High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions

High-speed and high-power InGaAsP/lnP selective proton-bombarded buried crescent (SPB-BC) lasers with optical field attenuation regions were reported. The defect of proton bombardment can not affect the lifetime of the SPB-BC laser because the optical field attenuation region obstructs the growth and propagation of defects. A CW light output over 115 mW was achieved at room temperature using a 500 mu m long cavity SPB-BC laser. The 3 dB bandwidth was 8.5 GHz, and the lifetime was about 8.5 x 10(5) h. The capacitance of four kinds of current blocking structures was first measured in our experiment, and the results shown that the capacitance of proton-bombarded pnpn structure was not only less than that of pnpn current blocking structure, but also less than that of semi-insulating Fe-InP structure.

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

两层流体热毛细对流空间实验研究=Space Experiments of Thermo Capillary Convection in Two-liquid Layers

1999年,在我国实践5号卫星上完成了两层流体空间实验,实验研究两层不相混合流体的纯Marangoni对流（温度梯度与界面垂直）与热毛细对流（温度梯度方向与流体界面平行）.前者存在发生Marangoni对流的最小临界温差值△Tc,低于该值流体系统处于静止状态;后者中只要存在沿界面的温度梯度便会产生热毛细对流.空间实验采用石蜡和氟化液两层流体新体系,实现了平整的液-液交界面,并从卫星上传回上万幅数字图像.通过多幅图像叠加处理得到了定量的流速场.数值模拟计算分析了相应工况时对流流动的速度场,两者的流场结构和速度大小基本一致,实验验证了理论模型.

Dislocation dynamics of strain relaxation in epitaxial layers

Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations

Structural and Mechanical Properties of the Organic Matrix Layers of Nacre

The type of nanostructure referred to in biomineralization as a mineral bridge has been directly observed and measured in the organic matrix layers of nacre by transmission electron microscopy and scanning electron microscopy. Statistical analysis provides the geometric characteristics and a distribution law of the mineral bridges in the organic matrix layers. Experiments reveal that the nanostructures significantly influences the mechanical properties of the organic matrix layers. In addition, the mechanical analysis illustrates the effects of the nanostructures on the behaviors of the organic matrix layers, and the analytical results explain the corresponding experimental phenomena fairly well. The present study shows that the mineral bridges play a key role in the mechanical performances of the organic matrix layers of nacre. The results obtained provide a guide to the interfacial design of synthetic materials.

Influence of the Processing Conditions on the Characteristics of the Clad Layers Produced with Laminar Plasma Technology

Laminar plasma technology was used to produce ceramic hardened layers of Al2O3-40% mass Ni composite powders on stainless steel substrates. In order to investigate the influences of processing conditions on the morphologies of the surface modified layers, two different powder-feeding methods were tested, one with carrier gas called the powder injection method, and the other without carrier gas called powder transfers method. The microscopic investigations demonstrate that the cross-section of the clad layers consists of two distinct microstructural regions, in which the Al2O3 phases exhibit different growth mechanisms. When the powder transfers method is adopted, the number density and volume fraction of the Al2O3 particles increase considerably and their distributions exhibit zonal periodical characteristics. When the powder-feeding rate increases, the microstructure of the Al2O3 phases changes from a small globular to a long needle shape. Finite element simulations show that the transient thermo-physical features of the pool substances, such as solidification rate and cooling rate, influence strongly the mechanisms of the nucleation and the directional growth of the Al2O3 phases in the thermal processing.

Microstructure and characteristics in the organic matrix layers of nacre

The direct observation of a type of microstructure in the organic matrix layers of nacre was obtained with a transmission electron microscope. The microstructure, which is referred to as mineral bridge in the biomineralization, is nanoscale and randomly distributed in the layers. Statistical analysis gives the distribution laws and characteristics of mineral bridges in the organic matrix layers. The existence of mineral bridges in nacre was confirmed, and it was shown that the microarchitecture of nacre should be described as a "brick-bridge-mortar" arrangement rather than traditional "brick and mortar" one.

可压剪切层线性稳定性特征直接数值模拟=Direct Simulation of the Linear Instabilities in Compressible Shear Layers

基于伪随机数生成技术促生白噪声扰动,以高精度迎风/对称紧致混合差分算法求解二维/三维非定常可压Navier-Stokes方程,揭示了可压自由剪切层初始剪切过程中扰动的线性演化特征,以及该过程对扰动波数和方向的内在选择性.验证了所用算法的有效性,表明线性理论同数值模拟相结合是可压剪切层研究的合理途径之一.

Behaviour analysis of numerical solutions and simulation of coherent structures in compressible mixing layers

For understanding the correctness of simulations the behaviour of numerical solutions is analysed, Tn order to improve the accuracy of solutions three methods are presented. The method with GVC (group velocity control) is used to simulate coherent structures in compressible mixing layers. The effect of initial conditions for the mixing layer with convective Mach number 0.8 on coherent structures is discussed. For the given initial conditions two types of coherent structures in the mixing layer are obtained.

Space experiments of thermocapillary convection in two-liquid layers

In 1999, the space experiments on the Marangoni convection and thermocapillary convection in a system of two immiscible liquid layers in microgravity environment were conducted on board the Chinese scientific satellite SJ-5. A new system of two-layer liquids such as FC-70 liquid and paraffin was used successfully, with the paraffin melted in the space. Two different test-cells are subjected to a temperature gradient perpendicular or parallel to the interface to study the Marangoni convection and thermocapillary convection, respectively. The experimental data obtained in the first Chinese space experiment of fluid are presented. Two-dimensional numerical simulations of thermocapillary convections are carried out using SIMPLEC method A reasonable agreement between the experimental investigation and the numerical results is obtained.

Numerical simulation of coherent structure in two-dimensional compressible mixing layers

The coherent structure in two-dimensional mixing layers is simulated numerically with the compressible Navier-Stokes equations. The Navier-Stokes equations are discretized with high-order accurate upwind compact schemes. The process of development of flow structure is presented: loss of stability, development of Kelvin-Helmholtz instability, rolling up and pairing. The time and space development of the plane mixing layer and influence of the compressibility are investigated.

Statistics of Turbulence in Benthal Boundary Layers

This paper deals with turbulence behavior inbenthalboundarylayers by means of large eddy simulation (LES). The flow is modeled by moving an infinite plate in an otherwise quiescent water with an oscillatory and a steady velocity components. The oscillatory one aims to simulate wave effect on the flow. A number of large-scale turbulence databases have been established, based on which we have obtained turbulencestatisticsof the boundarylayers, such as Reynolds stress, turbulence intensity, skewness and flatness ofturbulence, and temporal and spatial scales of turbulent bursts, etc. Particular attention is paid to the dependences of those statistics on two nondimensional parameters, namely the Reynolds number and the current-wave velocity ratio defined as the steady current velocity over the oscillatory velocity amplitude. It is found that the Reynolds stress and turbulence intensity profile differently from phase to phase, and exhibit two types of distributions in an oscillatory cycle. One is monotonic occurring during the time when current and wave-induced components are in the same direction, and the other inflectional occurring during the time when current and wave-induced components are in opposite directions. Current component makes an asymmetrical time series of Reynolds stress, as well as turbulence intensity, although the mean velocity series is symmetrical as a sine/cosine function. The skewness and flatness variations suggest that the turbulence distribution is not a normal function but approaches to a normal one with the increasing of Reynolds number and the current-wave velocity ratio as well. As for turbulent bursting, the dimensionless period and the mean area of all bursts per unit bed area tend to increase with Reynolds number and current-wave velocity ratio, rather than being constant as in steady channel flows.

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at similar to 3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.