Neuro-Stimulus Chip with Photodiodes Array for Sub-retinal Implants

A prototype neuro-stimulus chip for sub-retinal implants in blind patients affected by Age-related Macular Degeneration (AMD) or Retinitis Pigmentosa (RP) is presented in this paper. This retinal prosthetic chip was designed to replace the degenerated photoreceptor cells, and in order to stimulate directly the remaining healthy layers of retinal neurons. The current stimulus circuits are monolithic integrated with photodiodes (PD) array, which can convert the illumination on the eyes into bi-phasic electrical pulses. In addition, a novel charge cancellation circuit is used to discharge the electrodes for medical safty. The prototype chip is designed and fabricated in HJTC 0.18 mu m N-well CMOS 1P6M Mix-signal process, with a +/- 2.5 V dual voltage power supply.

A delay model for noise-induced bi-directional switching

Many biological systems can switch between two distinct states. Once switched, the system remains stable for a period of time and may switch back to its original state. A gene network with bistability is usually required for the switching and stochastic effect in the gene expression may induce such switching. A typical bistable system allows one-directional switching, in which the switch from the low state to the high state or from the high state to the low state occurs under different conditions. It is usually difficult to enable bi-directional switching such that the two switches can occur under the same condition. Here, we present a model consisting of standard positive feedback loops and an extra negative feedback loop with a time delay to study its capability to produce bi-directional switching induced by noise. We find that the time delay in the negative feedback is critical for robust bi-directional switching and the length of delay affects its switching frequency.

THE RELATIONSHIP AMONG OXYGEN-CONTENT, DEFECT DISTRIBUTION AND SUPERCONDUCTIVITY IN BISRCACUO SYSTEMS

The effect of oxygen content on superconductivity of the 2212 and 2223 phase has been studied. By comparing the excess oxygen, the modulation vector, the XRD patterns, and the electric resistivity of 2212 and 2223 phase samples obtained with different post-annealing conditions, i.e., annealing at 600-degrees-C or quenching from 860-degrees-C, it was found that the superconductivity is markedly influenced by both the defect distribution in non-Bi layers and the interstitial oxygens incorporated in the Bi-O layers. A tentative explanation for this is given.