Synchronization of modified Chua's circuit with x vertical bar x vertical bar function

This paper considers the chaos synchronization of the modified Chua's circuit with x vertical bar x vertical bar function. We firstly show that a couple of the modified Chua systems with different parameters and initial conditions can be synchronized using active control when the values of parameters both in drive system and response system are known aforehand. Furthermore, based on Lyapunov stability theory we propose an adaptive active control approach to make the states of two identical Chua systems with unknown constant parameters asymptotically synchronized. Moreover the designed controller is independent of those unknown parameters. Numerical simulations are given to validate the proposed synchronization approach.

A modified split hopkinson torsional bar in studying shear localization

A modified split Hopkinson torsional bar (SHTB) is introduced to eliminate the effect of the loading reverberation of the standard SHTB on the study of evolution of shear localization. The effect, the cause and the method by which to eliminate loading wave reverberation are carefully analysed and discussed. By means of the modified apparatus, the post-mortem observation of tested specimens can provide data on actual evolution of micro-structure and micro-damage during shear localization. Some test results of shear banding conducted with this apparatus support the use of the modified design. Moreover, the modification makes possible the correlation of evolving micro-structures to the transient shear stress-strain recording.

Elimination of loading reverberation in the split hopkinson torsional bar

The loading reverberation is a multiple wave effect on the specimen in the split Hopkinson torsional bar (SHTB). Its existence intensively destroys the microstructure pattern in the tested material and therefore, interferes with the study correlating the deformed microstructure to the macroscopic stress-strain response. This paper discusses the problem of the loading reverberation and its effects on the post-mortem observations in the SHTB experiment. The cause of the loading reverberation is illustrated by a stress wave analysis. The modification of the standard SHTB is introduced, which involves attaching two unloading bars at the two ends of the original main bar system and adopting a new loading head and a couple of specially designed clutches. The clutches are placed between the main bar system and the unloading bars in order to lead the secondary loading wave out of the main bar system and to cut off the connection in a timely manner. The loading head of the standard torsional bar was redesigned by using a tube-type loading device associated with a ratchet system to ensure the exclusion of the reflected wave. Thus, the secondary loading waves were wholly trapped in the two unloading bars. The wave recording results and the contrasting experiments for examining the post-mortem microstructure during shear banding both before and after the modification highly support the effectiveness of the modified version. The modified SHTB realizes a single wave pulse loading process and will become a useful tool for investigating the relation between the deformed microstructure and the macroscopic stress-strain response. It will play an important role especially in the study of the evolution of the microstructure during the shear banding process. (C) 1995 American Institute of Physics.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.

Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode

A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire

We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level.

Interfacial behaviour of quantum well electrode/electrolyte: effect of redox species on EER spectra of a single quantum well GaAs vertical bar AlxGa1-xAs electrode

The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of applied reverse bias in ferrocene, p-methyl nitrobenzene and hydroquinone+benzoquinone non-aqueous solutions. EER spectra were compared for different redox species and showed that a pronounced quantum-confined Stark effect and a Franz-Keldysh oscillation for a single quantum well electrode were obtained in the p-methyl-nitrobenzene- and hydroquinone+benzoquinone-containing solutions. A surface interaction of the single quantum well electrode with ferrocene led to fewer changes in the electric field of the space charge layer for reverse bias; this was suggested to explain the weak quantum-confined Stark effect and Franz-Keldysh oscillation effect observed for the single quantum well electrode in the ferrocene-containing solution. (C) 1997 Elsevier Science S.A.