Effect of storage time and cryoprotectant concentrations on the fertilization rate and hatching rate of cryopreserved sperm in red seabream (Pagrus major Temminck & Schlegel, 1843)

This study examined the effects of storage time and cryoprotectant concentrations on the post-thaw sperm of red seabream, Pagrus major. Sperm treated with 12%, 15%, 18% and 21% DMSO were cryopreserved for 10, 30, 60 and 360 days, and fertilization and hatching rates were analysed. For all groups, there were no differences in the fertilization rates and hatching rates between sperm cryopreserved for < 60 days and fresh sperm (98.8 +/- 0.8%, 96.4 +/- 1.3%). However, for sperm cryopreserved for 360 days, both fertilization rates (88.6 +/- 3.0% to 7.0 +/- 1.9%) and hatching rates (79.4 +/- 7.2% to 3.3 +/- 0.8%) decreased drastically. Furthermore, the cryoprotectant concentrations affected sperm quality significantly (P < 0.05). When cryopreserved for 360 days, sperm treated with 15% DMSO obtained the best results compared with other concentrations. We suggest that 15% DMSO may be an effective cryoprotectant for long-term sperm cryopreservation of red seabream.

Time response of optical switching properties of Sb thin films under focused laser pulses

The time response of optical switching properties of Sb thin films under focused laser pulses is investigated. The results show that the response course can be divided into onset, opening, and closing stages. Formulas for their lengths are given. The onset and opening times decrease with increasing pumping light power density. The closing time is about 150 ns. For optical memory, if the power density of the readout and recording lasers changes from 5 x 10(9) to 15 x 10(9) W/m(2), the onset time changes from 2.5 to 0.30 mus, and the opening time is on the nanosecond scale. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

沉积参量及时效时间对SiO2薄膜残余应力的影响

SiO2薄膜由电子束蒸发方法沉积而成。用GPI数字波面光学干涉仪测量了不同沉积条件下玻璃基底镀膜前后曲率半径的变化，并确定了SiO2薄膜中的残余应力。在其他条件相同的情况下，当沉积温度由190℃升高到350℃时，SiO2薄膜中的压应力由一156MPa增大为-289MPa。氧分压由3．0×10^-3Pa升高到13．0×10^-3Pa时，SiO2薄膜中的应力由-223．5MPa变为20．4MPa。通过对薄膜折射率的测量，发现薄膜的堆积密度随沉积条件的改变也发生了规律性的变化。应力的变化主要是由于沉积时蒸发粒子

Photon-storage in optical memory cells based on a semiconductor quantum dot-quantum well hybrid structure

We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100ms has been obtained at a temperature of 10 K while the switching speed reaches the order of ten megahertz.

Storage of photoexcited electron-hole pairs in an AlAs/GaAs heterostructure created by electron transfer in real and kappa spaces

The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transferring electrons in both real and k spaces through resonant Gamma - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.