. An example of magnetoresistance measurement for a 220 nm Au film shows the good performance of the bridge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3202284]

Note: A time-resolved Kerr rotation system with a rotatable in-plane magnetic field

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CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.