染色体加倍对忍冬生物学性状及其生态适应性的影响

忍冬（Lonicera japonica Thunb.）属忍冬科忍冬属，是一种重要的药用植物，其花蕾称为金银花（Flos Lonicerae），在我国已有1000多年的药用历史，具有清热解毒、凉散风热等功效。我们利用秋水仙素诱导二倍体“大毛花”品种茎尖选育出同源四倍体“九丰一号”品种，并在生产中发现花蕾产量显著提高，而药效成份含量是否发生变化了呢？四倍体忍冬表现出典型的器官巨大性，这些变化是否与其较强生态适应性之间存在联系呢？染色体加倍增强了忍冬的生态适应性，其生态修复功能如何呢？在本研究中，主要从以下几个方面进行了探讨：（1）染色体加倍对其叶片，茎、花蕾和花蕾产量及其药效成份等生物学性状的影响;（2）染色体加倍后植物对水分胁迫的响应;（3）染色体加倍后植物对热胁迫的响应;（4）除上述两个品种外，增加一个变异品种“红银花”，探讨3个忍冬品种对退化生态系统的修复功能。主要结果如下： 1. 通过测定根尖细胞染色体数目和使用流式细胞仪分析茎尖细胞DNA含量，表明四倍体忍冬（2n = 4x = 36）确实来自二倍体忍冬（2n = 2x = 18）的染色体加倍。四倍体忍冬气孔细胞大小显著大于二倍体，而气孔密度显著低于二倍体。四倍体忍冬没有光合“午休”，而二倍体存在明显的光合“午休”，这可能与其存在抗高温的叶片解剖结构特性有关。四倍体忍冬叶片较二倍体变大、变厚、变浓绿（较高叶绿素含量）。与二倍体相比，四倍体忍冬单位叶面积重量显著增高，表明其具有较强的生态适应性。四倍体忍冬单个花蕾的鲜重和干重均显著大于二倍体。连续3年的花蕾产量调查表明，四倍体显著高于二倍体。染色体加倍使其茎干粗壮、节间变短、新梢上着生花蕾数目增多及单个花蕾变大，这是其花蕾高产的生物学基础。对金银花的药效成份而言，染色体加倍不影响绿原酸的含量，但增加了木犀草苷的含量。结果表明，染色体加倍能增加金银花的产量和药效成份的含量，建议四倍体忍冬在药材生产中推广应用。 2. 水分胁迫显著降低二倍体和四倍体忍冬叶片的净光合速率、气孔导度和蒸腾速率。水分胁迫也降低电子传递速率、光系统II实际量子产量和光化学猝灭，而增加非光化学猝灭、总可溶性糖、脯氨酸和丙二醛的含量。四倍体忍冬对水分胁迫的响应表现为其叶片水势、气体交换、叶绿素荧光和有关代谢物含量的变化程度低于二倍体，并且复水后其恢复能力快于二倍体，表明染色体加倍增强了忍冬的抗旱能力。分析其主要原因，可能是由于四倍体植株总叶面积减少、单位叶面积重量增加、叶片表皮细胞和栅栏组织增大以及叶片表皮毛较浓密等形态解剖结构特性有关。结果表明，染色体加倍能增加忍冬植物的抗旱能力，而使其具有较强的生态适应性。 3. 二倍体和四倍体忍冬受48 ºC热胁迫处理6 h和恢复10 h，以及离体叶片45 ºC，50 ºC，55 ºC 水浴热胁迫3 min，应用叶绿素荧光成像系统研究了它们对热胁迫的响应。热胁迫显著降低了两个品种叶片的最大光化学效率、电子传递速率、光系统II实际量子产量和光化学猝灭，降低了四倍体的非光化学猝灭，而增加了二倍体的非光化学猝灭。热胁迫增加了两个品种叶片的总可溶性糖、脯氨酸和丙二醛的含量。四倍体受热胁迫的叶绿素荧光参数和有关代谢物的响应程度低于二倍体，以及其恢复程度快于二倍体，表明染色体加倍提高了抗热性。此外，叶绿素荧光成像的异质性也表明，四倍体的抗热能力大于二倍体。进一步的叶片解剖结构分析表明，四倍体叶片的表皮细胞变大、栅栏组织增厚、表皮毛较浓密等特点，是其抗热性强的主要原因。 4.根据以上的研究结果，通过四倍体忍冬生态修复功能的野外试验证明染色体加倍后其生态适应性变化。在本研究中，针对北京市门头沟区大面积不同类型的废弃地急需恢复植被和景观的问题，在恢复生态学理念的指导下，综合运用集成技术，将3个忍冬品种植物用于这些退化生态系统的恢复。在王平镇的公路下边坡（以碎石和矿渣为主）、煤矿、石灰窑和采石场4种类型废弃地建立生态修复的试验示范区。结果表明，在4个废弃地类型上引进的3个金银花品种，具有使示范区快速复绿、当年成景和群落快速形成的潜力，并具有对不同退化迹地的适应能力和恢复效果，其中四倍体忍冬效果更好些，这主要与其形态解剖结构和较强的生态适应性有关。

替代燃料二甲醚的燃烧特性及其污染物甲醛的生成消耗机理研究

化石燃料的不可再生性决定了其不能长久为全球经济和科技的发展提供能源动力，从可持续发展和能源战略的角度考虑，能够替代石油及其衍生品的清洁替代燃料研究已经成为提高能源供应安全、改善环境污染问题、应对气候变化的重要措施，对替代燃料的研究和应用已经成为各方关注和开发的热点。 二甲醚(DME、CH3OCH3)是一种最简单的醚类，它不含C-C健，可以由天然气、煤、生物质燃料等大量制备，而且具有较高的辛烷值(55-60)，较低的碳氢化合物、CO排放，没有PM排放，因而被认为是一种非常有发展前景的发动机替代燃料，已经受到了广泛的关注。但是，在发动机燃用DME的实验研究表明，在其排气中有非常规污染物甲醛(HCHO)、乙醛(CH3CHO)，甲酸甲酯(HCOOCH3)等排放，这些有机污染物会对环境和人类健康产生严重的危害，在环保要求日益严格的趋势下，这就制约了二甲醚的规模化应用。因此，对二甲醚燃烧性能、氧化中间产物甲醛等的产生和排放机理、相关污染物抑制技术需要进行着重研究，这对二甲醚燃料规模化应用、相关二甲醚燃烧器设计、燃烧性能的优化以及污染物控制技术的研究等都有着重要的理论指导意义和参考价值。 为了充分理解二甲醚燃料的燃烧特性、非常规污染物甲醛的产生和消耗机理，本文以实验和二甲醚化学反应动力学机理为指导，对二甲醚预混燃烧的燃烧特性、相关污染物和甲醛产生和消耗的机理做了详细的研究；并针对二甲醚燃料的不同应用背景，对二甲醚燃料低温下的氧化和甲醛生成特性、DME与LPG掺混燃烧特性和甲醛生成消耗机理进行了深入的研究，具体工作有： 研究了二甲醚预混燃烧特性、火焰中甲醛等污染物的产生特性，建立了火焰中甲醛取样、测量的方法和实验平台。并对当量比和燃料流量对二甲醚预混燃烧的燃烧特性、甲醛生成特性影响进行了考察，实验结果表明二甲醚是一种优良的替代燃料，在二甲醚火焰中甲醛是其重要的中间产物，甲醛浓度分布与当量比和预混气流速密切相关。当量比一定时，随着预混气流速的增加，火焰中甲醛产生的范围变窄，且甲醛浓度峰值逐渐移向燃烧器出口，而甲醛产生的浓度峰值数值上相差不大，甲醛在形成峰值后被快速消耗，其浓度在0.1mm内下降到几乎为零；在二甲醚流量一定时，随着当量比的增加，火焰中产生了更多的甲醛，火焰中甲醛分布的范围也变宽，而且当量比越大，甲醛的消耗也变缓，在当量比为0.8时，甲醛浓度从峰值到被消耗距离变为2mm，远大于当量比0.6和0.7下0.1mm的消耗距离。 对二甲醚预混燃烧进行数值研究和化学动力反应机理分析后发现，在二甲醚燃烧中，二甲醚的氧化反应途径主要是通过脱氢生成CH3OCH2和在高温下的直接裂解反应而进行，其中脱氢反应是低温下二甲醚消耗的主要途径，而在高温反应阶段(T>1000K)，DME的直接裂解和燃料的脱氢反应共同起主导作用；非常规污染物甲醛通过DME脱氢产物CH3OCH2的裂解和外部氧化而生成，在高温时通过DME直接裂解后被氧化产生；甲醛的消耗反应则是通过与H、O、OH和CH3基的氧化反应而完成，其中与O、OH基的反应在燃烧中起主要作用。因此二甲醚燃烧中甲醛的抑制关键在燃烧中甲醛的消耗阶段，采取有效的技术措施，如优化燃烧器结构提高二甲醚燃烧室内的温度、在燃烧区保证充足的氧气供应等措施，加快甲醛的消耗速度以促进其被完全氧化，可以实现二甲醚燃烧中甲醛的零排放。 针对柴油发动机燃用DME燃料时，燃料在燃烧室停留时间过短，造成部分未燃二甲醚随尾气排放，对DME在低温下(<800K)的氧化特性和甲醛生成特性进行了实验研究。结果表明，二甲醚在200℃左右就开始发生氧化反应，在200~400℃温度范围内被氧化而生成大量中间产物甲醛，且在此温度范围内甲醛不易被氧化分解，而发动机尾气温度（一般在200~600℃之间）处于甲醛最易生成的范围，因此未燃二甲醚在尾气中发生低温氧化反应生成的甲醛，是发动机燃用DME而排放高浓度甲醛的重要来源。研究结论为柴油发动机燃用DME抑制非常规污染物甲醛的排放提供了新的参考。 DME作为替代燃料，部分替代及与其他石化系燃料掺混燃烧是目前的重要应用方向，对DME与LPG掺混燃烧特性和甲醛生成特性进行了实验研究，结果表明，在DME与LPG掺混燃烧中，固定当量比和燃料质量流量的条件下，两种燃料存在一个最佳掺混比，在此掺混比例下，混合燃料着火提前，燃料燃烧性能最佳；DME与LPG混合燃料中，二甲醚是燃烧中甲醛产生的主要来源，控制DME的完全氧化和燃烧是抑制DME与LPG掺混燃烧排放甲醛的主要途径，这为更好地应用DME与LPG混合燃料提供了参考。 能否清洁高效燃烧是决定替代燃料DME应用规模和途径中的关键任务，本文对DME燃烧特性、非常规污染物甲醛的生成排放特性、低温下DME的氧化特性、DME与LPG掺混燃烧特性的研究，从不用的应用方向和领域对DME清洁高效燃烧进行了探讨和研究，研究成果可以为清洁高效利用二甲醚、抑制甲醛排放，以及开发相关燃烧技术、燃烧器提供实验依据和理论指导。本文在DME燃烧特性和非常规污染物甲醛的产生与排放方面取得了具有创新性的研究结果。

耕地土壤交换性镁含量的空间变异性特征

利用地统计学和地理信息系统相结合的方法研究了沈阳市郊耕地土壤(0～20cm)交换性镁含量的空间变异性特征 ,绘制了交换性镁含量的空间分布图。结果表明 :土壤交换性镁含量符合正态分布 ,变异函数的最佳理论模型为球状模型 ,交换性镁含量具有中等的空间相关性(C0 与C0+C比值为55.0 %) ,但空间自相关距离较大(73.1km) ,影响其空间变异的结构性因子主要是成土母质、河流走向以及土壤类型。

电感耦合等离子体光谱和质谱法分析贻贝标准物质

采用电感耦合等离子体光谱和质谱法分析了贻贝标准物质,光谱法测定K、Na、ca、Mg、P、Al、Fe、Zn、Nn和Sr,质谱法测定As、B、Cd、Co、Cr、Cu、Ca、Ce、Mn、Mo、Ni、Pb、Se、Sr、U和V。在优化的工作条件下,测定了来自基体元素K、Na、Ca、P、Cl和C的多原子离子~(39)K~(16)O、~(39)K_2、~(40)Ar~(23)Na、~(43)Ca~(16)O、~(42)Ca~(16)O、~(44)Ca~(16)O、~(31)P~(16)O_2、~(40)Ar~(37)Cl、~(35)Cl~(16)O、~(37)Cl~(16)O和~(40)Ar~(12)C对~(55)Mn、~(78)Se、~(63)Cu、~(59)Co、~(58)Ni、~(60)Ni、~(75)As、~(77)Se、~(51)V、~(53)Cr和~(52)Cr的干扰系数以及HNO_3+H_2O_2(3+2)、HNO_3+HClO_4(3+0.5)和HNO_3+H_2SO_4(3+0.5)等3种样品消解方法在一些生物重要元素的同位素处产生的表观浓度。光谱法的检出限0.001～0.75mg/L;质谱法的检出限0....

Effect of 80.55 MeV/u(12)C(6+) ions on radiosensitivity and cell cycle of human hepatoma cell lines

In this paper, the relationship between radiosensitivity, cell cycle alteration and the change of apoptosis in different human hepatoma cell lines irradiated by heavy ions were studied with the aim of building up the base data for clinical therapy. Exponentially growing hepatoma cell lines were irradiated by 80.55 MeV/u(12)C(6+) ions at a dose of 0 Gy, 0.5 Gy, 1 Gy, 2 Gy, 4 Gy and 8 Gy. The radiosensitivity was assessed by means of the colony-forming assay. The DNA content, the percentage of each cell-cycle phase and the apoptosis rate were obtained with flow cytometry methods. After the irradiation, the SF2 (survival fraction at 2 gray) of SMMC-7721 cells were evidently lower than that of HepG2 cells. The S phase arrest, G2/M phase arrest delay and the apoptosis in the two hepatoma cell lines varied with the increase of the dose and repair time. The heavy ions could obviously kill the human hepatoma cell lines. Compared to HepG2 cells, SMMC-7721 cells were more radiosensitive to C-12(6+) ions.

1.55-mu m InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with lnGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 mum. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does. (C) 2004 Elsevier Ltd. All rights reserved.

High-efficiency reflective diffraction gratings in fused silica as (de)multiplexers at 1.55 mu m for dense wavelength division multiplexing application

We describe high-efficiency, high-dispersion reflection gratings fabricated in bulk fused Silica illuminated by incident lights in the C + L bands as (de)multiplexers for dense wavelength division multiplexing (DWDM) application. Based on the phenomenon of total internal reflection, gratings with optimized profile parameters exhibit diffraction efficiencies of more than 90% under TM- and TE-polarized incident lights for 101-nm spectral bandwidths (1520-1620 nm) and can reach an efficiency of greater than 97% for both polarizations at a wavelength of 1550 nm. Without loss of metal absorption, without coating of dielectric film layers, and independent of tooth shape, this new kind of grating should be of great interest for DWDM application. (C) 2005 Optical Society of America.

Improved fluorescence from Tm3+/Er3+/Ce3+ triply doped bismuth-silicate glasses for S+C-bands amplifiers

Fluorescence of Tm3+/Er3+ codoped bismuth-silica (BS) glasses and the sensitization of Ce3+ are investigated. It shows that Ce3+ codoping with Tm3+/Er3+ in BS glasses results in a quenching of Tm3+ ion emission from F-3(4) to the H-3(6) level. Consequently, the 1.47 mu m emission occurs after the population inversion between the H-3(4) and F-3(4) levels. Furthermore, the codoped glasses show the broad emission spectra over the whole S and C bands with full-width at half-maximum (FWHM) up to about 119nm, as it combines 1.55 mu m emission band of Er3+ with 1.47 mu m emission band of Tm3+ under 800nm excitation.

Spectroscopic properties of Er3+-doped tellurite glass for 1.55 mu m optical amplifier

Er3+-doped TeO2-BaO (Li2O, Na2O)-La2O3 tellurite glass system was prepared and their density, characteristic temperatures and optical properties were determined and investigated. For the TeO2-BaO-La2O3-Er2O3 system, composition with 10 mol% BaO presented the highest thermal stability and good infrared transmittance. Intense and broad 1.53 mu m infrared fluorescence were observed under 977 nm diode laser excitation and the most full width at half-maximum (FWHM) is similar to 60nm. According to absorption spectrum, we calculated the optical parameters by means of Judd-Ofelt and McCumber theory such as the fluorescence lifetimes which are about 2.72-3.25 ms and the maximum emission cross-sections which are similar to 1.0pm(2) at 1.531 mu m. The sigma(e) x FWHM value of composition with 10 mol% BaO for gain bandwidth is similar to 600 exceeding those in silicon and phosphate glasses. Our results indicated this kind of tellurite glasses could be used as an ideal host glass for optical amplifier. (c) 2005 Elsevier B.V. All rights reserved.

Effect of La3+ on microwave dielectric properties of (Pb0.45Ca0.55) (Fe0.5Nb0.5)O-3 ceramics

In this work, microwave dielectric properties of A-site substitution by La3+ in (Pb0.45Ca0.55) (Fe0.5Nb0.5) 03 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb0.45Ca0.55)(1-x) La-x] (Fe0.5Nb0.5)O-3(+) (P45CLFN) were improved because the solid solution of small amount of surplus La3+ with (Pb, Ca)(2+) could eliminate oxygen vacancies, and the formation of secondary phase (pyrochlore) was also caused by surplus La3+. The decreasing of dielectric constant with the increase of La3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q(f) values (7000 similar to 7300 GHz) are almost unchanged at x = 0.02 similar to 0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x 0.075 with Q(f) = 7267 GHz and K = 89. TCF of all specimens are within +/- 5 x 10(-6)degrees C-1.

Global distribution of Y-chromosome haplogroup C reveals the prehistoric migration routes of African exodus and early settlement in East Asia

The regional distribution of an ancient Y-chromosome haplogroup C-M130 (Hg C) in Asia provides an ideal tool of dissecting prehistoric migration events. We identified 465 Hg C individuals out of 4284 males from 140 East and Southeast Asian populations. We genotyped these Hg C individuals using 12 Y-chromosome biallelic markers and 8 commonly used Y-short tandem repeats (Y-STRs), and performed phylogeographic analysis in combination with the published data. The results show that most of the Hg C subhaplogroups have distinct geographical distribution and have undergone long-time isolation, although Hg C individuals are distributed widely across Eurasia. Furthermore, a general south-to-north and east-to-west cline of Y-STR diversity is observed with the highest diversity in Southeast Asia. The phylogeographic distribution pattern of Hg C supports a single coastal 'Out-of-Africa' route by way of the Indian subcontinent, which eventually led to the early settlement of modern humans in mainland Southeast Asia. The northward expansion of Hg C in East Asia started similar to 40 thousand of years ago (KYA) along the coastline of mainland China and reached Siberia similar to 15 KYA and finally made its way to the Americas. Journal of Human Genetics (2010) 55, 428-435; doi:10.1038/jhg.2010.40; published online 7 May 2010

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.

1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror

A 1.55 mum Ge islands resonant-cavity-enhanced (RCE) detector with high-reflectivity bottom mirror was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the back side of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mum. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement. (C) 2004 American Institute of Physics.

1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 mu m. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 mu m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3x10(-7) A/cm(2) at a bias of 0 V and 4.3x10(-5) A/cm(2) at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps. (c) 2005 American Institute of Physics.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.