Switch Region for Pathogenic Structural Change in Conformational Disease and Its Prediction

Many diseases are believed to be related to abnormal protein folding. In the first step of such pathogenic structural changes, misfolding occurs in regions important for the stability of the native structure. This destabilizes the normal protein conformation, while exposing the previously hidden aggregation-prone regions, leading to subsequent errors in the folding pathway. Sites involved in this first stage can be deemed switch regions of the protein, and can represent perfect binding targets for drugs to block the abnormal folding pathway and prevent pathogenic conformational changes. In this study, a prediction algorithm for the switch regions responsible for the start of pathogenic structural changes is introduced. With an accuracy of 94%, this algorithm can successfully find short segments covering sites significant in triggering conformational diseases (CDs) and is the first that can predict switch regions for various CDs. To illustrate its effectiveness in dealing with urgent public health problems, the reason of the increased pathogenicity of H5N1 influenza virus is analyzed; the mechanisms of the pandemic swine-origin 2009 A(H1N1) influenza virus in overcoming species barriers and in infecting large number of potential patients are also suggested. It is shown that the algorithm is a potential tool useful in the study of the pathology of CDs because: (1) it can identify the origin of pathogenic structural conversion with high sensitivity and specificity, and (2) it provides an ideal target for clinical treatment.

Electron tunneling through double magnetic barriers on the surface of a topological insulator

We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3254232]

GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 mu m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 mu m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 mu m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 mu m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm(2) with as-cleaved facet mirrors. (c) 2005 American Institute of Physics.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.

A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices. The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM). The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface. The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64 pf It is large enough for the detection of the induced surface potential. The irradiation mode of electron beam (e-beam) influences the signal generation. When the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. The polarity of induced potential depends on the structure of potential barriers and surface states of samples. The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.

Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 mu m photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (1). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size. (c) 2005 Elsevier B.V. All rights reserved.

Fusion dynamics of symmetric systems near barrier energies

Within the framework of the improved isospin-dependent quantum molecular dynamics (ImIQMD) model,he fusion dynamics of symmetric reaction systems are investigated systematically. Calculations show that the number of nucleon transfer in the neck region is appreciably dependent on the incident energies, but strongly on he reaction systems. A comparison of the neck dynamics is performed for the symmetric reactions 58Ni+58Niand 64Ni+64Ni at energies in the vicinity of the Coulomb barrier. An increase of the ratios of the neutron to proton in the neck region at initial collision stage is observed and obvious for the latter system, which reduces the fusion barrier of two colliding nuclei. The distribution of the dynamical fusion barriers and the fusion excitation functions are calculated and compared with the available experimental data.

黄土高原水土流失地区粮食生产潜力与发展主要途径

农业是国民经济的基础 ,粮食是基础的基础。黄土高原地区是中华民族文化的发祥地 ,也是我国历史上早期农牧业生产区和政治中心 ,粮食是该区人民赖以生存的最基本产业。探索其发展规律 ,分析其障碍因素 ,寻求其发展潜力 ,采取“一靠政策 ,二靠科技 ,三靠投入 ,四靠保护 ,五靠工作”的战略措施 ,对同类地区的粮食发展具有重要意义。

古潜山油藏非均质三维地质建模

The discovery of the highly productive Renqiu buried hill reservoir in Bohai Bay Basin in 1975 started the high tide of finding buried hill reservoirs in China and their research. As the advance of E&P technologies, the study of buried hill reservoir in China had a qualitative leap. The reservoir description and some other aspects of development have reached or approached to the international leading level. However, some core techniques for reservoir study such as structure & faulting system study, formation prediction and connection study and heterogeneous model's construction could not completely carry out the quantitative or accurate reservoir description, e. g. the areal distribution of porosity, permeability and oil saturation. Especially, the modeling for reservoir simulation is still wandering in the stage of simplicity. The inaccurate understanding of geology could not derive 3D heterogeneous geological model that can reveal the actual underground situation thus could not design practical and feasible oilfield development plan. Therefore, the problems of low oil recovery rate, low recovery factor and poor development effectiveness have not been solved. The poor connection of the reservoir determined that waterflooding could not get good development effect and the production had to depend on the reservoir elastic energy, and this will bring big difficulty for development modification and improvement of oil recovery. This study formed a series of techniques for heterogeneous model research that can be used to construct heterogeneous model consistent with the reservoir geology. Thus the development effectiveness, success ratio of drilling and percent of producing reserves can be enhanced. This study can make the development of buried hill reservoir be of high recovery rate and high effect. The achievements of this study are as follows: 1. Evaluated the resources, summarized the geological characteristics and carried out the reservoir classification of the buried hill reservoirs in Shengli petroliferous area; 2. Established the markers for stratigraphical correlation and formed the correlation method for complex buried hill reservoirs; 3. Analyzed the structural features of the buried hill reservoirs, finished the structure interpretation and study of faulting system using synthetic seismograms, horizontal slices and coherent analysis, and clarified structural development history of the buried hill reservoirs in Shengli petroliferous area; 4. Determined the 3 classes and 7 types of pore space and the main pore space type, the logging response characteristics and the FMI logging identified difference between artificial and natural fractures by the comprehensive usage of core analysis, other lab analyses, conventional logging, FMI logging and CMR logging; 5. Determined the factors controlled the growth of the fractures, vugs and cavities, proposed the main formation prediction method for buried hill reservoir and analyzed their technical principium and applicability, and formed the seismic method and process for buried hill reservoir description; 6. Established the reserve calculation method for buried hill reservoirs, i. e. the reserves of fractures and matrix are calculated separately; the recoverable reserves are calculated by decline method and are classified by the SPE criteria; 7. Studied restraining barriers and the sealing of the faults thus clarified the oil-bearing formations of the buried hill reservoirs, and verified the multiple reservoir forming theory; 8. Formed reasonable procedure of buried hill reservoir study; 9. Formed the 3 D modeling technology for buried hill reservoirs; 10. Studied a number of buried hill blocks on the aspects of reservoir description, reservoir engineering and development plan optimization based on the above research and the profit and social effect are remarkable.