Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer

We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.

基于高频微波技术的分布式光纤传感器布里渊散射信号检测

分析了布里渊分布式光纤传感技术原理,采用自行研制的光纤单纵模分布反馈(DFB)激光器结合电光调制技术,利用相干检测技术,对布里渊微弱后向散射信号进行检测。通过改进滤波放大技术,对微弱后向散射光信号进行有效放大,再用扰偏技术及信号采样平均处理,实现对光纤传感器后向布里渊散射信号在11 GHz高频段直接采集显示。结果表明,探测所得布里渊散射信号峰值功率可达50 mV,能有效降低解调系统信号检测难度,改善了系统信噪比(SNR)。初步实验结果证明了该方案的可行性。

Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). AlInGaN quaternary alloys with different compositions were acquired by changing the Al cell's temperature. The streaky RHEED patterns were observed during AlInGaN quaternary alloys growth. Scanning Electron Microscope (SEM), Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN quaternary alloys grow on the GaN buffer in the layer-by-layer growth mode. When the Al cell's temperature is 920 degrees C, the Al/In ratio in the AlInGaN quaternary alloys is about 4.7, and the AlInGaN can acquire better crystal and optical quality. The X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectively.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

RBS/channeling study and photoluminscence properties of Er-implanted GaN

The Raman back scattering/channeling technique was used to analyze the damage recovery at different annealing temperatures and to determine the lattice location of the Er-implanted GaN samples. A better damage recovery was observed with increasing annealing temperature below 1000degreesC, but a complete recovery of the implantation damage cannot be achieved. For a sample annealed for at 900degreesC 30 min the Er and Ga angular scans across the <0001> axis was measured indicating that about 76% of Er ions occupies substitutional sites. Moreover, the photoluminscence (PL) properties of Er-implanted GaN thin films have been also studied. The experimental results indicate that those samples annealed at a higher temperature below 1000degreesC had a stronger 1539nm PL intensity. The thermal quenching of PL intensity for samples annealed at 900degreesC measured at temperatures from 15K to 300K is 30%.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.

Lg尾波衰减成像研究——北京及邻区衰减成像

With the development of the technology of earthquake observation, more and more researchers work at many fields' of seismicity using seismic kinetic property, as the result, the study of attenuation has also made great progress, especially in the mechanism of the attenuation and the physical process. Aki put forward single back scattering theory to explain the forming of the seismic coda wave in 1969. Then, researchers started to develop the study in seismic scattering and attenuation. My thesis is also based on that theory. We assume that the Lg wave is a superposition fo high-mode surface waves, the coda of Lg is caused by scattering. Sato proposed Single Isotropic Scattering model (SIS model) to interpreted the scatter property, and he also formulated the geometrical spreading term. Then Xie (1988) developed the single spectral-ratio (SSR) method to obtain the Lg coda Q and the frequency dependent factor n. Later, he get to lateral images in the area of scatter ellipse. SSR method is explored and used in the study of Lg coda waves of regional earthquakes in my thesis. Choosing the earthquakes records with high ratio of signal-noise ,which were recorded at the stations from 1989 to 1999, we obtain the single trace Lg coda Q and its frequency dependent factor n. The results proved that SIS model is the reasonable model to explain the Lg coda wave, and SSR method also can be used to process Lg coda of regional earthquakes to get to the satisfied Lg coda Q. Based on the Lg coda Q we obtained using the former method, we explore the programs to inverse the regional Lg coda Q independently, and then make use of them to inverse the Lg coda Q of Beijing and adjacent area. The inversion result is satisfied. We conclude that the distribution of Qo (Q in lHz) is marked by the inhomogeneity, which is related to the tectonic structure: The value of Qo in uplift area, for example, Yanshan uplift, Taihang uplift, Luxi Uplift, is higher than the depression area, for example, Jizhong depression, Huanghua depression, and Jiyang depression, and the border between the higher Q area and lower Q area is very clear; Lg coda Q is also related to the velocity structure, higher velocity area is also with higher Q, lower velocity area is with lower Q; and higher heat-flow area is companied with lower Q. All in all, the value of Q reflects the difference of characteristics of lithofaces, porosity, the liquid content between the pores and heat flow. So, the Q value difference between uplift area and depression area reveals the difference of tectonic structure, lithology and physical character of the rock. So, the study of Lg coda Q is help to understand the earthquakes propagation mechanism through the inhomogenous medium, the cause of the coda, attenuation mechanism of the coda. Making use of the lateral images of Q, with velocity images, heat flow results, and other experimental result, we will be promoted to understand the complex structure of the crust, its inhomogenous character, and so on.

Measurements of light scattering from glass substrates by total integrated scattering

A total integrated scattering (TIS) measurement was performed to investigate the surface and volume scattering of K9 glass substrates with low reflectance. Ag layers with thicknesses of 60 nm were deposited on the front and back surfaces of the K9 glass substrates by the magnetron sputtering technique. Surface scattering of the K9 glass substrate was obtained by the TIS measurement of the Ag layers on the assumption that the Ag layers and the K9 substrate had the same surface profile. Volume scattering of the substrates was deduced by subtracting the front and back surface scattering from the total scattering of the substrates. (c) 2005 Optical Society of America.

Raman scattering studies of III-V semiconductors grown on [n11]-oriented substrates

The room temperature Raman spectra of the Ga(0.5)Al(0.5)AS and the In0.52Al0.48As epilayer grown on [n11]-oriented substrates were measured in various back scatterng geometries, The relative intensity of TO modes and LO modes in those samples shows a regular Variation with differently oriented substrates in the experiments. By comparing experimental data with Raman scattering selection rules for the zincblende structure epilayer grown on [n11]-oriented substrates, it was found that the present calculations are in good agreement with the experimental results.

The scattering of general SH plane wave by interface crack between two dissimilar viscoelastic bodies

The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.

Evaluation of influence of multiple scattering effect in light-scattering-based applications

The extinction cross sections of a system containing two particles are calculated by the T-matrix method, and the results are compared with those of two single particles with single-scattering approximation. The necessity of the correction of the refractive indices of water and polystyrene for different incident wavelengths is particularly addressed in the calculation. By this means, the volume fractions allowed for certain accuracy requirements of single-scattering approximation in the light scattering experiment can be evaluated. The volume fractions calculated with corrected refractive indices are compared with those obtained with fixed refractive indices which have been rather commonly used, showing that fixed refractive indices may cause significant error in evaluating multiple scattering effect. The results also give a simple criterion for selecting the incident wavelength and particle size to avoid the 'blind zone' in the turbidity measurement, where the turbidity change is insensitive to aggregation of two particles.

Small angle X-ray scattering of the colloidal crystal

The monodisperse polystyrene spheres are assembled into the colloidal crystal on the glass substrate by vertical deposition method, which is aimed at the so-called photonic crystal applications. The structural information of the bulk colloidal crystal is crucial for understanding the crystal growth mechanism and developing the various applications of colloidal crystal. Small-angle X-ray scattering (SAXS) technique was used to obtain the bulk structure of the colloidal crystal at Beamline 1W2A of BSRF. It is found that the SAXS pattern is sensitive to the relative orientation between the colloidal sample and the incident X-ray direction. The crystal lattice was well distinguished and determined by the SAXS data.

The calculation of photoelectron angular distributions with jet-like structure from scattering theory

Photoelectron angular distributions produced in above-threshold ionization (ATI) are analysed using a nonperturbative scattering theory. The numerical results are in good qualitative agreement with recent measurements. Our study shows that the origin of the jet-like structure arises from the inherent properties of the ATI process and not from the angular momentum of either the initial or the excited states of the atom.

Photon-photon scattering in a plasma channel

The Heisenberg-Euler correction due to photon-photon scattering, a still unverified quantum electrodynamics effect, on electromagnetic wave interaction inside a plasma channel is investigated theoretically. From a signal laser beam in the relativistic overdense plasma channel, photon-photon scattering can produce a detectable output beam of different frequency and polarization. (C) 2003 American Institute of Physics.