V、Nb、Ta对促进Bi系超导体中2223相生成作用研究

自发现BiSrCaCuO超导体以来,为了稳定2223高T_C相结构、增加其在超导体中的含量,在该体系中引入掺杂元素Pb被公认是最有效的方法。我们系统研究了V~(5+)、Nb~(5+)、Ta~(5+)高价离子的单独掺入Bi系中对

Nb(Ba)加强Bi系中2223相生成作用研究

固相法合成系列名义组成为Bi_(2-x)Nb_xSr_2Ca_2Cu_3Oy(x=0—1.0)的样品,电学和磁学测量表明,当掺入x=0.2—0.3的Nb有明显加强2223相生成的作用,配比为Bi_(1.7)Nb_(0.3)Sr_2Ca_2Cu_3Oy时最佳;当掺Ba以部分取代Sr后有明显协同Nb促进22 23相生成的作用,比单掺Nb效果更为显著,其中以Bi_(1.7)Nb_(0.3)Sr_(1.8)Ba_(0.2)Ca_2Cu_3Oy为最优组成。热重分析(TGA)实验显示,掺Nb(Ba)后样品在～600°C出现吸氧增重;XPS中的O_(1s)峰显示掺Nb(Ba)后除～531eV的主峰外,在～529eV的肩峰更加明显;讨论了Nb(Ba)对晶体结构的可能影响。

Bi系铜酸盐的固体化学性质与超导性能

本论文基于固态化学原理，以Bi系中2223高Tc相的稳定性为中心，通过对该复合氧化物的超导电性的系统研究，从整体上来认识铜酸盐化合物的超导电性的系统研究，从整体上来认识铜酸盐化合物的超导性能。前四章侧重于对Bi(Pb,Sb)系中的一些基本性质和特殊现象的研究，后面章节则主要是对晶体中Cu-O面内、面外元素替代效应的探讨。

掺W对Bi系中高Tc超导相的影响

自Maeda发现高Tc超导体BiSrCaCuO以来,引起了人们广泛兴趣;由于它有较高的超导转变温度(Tc>100K),无剧毒、价廉和自高温冷却到室温无结构相变等特点,Bi系是一很有实用前景的高Tc超导体;已经确定Bi系中含有三个超导相(2201,2212,2223相),但是迄今要制得较纯的2223高Tc相还有一定困难,无疑这对它的基础研究和实用开发都受到了限制,因此制备更纯的Bi系2223相具有重要的意义。

Bi系高温超导体中2212相和2223相的性质分析

本文对 Bi 系中可能存在一种 T_c>100K 的2212相作了进一步的论证.化学分析显示普通的2212相中 Cu~(3+)含量为～10%,而2223相和 T_c>100K 的2212相中 Cu~(3+)的含量却大于30%.从 DTA-TG 实验中观察到普通2212相和2223相失去晶格氧的量为0.8%,而含 T_c>100K 的2212相的样品失去晶格氧的量为～2%,说明这种2212相受氧含量影响更大.文中还介绍了一种简易判断样品中是否存在2223相和普通2212相的经验方法.

Comparative study on the doping effect of 3d elements in Bi(1.5)Pb(0.2)Sr(2)Ca(2)Cu(2.8)M(0.2)O(y) (M=Sc,Ti,V,Cr,Mn,Fe,Co,Ni, or Zn)

With XRD, R-T, and ac chi measurements a comparative study on the doping effects of 3d elements in Bi(1.5)Pb(0.2)Sr(2)Ca(2)Cu(2.8)M(0.2)O(y) (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, or Zn) has been carried out. The effects of the former five members are significantly different, both on phase formed and on T-c, from the latter four. It seems that the effect on phase stabilization correlates with the valency of the doped cation. In connection with the instability of the 2223 phase, the correlation has been discussed.

Bi系中2212相的超导电性研究

已知在Bi系高Tc超导体中存在三个超导相:2223相的Tc～110k,c～37(?);2212相的Tc～85k,c～30.6(?);2201相的Tc～10k。在实验过程中,我们注意到还可能有另外的超导相存在,通过改变元素名义配比和制备工艺观察到一个具有2212相结构,但Tc却表现为～105k的新现象存在。 实验部分 样品制备采用固相反应方法将Bi_2O_3、PbO、Sb_2O_3、SrCO_3、CaCO_3、CuO(均为A.R.级)混匀、碾磨,于～810℃在刚玉坩埚中预烧20h;再碾,压片后于～870℃在磁舟中烧结60-240h,然后作测试分析。

Bi-Sr-Ca-Cu-O体系中可能存在一个新的高T_c超导相

最近,Pb能加强BiSrCaCuO超导体中高T_c相(即2223相,其c(?)37,T_c(?)110K)的出现和掺入sb形成BiPbSbSrCaCuO的T_c可以达到132 K已见报道,我们希望通过其它元素的掺杂取代也出现类似的结果。我们做了大量掺Sb、Ba、In的实验,通过改变

Collapsed isoparametric element as a singular element for a crack normal to the bi-material interface

It is shown that the variable power singularity of the strain field at the crack tip can be obtained by the simple technique of collapsing quadrilateral isoparametric elements into triangular elements around the crack tip and adequately shifting the side-nodes adjacent to this crack tip. The collapsed isoparametric elements have the desired singularity at crack tip along any ray. The strain expressions for a single element have been derived and in addition to the desired power singularity, additional singularities are revealed. Numerical examples have shown that triangular elements formed by collapsing one side lead to excellent results.

A delay model for noise-induced bi-directional switching

Many biological systems can switch between two distinct states. Once switched, the system remains stable for a period of time and may switch back to its original state. A gene network with bistability is usually required for the switching and stochastic effect in the gene expression may induce such switching. A typical bistable system allows one-directional switching, in which the switch from the low state to the high state or from the high state to the low state occurs under different conditions. It is usually difficult to enable bi-directional switching such that the two switches can occur under the same condition. Here, we present a model consisting of standard positive feedback loops and an extra negative feedback loop with a time delay to study its capability to produce bi-directional switching induced by noise. We find that the time delay in the negative feedback is critical for robust bi-directional switching and the length of delay affects its switching frequency.

Bi-doped BaF2 crystal for broadband near-infrared light source

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America