Assessment of bursting detection methods with LES database of turbulent channel flows

Validated by comparison with DNS, numerical database of turbulent channel flows is yielded by Large Eddy Simulation (LES). Three conventional techniques: uv quadrant 2, VITA and mu-level techniques for detecting turbulent bursts are applied to the identification of turbulent bursts. With a grouping parameter introduced by Bogard & Tiedemann (1986) or Luchik & Tiederman (1987), multiple ejections detected by these techniques which originate from a single burst can be grouped into a single-burst event. The results are compared with experimental results, showing that all techniques yield reasonable average burst period. However, uv quadrant 2 and mu-level are found to be superior to VITA in having large threshold-independent range.

Comparison of Pax1/9 locus reveals 500-Myr-old syntenic block and evolutionary conserved noncoding regions

Identification of conserved genomic regions within and between different genomes is crucial when studying genome evolution. Here, we described regions of strong synteny conservation between vertebrate deuterostomes (tetrapods and teleosts) and invertebrat

第五届国际白细胞分化抗原会议及新命名的分化抗原

1993年11月3—7日在美国波士顿召开了第五届国际人白细胞分化抗原会议，与会代表共1000多名，大陆学者lO余名. 会议交流论文854篇. 全世界500多个实验室历经两年对1450个单克隆抗体进行了分析，鉴定出150个分子. 会议命名了48个新CD群和亚群，重新确定了14个原来命名的CD群. 详细资料请查白细胞分化抗原数据库(Leukocyte Differentia. tionntigen Database，LDAD)和由Schlossman，SF等主编的(Leukocyte Typing V：White cell diferentiation antigen)(1994)-书. 下表概括了新增加和变化的CD群。

抗辐射500门阵列的设计与制造

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SIMI 500综合业务通信系统

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.

Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

连续波500 W全固态Nd∶YAG激光器研究

研制了全国产化全固态半导体激光器(LD)抽运模块，Nd∶YAG激光输出功率达500 W。介绍了优化抽运模块结构参数的程度。从增益分布特性等方面，介绍了研究其输入-输出功率特性的实验装置，随着抽运功率的增加，Nd∶YAG激光输出以斜率效率47%线性增加，最大输出功率达到575 W，光-光转换效率达26.1%。采用He-Ne激光探测法实验测量了该抽运模块中的热透镜效应。通过测量热焦距，分析了其热透镜效应