56 resultados para Bessand, Léon (1859-19..) -- Correspondance
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
Fishes of the genus Barbodes in Yunnan have been reviewed and 2 new species are described on the basis of specimens deposited in Kunming institute of Zoology, Chinese Academy of Sciences. Counts and measurements follow Chu and Chen (1989). Barbodes heterostomus is distinguished by its terminal mouth, with gape being horizontal in the male, and acclivitous in the female, last unbranched dorsal ray smooth with upper 1/3 articulated; dorsal fin origin anterior to pelvic fin origin; no dark lateral band on sides of body; gill rakers 13-19; lateral line scales 24-29; longest caudal ray length about 2 times that of shortest. It is distributed in Longchuanjiang and Dayingjiang (upper Irrawaddy). Barbodes baoshanensis is distinguished by its smooth last unbranched dorsal ray with upper 1/3-1/2 articulated; dorsal fin origin anterior to pelvic fin origin; sides of body with a dark longitudinal band; gill rakers 13-14; lateral line scales 23-28. It occurs in Nujiang (upper Salween) and Longchuanjiang. A key to the species of Barbodes in Yunnan is provided.
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植生克雷伯氏菌(Klebsiella planticola 19-1)是从新疆鄯善地区玉米根际分离得到的一株联合固氮菌。在40℃高温下有较强的乙炔还原活性。 本工作利用Southern Blot分子杂交技术, 以Klebsiella pneumoniae的nifA为探针,证明了在K.planticola 19-1中存在nifA-like基因,由nifH-lacZ实验推论其nifA-like基因产物对高温相对稳定。经过大质粒电泳和Southern Blot分子杂交,发现nifA-like基因定位于染色体外的大质粒上。本工作进一步克隆了含有K.plonticola 19-1的nifA-like基因的DNA片段,做了它的限制性酶切图谱,并将nifA-like基因初步定位。
Resumo:
http://www.jstage.jst.go.jp/
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Background: Polymorphisms of CLEC4M have been associated with predisposition for infection by the severe acute respiratory syndrome coronavirus (SARS-CoV). DC-SIGNR, a C-type lectin encoded by CLEC4M, is a receptor for the virus. A variable number tandem
Resumo:
A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.