Bi系中2212相的超导电性研究

已知在Bi系高Tc超导体中存在三个超导相:2223相的Tc～110k,c～37(?);2212相的Tc～85k,c～30.6(?);2201相的Tc～10k。在实验过程中,我们注意到还可能有另外的超导相存在,通过改变元素名义配比和制备工艺观察到一个具有2212相结构,但Tc却表现为～105k的新现象存在。 实验部分 样品制备采用固相反应方法将Bi_2O_3、PbO、Sb_2O_3、SrCO_3、CaCO_3、CuO(均为A.R.级)混匀、碾磨,于～810℃在刚玉坩埚中预烧20h;再碾,压片后于～870℃在磁舟中烧结60-240h,然后作测试分析。

Bi系高温超导体中2212相和2223相的性质分析

本文对 Bi 系中可能存在一种 T_c>100K 的2212相作了进一步的论证.化学分析显示普通的2212相中 Cu~(3+)含量为～10%,而2223相和 T_c>100K 的2212相中 Cu~(3+)的含量却大于30%.从 DTA-TG 实验中观察到普通2212相和2223相失去晶格氧的量为0.8%,而含 T_c>100K 的2212相的样品失去晶格氧的量为～2%,说明这种2212相受氧含量影响更大.文中还介绍了一种简易判断样品中是否存在2223相和普通2212相的经验方法.

Calculation of the thermal expansion coefficient for Bi2Sr2CaCu2O8

An estimation method of thermal expansion coefficient in term of lattice energy which was developed earlier for simple materials is extended to a complex material of Bi2Sr2CaCu2O8 (Bi-2212). The calculation of the chemical bond property and thermal expansion coefficient of Bi-2212 has been carried out and the theoretical values were in good agreement with the corresponding experimental results. The dependence of the thermal expansion coefficient on the different structures and on the flexible oxidation states of Bi and Cu are investigated. The results indicate that the thermal expansion coefficients of Bi-2212 are insensitive to the low lattice distortion of the average structure and the changes of formal valences of Bi and Cu ions.

SUPERCONDUCTIVITY OF 2212 PHASE IN BIBASED HIGH-TC SUPERCONDUCTORS

In the Bi-based high-T(c) superconductors, three superconducting transition points were observed above the liquid-N2 temperature range. Allotropes of the 2212 phase were found. These allotropes were metastable and can interchange with the 2212 phase, and their T(c)'s vary from approximately 85 to approximately 100 K.

掺W对Bi系中高Tc超导相的影响

自Maeda发现高Tc超导体BiSrCaCuO以来,引起了人们广泛兴趣;由于它有较高的超导转变温度(Tc>100K),无剧毒、价廉和自高温冷却到室温无结构相变等特点,Bi系是一很有实用前景的高Tc超导体;已经确定Bi系中含有三个超导相(2201,2212,2223相),但是迄今要制得较纯的2223高Tc相还有一定困难,无疑这对它的基础研究和实用开发都受到了限制,因此制备更纯的Bi系2223相具有重要的意义。

Collapsed isoparametric element as a singular element for a crack normal to the bi-material interface

It is shown that the variable power singularity of the strain field at the crack tip can be obtained by the simple technique of collapsing quadrilateral isoparametric elements into triangular elements around the crack tip and adequately shifting the side-nodes adjacent to this crack tip. The collapsed isoparametric elements have the desired singularity at crack tip along any ray. The strain expressions for a single element have been derived and in addition to the desired power singularity, additional singularities are revealed. Numerical examples have shown that triangular elements formed by collapsing one side lead to excellent results.

A delay model for noise-induced bi-directional switching

Many biological systems can switch between two distinct states. Once switched, the system remains stable for a period of time and may switch back to its original state. A gene network with bistability is usually required for the switching and stochastic effect in the gene expression may induce such switching. A typical bistable system allows one-directional switching, in which the switch from the low state to the high state or from the high state to the low state occurs under different conditions. It is usually difficult to enable bi-directional switching such that the two switches can occur under the same condition. Here, we present a model consisting of standard positive feedback loops and an extra negative feedback loop with a time delay to study its capability to produce bi-directional switching induced by noise. We find that the time delay in the negative feedback is critical for robust bi-directional switching and the length of delay affects its switching frequency.

Bi-doped BaF2 crystal for broadband near-infrared light source

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America